FAIRCHILD FQD10N20C_09

QFET
®
FQD10N20C / FQU10N20C
200V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
•
•
•
•
•
•
7.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
Low gate charge ( typical 20 nC)
Low Crss ( typical 40.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
FQD10N20C / FQU10N20C
January 2009
• RoHS Compliant
D
!
D
●
◀
G
S
I-PAK
D-PAK
FQD Series
G!
G D S
▲
●
●
FQU Series
!
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQD10N20C / FQU10N20C
200
Units
V
7.8
A
5.0
A
31.2
A
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
± 30
V
(Note 2)
210
mJ
Avalanche Current
(Note 1)
7.8
A
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
5.0
5.5
50
0.4
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
Max
2.5
Units
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient*
--
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
Rev. A2, January 2009
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
200
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.28
IDSS
IGSSF
IGSSR
VDS = 200 V, VGS = 0 V
--
--
10
µA
VDS = 160 V, TC = 125°C
--
--
100
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.29
0.36
Ω
--
5.6
--
S
--
395
510
pF
--
97
125
pF
--
40.5
53
pF
ns
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.9 A
gFS
Forward Transconductance
VDS = 40 V, ID = 3.9 A
(Note 4)
FQD10N20C / FQU10N20C
Electrical Characteristics
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100 V, ID = 9.5 A,
RG = 25 Ω
(Note 4, 5)
VDS = 160 V, ID = 9.5 A,
VGS = 10 V
(Note 4, 5)
--
11
30
--
92
190
ns
--
70
150
ns
--
72
160
ns
--
20
26
nC
--
3.1
--
nC
--
10.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
7.8
A
ISM
--
--
31.2
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 7.8 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 9.5 A,
dIF / dt = 100 A/µs
(Note 4)
--
158
--
ns
--
0.97
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.2mH, IAS = 7.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Rev. A2, January 2009
FQD10N20C / FQU10N20C
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
o
150 C
o
25 C
o
-55 C
0
10
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
10
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
-1
-1
0
10
10
1
10
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.5
IDR , Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
1
10
1.0
VGS = 10V
VGS = 20V
0.5
※ Note : TJ = 25℃
0.0
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
-1
0
5
10
15
20
25
30
10
0.2
0.4
ID, Drain Current [A]
1200
Ciss
Coss
600
Crss
400
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
200
1.0
1.2
1.4
1.6
12
VDS = 40V
10
VGS , Gate-Source Voltage [V]
800
0.8
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
0.6
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Capacitances [pF]
25℃
VDS = 100V
VDS = 160V
8
6
4
2
※ Note : ID = 9.5A
0
-1
10
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2009 Fairchild Semiconductor Corporation
0
0
4
8
12
16
20
24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2, January 2009
(Continued)
3.0
1.2
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 3.9 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
2
10
10
Operation in This Area
is Limited by R DS(on)
8
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
1
10
1 ms
10 ms
DC
0
10
※ Notes :
o
1. TC = 25 C
4
2
o
2. TJ = 150 C
3. Single Pulse
-1
10
6
0
1
10
0
25
2
10
10
50
150
※ N o te s :
1 . Z θJC(t) = 2 .5 ℃ /W M a x .
2 . D u t y F a c to r , D = t 1 / t 2
3 . T JM - T C = P DM * Z θJC(t)
0 .2
0 .0 5
10
125
Figure 10. Maximum Drain Current
vs Case Temperature
0 .1
10
100
D = 0 .5
0
-1
0 .0 2
0 .0 1
PDM
s in g le p u ls e
θJ C
Z (t), T h e rm a l R e s p o n s e
Figure 9. Maximum Safe Operating Area
10
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
t1
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
Rev. A2, January 2009
FQD10N20C / FQU10N20C
Typical Characteristics
FQD10N20C / FQU10N20C
Gate Charge Test Circuit & Waveform
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2009 Fairchild Semiconductor Corporation
ID (t)
VDS (t)
VDD
tp
Time
Rev. A2, January 2009
FQD10N20C / FQU10N20C
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2009 Fairchild Semiconductor Corporation
Rev. A2, January 2009
FQD10N20C / FQU10N20C
Package Dimensions
TO-252 (DPAK) (FS PKG Code 36)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Part Weight per unit (gram): 0.33
©2009 Fairchild Semiconductor Corporation
Rev. A2, January 2009
FQD10N20C / FQU10N20C
Package Dimensions
I - PAK
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Part Weight per unit (gram): 0.44
A
6.80
6.35
5.54
5.14
2.50
2.10
1.27
0.50
1.52
0.70
1
C
2
0.88
0.64
6.30
5.90
2.28
1.60
3
1.14
0.76
(0.60)
0.60
0.40
2.29
9.65
8.90
1.14
0.90
0.60
0.40
0.25 M A M C
3 PLCS
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
Rev. A2, January 2009
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I37
©2009 Fairchild Semiconductor Corporation
Rev. A2. January 2009
FQD10N20C / FQU10N20C
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