QFET ® FQH44N10_F133 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. • • • • • • • 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G TO-247 G D S FQH Series Absolute Maximum Ratings Symbol VDSS ID S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQH44N10_F133 100 Units V 48 A - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) 34 A 192 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 530 mJ IAR Avalanche Current (Note 1) 48 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 18 6.0 180 1.2 -55 to +175 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8∀ from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2008 Fairchild Semiconductor Corporation 1 Max 0.83 Units °C/W 0.24 -- °C/W -- 40 °C/W Rev. A, October 2008 FQH44N10_F133 Octorber 2008 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 100 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.1 IDSS IGSSF IGSSR VDS = 100 V, VGS = 0 V -- -- 1 μA VDS = 80 V, TC = 150°C -- -- 10 μA Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.03 0.039 Ω -- 31 -- S Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 24 A gFS Forward Transconductance VDS = 40 V, ID = 24 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1400 1800 pF -- 425 550 pF -- 85 110 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 50 V, ID = 43.5 A, RG = 25 Ω (Note 4, 5) VDS = 80 V, ID = 43.5 A, VGS = 10 V (Note 4, 5) -- 19 45 ns -- 190 390 ns -- 90 190 ns -- 100 210 ns -- 48 62 nC -- 9.0 -- nC -- 24 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 48 A ISM -- -- 192 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 48 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 43.5 A, dIF / dt = 100 A/μs (Note 4) -- 98 -- ns -- 360 -- nC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.345mH, IAS = 48A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 43.5A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation 2 Rev. A, October 2008 FQH44N10_F133 Electrical Characteristics FQH44N10_F133 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 10 ID , Drain Current [A] ID, Drain Current [A] 2 Top : 2 10 1 10 1 10 175∩ 25∩ 0 10 -55∩ ∝ Notes : 1. 250レs Pulse Test 2. TC = 25∩ ∝ Notes : 1. VDS = 40V 2. 250レs Pulse Test -1 0 10 -1 10 0 10 1 10 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.12 VGS = 10V 0.09 2 10 IDR , Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance 0.15 VGS = 20V 0.06 0.03 1 10 0 10 ∝ Notes : 1. VGS = 0V 2. 250レs Pulse Test 25∩ 175∩ ∝ Note : TJ = 25∩ -1 0 30 60 90 120 150 10 180 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 4000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3500 3000 Capacitance [pF] 0.2 ID , Drain Current [A] VGS, Gate-Source Voltage [V] 0.00 2500 Ciss ∝ Notes : 1. VGS = 0 V 2. f = 1 MHz Coss 2000 1500 Crss 1000 500 10 VDS = 50V VDS = 80V 8 6 4 2 ∝ Note : ID = 43.5A 0 -1 10 0 10 0 1 10 Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation 0 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 Rev. A, October 2008 (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage FQH44N10_F133 Typical Characteristics 1.1 1.0 ∝ Notes : 1. VGS = 0 V 2. ID = 250 レA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ∝ Notes : 1. VGS = 10 V 2. ID = 21.75 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 50 3 10 Operation in This Area is Limited by R DS(on) 100 μs 10 μs ID, Drain Current [A] ID, Drain Current [A] 40 2 10 1 ms 10 ms DC 1 10 0 10 ∝ Notes : 30 20 10 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area Zヨ JC(t), Thermal Response 10 75 100 125 150 175 TC, Case Temperature [∩ ] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 ∝ N o te s : 1 . Z ヨ J C ( t) = 0 .8 3 ∩ /W M a x . 2 . D u t y F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z ヨ J C ( t) 0 .2 10 -1 0 .1 0 .0 5 PDM 0 .0 2 t1 0 .0 1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation 4 Rev. A, October 2008 FQH44N10_F133 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation 5 Rev. A, October 2008 FQH44N10_F133 Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation 6 Rev. A, October 2008 FQH44N10_F133 Package Dimensions TO-247AB Dimensions in Millimeters ©2008 Fairchild Semiconductor Corporation 7 Rev. A, October 2008 FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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