QFET ® FQD18N20V2 / FQU18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. • • • • • • • 15A, 200V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant D ! D " ! " " " G! G S I-PAK D-PAK FQD Series G D S ! FQU Series S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD18N20V2 / FQU18N20V2 200 Units V 15 A - Continuous (TC = 100°C) 9.75 A 60 A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 15 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 8.3 6.5 2.5 mJ V/ns W 83 0.67 -55 to +150 W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ± 30 V 340 mJ Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 1.5 Units °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2009 Fairchild Semiconductor Corporation Rev. B2,January 2009 FQD18N20V2 / FQU18N20V2 January 2009 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 200 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.25 IDSS IGSSF IGSSR VDS = 200 V, VGS = 0 V -- -- 1 µA VDS = 160 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 0.12 0.14 Ω -- 11 -- S -- 830 1080 pF -- 200 260 pF -- 25 33 pF -- 70 -- pF -- 135 -- pF ns Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 7.5 A gFS Forward Transconductance VDS = 40 V, ID = 7.5 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss eff. Effective Output Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDS = 160 V, VGS = 0 V, f = 1.0 MHz VDS = 0V to 160 V, VGS = 0 V Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 18 A, RG = 25 Ω (Note 4, 5) VDS = 160 V, ID = 18 A, VGS = 10 V (Note 4, 5) -- 16 40 -- 133 275 ns -- 38 85 ns -- 62 135 ns -- 20 26 nC -- 5.6 -- nC -- 10 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 15 ISM -- -- 60 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 15 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 158 -- ns Qrr Reverse Recovery Charge -- 1.0 -- µC VGS = 0 V, IS = 18 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.58mH, IAS = 18A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2009 Fairchild Semiconductor Corporation Rev. B2, January 2009 FQD18N20V2 / FQU18N20V2 Electrical Characteristics VGS Top : 15.0 V 10.0 V ID, Drain Current [A] 10 8.0 V 1 7.0 V 1 ID , Drain Current [A] 6.5 V 6.0 V Bottom : 10 5.5 V 0 ※ Notes : 10 -1 150℃ 10 25℃ -55℃ 0 10 1. 250μ s Pulse Test ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test 2. TC = 25℃ 10 -1 10 0 10 1 -1 10 VDS, Drain-Source Voltage [V] 4 5 Figure 1. On-Region Characteristics 6 7 8 9 VGS , Gate-Source Voltage [V] 10 Figure 2. Transfer Characteristics 0.4 VGS = 10V IDR , Reverse Drain Current [A] R DS(ON) [Ω ], Drain-Source On-Resistance 0.5 1 10 VGS = 20V 0.3 0.2 0 10 0.1 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ 0.0 0 10 20 30 40 50 60 -1 10 ID, Drain Current [A] 0.2 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 2500 Ciss = C gs + Cgd (Cds = shorted) Coss = Cds + Cgd 1. VGS = 0 V 2. f = 1 MHz Ciss 1000 Coss 500 Crss VGS , Gate-Source Voltage [V] ※ Notes : 1500 VDS = 40V 10 Crss = C gd 2000 Capacitance [pF] 0.4 VDS = 100V VDS = 160V 8 6 4 2 ※ Note : ID = 18A 0 -1 10 10 0 10 1 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2009 Fairchild Semiconductor Corporation 0 0 5 10 15 20 25 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. B2, January 2009 FQD18N20V2 / FQU18N20V2 Typical Characteristics (Continued) 3.0 2.5 R DS(ON) , (Normalized) 1.1 1.0 ※ Notes : 0.9 1. VGS = 0 V 2. ID = 250 μ A 0.8 -100 -50 0 50 100 150 Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 ※ Notes : 0.5 1. VGS = 10 V 2. ID = 7.5 A 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 20 15 ID, Drain Current [A] ID , Drain Current [A] 200 is Limited by R DS(on) 2 100 us 1 ms 1 10 ms DC 10 150 Figure 8. On-Resistance Variation vs. Temperature Operation in This Area 10 100 o Figure 7. Breakdown Voltage Variation vs. Temperature 10 50 TJ, Junction Temperature [ C] 0 ※ Notes : o 1. TC = 25 C 10 5 o 2. TJ = 150 C 3. Single Pulse 0 25 -1 10 0 1 10 10 10 2 50 75 1. Z -5 JC (t) = 1 .5 ℃ /W M a x . 2 . D u ty F a c to r, D = t1 /t2 0 .0 2 0 .0 1 3. T JM - T C = P * Z D M θ JC (t) PDM t1 -2 10 θ 0 .0 5 s in g le p u ls e θ Z N o te s : ※ -1 JC (t) , T h e r m a l R e s p o n s e D = 0 .5 0 .2 10 150 0 0 .1 10 125 Figure 10. Maximum Drain Current vs. Case Temperature Figure 9. Maximum Safe Operating Area 10 100 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ] Figure 11. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation Rev. B2, January 2009 FQD18N20V2 / FQU18N20V2 Typical Characteristics FQD18N20V2 / FQU18N20V2 Gate Charge Test Circuit & Waveform 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on t off tf Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG VDD DUT 10V tp ©2009 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. B2, January 2009 FQD18N20V2 / FQU18N20V2 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2009 Fairchild Semiconductor Corporation Rev. B2, January 2009 FQD18N20V2 / FQU18N20V2 Mechanical Dimensions TO-252 (DPAK) (FS PKG Code 36) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 ©2009 Fairchild Semiconductor Corporation Rev. B2, January 2009 FQD18N20V2 / FQU18N20V2 Mechanical Dimensions I - PAK Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 ©2009 Fairchild Semiconductor Corporation Rev. B2. January 2009