Freescale Semiconductor Technical Data Document Number: MC33198 Rev. 2.0, 11/2006 Automotive High-Side TMOS Driver 33198 The MC33198 is a high-side TMOS driver, dedicated to automotive applications. It is used in conjunction with an external power MOSFET for high-side drive applications. The device can drive and protect a large variety of MOSFETs. The device has a CMOS compatible input control, charge pump to drive the MOSFET gate, and fault detection circuitry based on programmable VDS monitoring to detect shorted loads. It also includes a programmable timer function to eliminate undesired switch off due to in rush currents, and a status pin which reports the output status of both on and off MOSFET states. The device uses few external components and offers an economical solution to large current high side switches. It also has PWM capability up to 1kHz. HIGH-SIDE TMOS DRIVER D SUFFIX EF SUFFIX (PB-FREE) 98ASB42564B 8-PIN SOICN Features • Designed for Automotive High Side Driver Application • Works with a Wide Variety of N-Channel Power MOSFETs ORDERING INFORMATION • PWM Capability • On Board Charge Pump Capable of Charging 25nF in less than 1ms Temperature Device Package with No External Components Required Range (TA) • Drive Inductive Load with No External Clamp Circuitry Required MC33198D • CMOS Logic Compatible Input Control -40°C to 125°C 8 SOICN MCZ33198EF/R2 • TMOS Over Current and Short Circuit Protection • Fault Output to Report an MOSFET Overcurrent Condition • Output Status Available when MOSFET is On or Off • Extended Temperature Range from -40°C to 125°C • Protected Against Automotive Transients with few External Components • Overvoltage and Undervoltage Shutdown • Pb-Free Packaging Designated by Suffix Code EF VBAT 33198 VCC DRN INPUT MCU GATE 5.0V SRC STATUS LOAD TIMER GND Figure 1. 33198 Simplified Application Diagram Freescale Semiconductor, Inc. reserves the right to change the detail specifications, as may be required, to permit improvements in the design of its products. © Freescale Semiconductor, Inc., 2007. All rights reserved. INTERNAL BLOCK DIAGRAM INTERNAL BLOCK DIAGRAM VBAT 5 VCC DRN Rdrn 2 Over Volt Detect Bias Supply Ref 80 µA 4 10µA Power ON 15V 7 - + C1 5V SRC C2 LOGIC - MCU POWER TMOS GATE 100 µA Under Volt Detect INPUT Charge Pump Vcc + Rsrc 1 Rpu 10µA 6 + STATUS C3 - 3 LOAD 8 GND TIMER C timer Figure 2. 33198 Simplified Internal Block Diagram and Typical Application 33198 2 Analog Integrated Circuit Device Data Freescale Semiconductor PIN CONNECTIONS PIN CONNECTIONS SRC 1 8 TIMER DRN 2 7 INPUT GND 3 6 STATUS GATE 4 5 VCC Figure 3. 33198 Pin Connections Table 1. 33198 Pin Definitions Pin Number Pin Name Formal Name Definition 1 SRC Source 2 DRN Drain 3 GND Ground 4 GATE Gate Output to control the gate of external MOSFET 5 VCC VCC Power for the device 6 STATUS Status 7 INPUT Input Control input 8 TIMER Timer Inrush Current detection delay timer input Input to detect MOSFET/load status Input to set overvoltage threshold Ground for the device Output signal for MOSFET status 33198 Analog Integrated Circuit Device Data Freescale Semiconductor 3 ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS Table 2. Maximum Ratings All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device. Ratings Symbol Value Unit Power Supply Voltage VCC - 0,6 to 60 V TMOS Source Voltage VSRC - 0,6 to 60 V Comparator Threshold VDRN - 0,6 to 60 V Gate Output Voltage VGATE - 0,6 to 25 V VIN - 0,6 to 25 V VST - 0,6 to 10 V VESD +/-2000 V TSTG -55 to +150 °C TJ -40 to +150 °C RJ 145 °C TPPRT Note 3 °C ELECTRICAL RATINGS Input Voltage Status ESD Voltage Capability (1) THERMAL RATINGS Storage Temperature Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance J/A Peak Package Reflow Temperature During Reflow (2), (3) Notes 1. ESD testing is performed in accordance with the Human Body Model (HBM) (CZAP = 100 pF, RZAP = 1500 Ω), the Machine Model (MM) (CZAP = 200 pF, RZAP = 0 Ω), and the Charge Device Model (CDM), Robotic (CZAP = 4.0pF). 2. 3. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow Temperature and Moisture Sensitivity Levels (MSL), Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e. MC33xxxD enter 33xxx), and review parametrics. 33198 4 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 20 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit ILSRC -10 - 10 µA Threshold Current ITHR 54 81 102 µA DRN Leakage, Input Off, VCC Pin Open ILEAK - - 10 µA VON Vcc + 7.0 Vcc+15 V with NO Over VDS condition and VOUT >0.5V IOUTN 70 110 150 µA with Over VDS condition and VOUT >0.5V IOUTW 5.0 10 15 µA 0.0 - 0.9 - 5.0 - µA - ms SRC PIN 1 Leakage Current DRN PIN 2 GATE PIN 4 Output On Voltage at 1ms (Charge Pump ON) Turn Off Current Output Off Voltage. VOFF (Charge Pump OFF and VCC Pin Open) Gate Discharge Current. (VCC Pin Open) IOFF Turn On Time TON V Cl = 25nF ; 7.0V < VCC < 10V ; VOUT > VCC+7.0 - - 1.0 Cl = 25nF ; 10V < VCC < 20V ; VOUT > VCC+10 - - 1.0 7.0 - 20 at VCC = 7.0V - 1.8 4.0 at VCC = 20V - 2.8 6.0 VCC PIN 5 Supply Voltage Range VCC Quiescent Supply Current ; In = 0V ICCQ V mA Supply Current ; In = 5.0V ICC 1.0 - 35 mA Over Voltage Threshold VOV 22 28 34 V Under Voltage Threshold VUR - 6.0 7.0 V VOL 0.1 0.4 1.5 V Input Low Voltage VIL - - 1.5 V Input High Voltage VIH 3.5 - - V VHYS 0.8 - - V Input Pull Down Resistor. VIN >11V RIN 20 36 100 kΩ Open Input Voltage VIOP - - 1.0 V STATUS PIN 6 Output Voltage @ I = 1mA INPUT Pin 7 Input Hysteresis 33198 Analog Integrated Circuit Device Data Freescale Semiconductor 5 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 20 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit Timer Current ITIME 7.0 10 14 µA On Threshold VHTH 5.2 5.5 5.8 V Discharge Current @ VPIN8 = 5.0V IDISCH 2.0 5.0 10 mA Saturation Voltage @ IPIN8 = 1mA VSAT - 0.15 0.4 V TIMER PIN 8 33198 6 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS Table 4. Dynamic Electrical Characteristics Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Parameter Vcc = 7.0V Vcc = 14V Vcc = 21V Unit TYPICAL RISE TIME (TR) VERSUS GATE EXTERNAL CAPACITOR LOAD AND SUPPLY VOLTAGE (REFER TO Figure 4) C = 1.0nF 15 7.0 10 µs C = 3.0nF 60 25 40 µs C = 10nF 140 80 90 µs C = 30nF 730 270 340 µs TYPICAL FALL TIME (TF) VERSUS GATE EXTERNAL CAPACITOR LOAD AND SUPPLY VOLTAGE (REFER TO Figure 4) C = 1.0nF 150 230 280 µs C = 3.0nF 430 800 950 µs C = 10nF 1200 2300 2750 µs C = 30nF 4800 8000 9200 µs TIMING DIAGRAMS INPUT Pin 7 5V Vcc 5 VCC 1 2 SRC DRN 6 STATUS 0V GATE 4 GATE Pin 4 Typically (V C 7 INPUT TIMER GND 8 3 CC + 15V) 90% 10% t R t F Figure 4. Timing Measurements Test Schematic 33198 Analog Integrated Circuit Device Data Freescale Semiconductor 7 ELECTRICAL CHARACTERISTICS TIMING DIAGRAMS < 30V and > 20V UNDER VOLTAGE THRESHOLD Vbat UNDER VOLTAGE THRESHOLD VCC PIN 5 (V) 0V 5V IN PIN 7 (V) 0V 110µA GATE DISCHARGE CURRENT 10µA GATE DISCHARGE CURRENT 10µA DISCHARGE Vbat + 14V MOSFET GATE (V) 0V < Vbat PIN 2 VOLTAGE LOAD VOLTAGE (V) MOSFET SOURCE (V) 0V 10V 5,5V TIMER PIN 8 (V) 0V FAULT PIN 6 (V) 5V 0V NORMAL SWITCH ON/OFF TEMPORY OVERLOAD PERMANENT OVERLOAD MOSFET OFF LOAD SHORTED TO VBAT OVERVOLTAGE CONDITION UNDERVOLTAGE CONDITION Figure 5. Descriptive Waveform Diagram 33198 8 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS ELECTRICAL PERFORMANCE CURVES ELECTRICAL PERFORMANCE CURVES SUPPLY CURRENT (mA) 5 Ta = -40 °C 4 Ta = 125 °C 3 2 Ta = 25 °C 1 DRAIN CURRENT (uA) g 80 Ta = 25 °C 78 Ta = - 40 °C 76 74 Ta = 125 °C 72 0 5 10 15 20 5 25 10 15 20 25 Vcc, SUPPLY VOLTAGE (V) Vcc, SUPPLY VOLTAGE (V) Figure 6. Supply Current versus Supply Voltage. Pin 7 = 0V Figure 9. Drain Current versus Supply Voltage FAULT OUTPUT VOLTAGE (V) SUPPLY CURRENT (mA) 2 25 20 15 10 5 Ta = 125 °C 1.5 1 Ta = 25 °C 0.5 0 0 5 10 15 20 Vcc, SUPPLY VOLTAGE (V) 25 Ta = -40 °C 1 2 3 4 FAULT OUTPUT CURRENT (mA) 5 Figure 10. Fault Output Voltage versus Current Figure 7. Supply Current versus Supply Voltage. Pin 7 = 5.0V 40 TIMER CURRENT (uA) Ta = -40 °C 10 Ta = 25 °C 9 Ta = 125 °C Vg, GATE VOLTAGE (V) 25°C 11 35 125°C -40°C 30 25 20 8 15 5 5 10 15 20 Vcc, SUPPLY VOLTAGE (V) 25 20 10 15 Vcc, SUPPLY VOLTAGE (V) 25 Figure 11. Gate Voltage versus Voltage Figure 8. Time Current versus Supply Voltage 33198 Analog Integrated Circuit Device Data Freescale Semiconductor 9 ELECTRICAL CHARACTERISTICS ELECTRICAL PERFORMANCE CURVES 40 40 VCC = 21V VCC = 21V 35 GATE VOLTAGE (V) GATE VOLTAGE (V) 35 30 25 VCC = 14V 20 15 10 VCC = 7V 30 25 VCC = 14V 20 15 10 VCC = 7V 5 5 0 1 2 3 GATE OUTPUT CURRENT (mA) 4 Figure 12. Gate Voltage versus Gate Output Current. TA = 25°C. 0 1 2 3 GATE OUTPUT CURRENT (mA) 4 Figure 14. Gate Voltage versus Gate Output Current. TA = 40°C 35 40 VCC = 21V 30 30 GATE VOLTAGE(V) GATE VOLTAGE (V) 35 VCC = 14V 25 20 VCC = 7V 15 10 25 20 15 No Rg Rg = 68K Rg = 39K Rg = 15K 10 5 5 0 1 2 3 GATE OUTPUT CURRENT (mA) 4 Figure 13. Gate Voltage versus Gate Output Current. TA = 125°C 0 5 7 15 9 11 13 17 Vcc , SUPPLY VOLTAGE (V) 19 21 Figure 15. Gate Voltage versus VCC and RG at TA = 25°C 33198 10 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DESCRIPTION INTRODUCTION FUNCTIONAL DESCRIPTION INTRODUCTION The MC33198 is a high side TMOS driver, dedicated to automotive applications. It is used in conjunction with an external power MOSFET for high side drive applications. The device can drive and protect a large variety of MOSFETs. The device has a CMOS compatible input control, charge pump to drive the MOSFET gate, and fault detection circuitry based on programmable VDS monitoring to detect shorted loads. It also includes a programmable timer function to eliminate undesired switch off due to in rush currents, and a status pin which reports the output status of both on and off MOSFET states. The device uses few external components, and offers an economical solution to large current high side switches. It also has PWM capability up to 1kHz. maintains the gate of the MOSFET below 0.9V when the device has no supply, ensuring that the MOSFET remains off. This passive pulldown current is operating even if device VCC (pin 5) is not powered up. POWER SUPPLY The device has a status output (pin 6) which has an open collector structure. This pin is used to report the MOSFET overload condition or the LOAD status when the MOSFET is off. The device Pin 1 (Source) is compared to a programmable threshold at Pin 2, in both the on and off state of the MOSFET. This allows the detection of the MOSFET over VDS or over load conditions when the MOSFET is on and the load short to VBAT monitoring, when the MOSFET is in the off state. This status pin is normally connected to a pullup resistor and a micro input, and can drive up to 1.0mA. The MC33198 can be supplied from the battery line. It is designed with a 60V technology, making it able to sustain up to 60V transient pulses. In the off state, with pin 7 low, the supply current can be up to 5.0mA, and in operation, pin 7 high, the current up to 25mA. The device has an undervoltage detection and shutdown near 7.0V. Below this value the MOSFET is turned off. There is also a 25V overvoltage detection which switches off the output pin 4 to protect both the MOSFET and the load when VCC is higher than 25V. CHARGE PUMP The device incorporates a self running charge pump with an internal capacitor and is connected at Gate pin 4. To prevent oscillation, a serial resistor can be added. The charge pump is able to charge a 25nF capacitor in less than 1ms. This allows the MC33198 to have a rapid response time and to drive the external TMOS gate very quickly, allowing fast switching on of the load. The device has an internal 15V zener diode between pin 4 and 1, to clamp the Gate-toSource voltage and protect the MOSFET gate oxide from destruction. See Dynamic Electrical Characteristics on page 7 for details. BAND GAP AND REFERENCE CURRENTS The MC33198 has an internal band gap reference voltage which generates all the internal thresholds. This band gap is also used to generate internal reference currents necessary for proper operation of the device. These currents are : Pin 2 : Drain current (typically 80mA). Pin 4 : High and low gate discharge currents (typically 100mA and 10mA). Pin 8 : Timer charge current (10mA typical). All these currents are derived from the same reference voltage and internal resistor. Their accuracy and variability is approximately +-25% over the full temperature and voltage range. In addition, a passive pull down current of 5.0mA INPUT CIRCUITRY The Input pin (pin 7) of the device is CMOS compatible and can be directly connected to a microcontroller. The input current is determined by an internal pull down resistor, typically 36kW. A hysteresis of 0.8 V minimum is present at this input. OUTPUT STATUS TIMER The Timer pin (pin 8) is used in conjunction with an external capacitor to create a delay between the overload detection and the shutdown of the MOSFET. In case of over load, the internal current source pin 8 will charge the capacitor. When the voltage at pin 8 reaches the 5.5V threshold, the internal C3 comparator will be triggered and switch off the output to protect the MOSFET. The fault and the MOSFET turn off condition are latched and are reset by switching the input off and on. The delay between the overload detection and actual MOSFET turn off is used to allow a temporary overload which will prevent the system from switching off during possible inrush currents or transients. MOSFET PROTECTION AND OUTPUT VOLTAGE MONITORING The MC33198 has the ability to sense the output MOSFET source voltage and compare it to a predetermined threshold. This threshold is programmable, using the internal reference current of 80mA and an external resistor connected at pin 2 (DRN). The device can monitor the output load voltage, as well as protect the MOSFET in case of overload. The overload detection threshold must be adapted to the MOSFET itself depending on the load to be driven and the thermal capability of the MOSFET. In practice, the maximum acceptable VDS of the MOSFET should be determined and based upon the MOSFET maximum power dissipation. 33198 Analog Integrated Circuit Device Data Freescale Semiconductor 11 FUNCTIONAL DESCRIPTION INTRODUCTION In addition, the pin 8 capacitor value should be calculated to allow inrush current. SOURCE (PIN1) AND DRAIN (PIN2) FUNCTIONALITY These two pins are used to sense the MOSFET and load conditions. Pin 2 is connected to the internal pull down current source of 80mA and to the C2 comparator. An external resistor connected between pin 2 and VBAT creates a voltage drop across this resistor. The voltage drop will be the MOSFET maximum acceptable drain to source voltage and the C2 comparator threshold. Pin 1 is connected to the MOSFET source pin. Two different cases should be considered, MOSFET on or off : When the MOSFET is on and working under normal conditions, the VDS should be less than the voltage developed at pin 2. So, the C2 comparator output is low and the status is high. No current will flow through the pin 8 capacitor. If the MOSFET encounters an overload or if the load is shorted to Gnd, the voltage at the source will cross the pin 2 voltage and go below this pin 2 voltage, thereby turning on the C2 comparator. The comparator will pull the status pin 6 low and will enable the charge of the pin 8 capacitor. When the voltage at the capacitor reaches 5.5V, the C3 comparator will switch off the MOSFET by disabling the charge pump and the 110mA current source. The MOSFET gate will be discharged only by the 10mA current source. The MOSFET is latched off and can be turned back on again by switching the input pin 7 to 0 and back to 1. When the MOSFET is off, we have the same scheme. Under normal conditions, the load should pull the source voltage to Gnd, thus C2 comparator output is high and status pin pulled low. If the load is shorted to VBAT for instance, source pin will be higher than pin 2, The C2 output comparator is low and the status pin is high. This is summarized in Table 5, Status Functionality. Table 5. Status Functionality INPUT PIN 7 LOAD C2 STATUS CONDITION SOURCE OUTPUT PIN 6 VOLTAGE COMP TIMER PIN 8 Low Normal <VPIN2 High Low Low Low Short Circuit to VBAT >VPIN2 Low High Charge by 10 µA source High Normal >VPIN2 Low High Low High Short to GND or Overload <VPIN2 High Low Charge by 10 µA source OPERATION WITH INDUCTIVE LOADS The device can drive the MOSFET during inductive loads switching applications. In this case, a 1.0kW resistor should be connected between source of the MOSFET and device pin 1. The resistor will limit the current flowing into pin 1 and prevent MC33198 from damage while switching the inductive load off. The gate voltage is internally clamped at - Vbe (0.6V typical), and the VDS is limited to VBAT + VBE + VGSON to prevent excessive power dissipation in the MOSFET. The load voltage is limited to VBE + VGSON and allows a reasonable discharge current. SWITCHING ON The MOSFET switching on is ensured by the internal charge pump. The charge pump response time versus the MOSFET gate capacitance is shown in Table 4, Dynamic Electrical Characteristics. SWITCHING OFF Here two cases have to be discussed: the MOSFET normally switching off, and the switching off under a fault condition. The normal switching off is done by internal pull down current sources. The value is 110mA and is in fact composed of two current sources in parallel: a 100mA and a 10mA source. The 10mA current is always connected to the gate pin 4 as shown in the Internal Block Diagram on page 2. The 100mA source can be disabled. This is the case when the MOSFET is switched off under fault conditions. The device will disable the 100mA current source and the MOSFET gate will be discharged only by a 10mA current. The time required to switch off the MOSFET will be much longer in this case, and will result in a lower overvoltage at the MOSFET, especially when the device drives high inductive loads. OFF STATE OPERATION WITHOUT VCC CONNECTION When pin 7 is in the low state, the MOSFET is off. If VBAT is present, the gate voltage is discharged by the 110mA current source. In the case of a VBAT disconnection, a self sustaining 5.0mA pull down current source is incorporated in the device, to ensure that the MOSFET gate capacitor is discharged and tied below 0.9V. In case of a VCC disconnection, input pin 7 has no effect on the gate voltage, which is maintained below 0.9V. In this case, the status pin is high. Low leakage current at pin 2 (10mA max) allows the operation with the MOSFET and MC33198 pin 2 permanently connected to the battery. VCC and other functions can be switched off from the main battery line. See Figure 18. PWM OPERATION Since the MC33198 charge pump can deliver a high current, the MOSFET gate can be charged fast enough to allow for PWM operations. The maximum PWM frequency is dependent on the MOSFET itself and mainly its gate to the source capacitor value. Depending on the PWM frequency, 33198 12 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DESCRIPTION INTRODUCTION the switch off time can be long, compared to the on-switching time response. This is due to the 110mA gate discharge current. To improve this parameter, a resistor can be added in parallel with the gate of the MOSFET. See Figures 16 and 17. Table 6. Switching Off Characteristics with MOSFET Additional Gate Resistor RGATE (RG) No R Vbat Vbat 4 1 68 kΩ 1K Rg LOAD 3 39 kΩ Figure 16. Schematic with RGATE Resistor 5V 15 kΩ INPUT SIGNAL PIN7 0V Vgate WITHOUT Rgate Vcc + 15V typ 0V Vgate WITH Rgate Toff Toff Figure 17. RGATE Signal Comparison This resistor will reduce (in some way) the charge pump output voltage available for the MOSFET, but the device will still provide enough Gate-to-Source voltage to maintain the MOSFET “on” in good conditions. The resistor will mainly act as an additional discharge current, which will reduce the switch off time of the overall application. See the Table 6, Switching Off Characteristics with MOSFET Additional Gate Resistor and Figure 15, which show the pin 4 voltage depending on the additional gate resistor and the off switching time due to this resistor. If a very low switching time is needed, the resistor has to be an extremely low value, resulting in low gate voltage not high enough to ensure proper MOSFET operation. In this case, a logic level MOSFET can be used. Logic levels will operate with VGS of 5.0V, with the same performance as a standard MOSFET having a 12V VGS. Care should be taken regarding the maximum gate to source voltage of a logic level MOSFET. An additional zener might be necessary to prevent gate oxide damage. VCC (V) VGATE (V) TOFF (µsec) 7.0 16 450 10 23 700 14 28 750 20 34 780 7.0 14 160 10 22 230 14 27 230 20 33 220 7.0 13 100 10 21 160 14 26 160 20 32 150 7.0 11 30 10 17.5 50 14 24 50 20 28.5 50 Notes 1. Time from negative edge of input signal (Pin 7) to negative edge of gate voltage (Pin 4) measured at 5V threshold. 2. Gate discharge time, not LOAD switching OFF time.L 3. TMOS used is Freescale MTP50N06, load 10Ω resistor. REVERSE BATTERY The device does not sustain reverse battery operation for VCC voltages greater than - 0.6V in magnitude. In application, pin 5 should be protected from reverse battery by connecting a diode in series with the VBAT line. Vbat Vbat R drn 5 VCC DRN 2 6 STATUS GATE 4 7 INPUT GND 3 1K SOURCE 1 TIMER 8 LOAD C Figure 18. 33198 Reverse Battery 33198 Analog Integrated Circuit Device Data Freescale Semiconductor 13 FUNCTIONAL DESCRIPTION INTRODUCTION Pin 2, which is normally connected to a resistor, can sustain a reverse battery operation, providing that the DRN resistor is higher than 3.3K. A 1K resistor at pin 1 is also necessary to limit the reverse current flowing through the MOSFET body diode. Vbat 5V OPERATION When module GND is disconnected, and if the VBAT connection is still present, pin 3 of the MC33198 goes to about 2/3 of VBAT, if additional circuitry is not inserted. With R1/Q1, the Gate/Source voltage of the MOSFET is shorted as soon as pin 3 voltage rises above GND level. See Figure 19, 33198 GND Disconnection Circuitry Vbat 5 Device drive circuitry and interface 4 6 MC33198 IN LOAD 7 1 3 8 Module Gnd C Q1 R1 Additional circuitry to present MOSFET turn-on in case of module Gnd disconnection R1 = 3,3K Q1 = 2N2222 Figure 19. 33198 GND Disconnection Circuitry 33198 14 Analog Integrated Circuit Device Data Freescale Semiconductor PACKAGING PACKAGE DIMENSIONS PACKAGING PACKAGE DIMENSIONS For the most current package revision, visit www.freescale.com and perform a keyword search using the “98A” listed below. D SUFFIX EF SUFFIX (PB-FREE) 8-PIN PLASTIC PACKAGE 98ASB42564B ISSUE U 33198 Analog Integrated Circuit Device Data Freescale Semiconductor 15 REVISION HISTORY REVISION HISTORY REVISION 2.0 DATE 11/2006 DESCRIPTION OF CHANGES • • • • • Converted to Freescale format. Implemented Revision History page. Removed Comparison of the 33198 TO the 33091 Added part number MCZ33198EF (Pb-Free) to Ordering Information on page 1 Added Peak Package Reflow Temperature During Reflow (2), (3) on page 4 33198 16 Analog Integrated Circuit Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-441-2447 or 303-675-2140 Fax: 303-675-2150 [email protected] MC33198 Rev. 2.0 11/2006 RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. 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