FQD5P20 / FQU5P20 October 2008 QFET ® FQD5P20 / FQU5P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. • • • • • • -3.7A, -200V, RDS(on) = 1.4Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested RoHS Compliant S ! D ● ● G! ▶ ▲ ● G S I-PAK D-PAK FQD Series G D S FQU Series ! D Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD5P20 / FQU5P20 -200 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage - Pulsed (Note 1) Units V -3.7 A -2.34 A -14.8 A ± 30 V mJ EAS Single Pulsed Avalanche Energy (Note 2) 330 IAR Avalanche Current (Note 1) -3.7 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 4.5 -5.5 2.5 mJ V/ns W 45 0.36 -55 to +150 W W/°C °C 300 °C dv/dt PD (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 2.78 Units °C/W RθJA RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units -200 -- -- V -- -0.17 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS IGSSF IGSSR VDS = -200 V, VGS = 0 V -- -- -1 µA VDS = -160 V, TC = 125°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10•V, ID = -1.85 A -- 1.1 1.4 Ω gFS Forward Transconductance VDS = -40 V, ID = -1.85 A -- 2.2 -- S -- 330 430 pF -- 75 98 pF -- 12 15 pF ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -100 V, ID = -4.8 A, RG = 25 Ω (Note 4, 5) VDS = -160 V, ID = -4.8 A, VGS = -10 V (Note 4, 5) -- 9 28 -- 70 150 ns -- 12 35 ns -- 25 60 ns -- 10 13 nC -- 2.8 -- nC -- 5.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -3.7 A ISM -- -- -14.8 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -3.7 A Drain-Source Diode Forward Voltage -- -- -5.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -4.8 A, dIF / dt = 100 A/µs (Note 4) -- 175 -- ns -- 1.07 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 36.2mH, IAS = -3.7A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -4.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 FQD5P20 / FQU5P20 Elerical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V 1 1 Top : 0 10 10 -I D , Drain Current [A] -I D, Drain Current [A] 10 -1 10 ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ 0 150℃ 10 25℃ ※ Notes : 1. VDS = -40V 2. 250μs Pulse Test -55℃ -2 -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] 3.0 1 VGS = - 10V 2.4 -I DR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 10 VGS = - 20V 1.8 1.2 0.6 ※ Note : TJ = 25℃ 0.0 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test 25℃ -1 0 3 6 9 10 12 0.0 0.5 -ID , Drain Current [A] 1.0 1.5 2.0 2.5 3.0 -VSD , Source-Drain Voltage [V] 12 750 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = -40V 10 600 VDS = -100V Ciss 450 Coss 300 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 150 0 -1 10 -V GS , Gate-Source Voltage [V] Capacitance [pF] FQD5P20 / FQU5P20 Typical Characteristics VDS = -160V 8 6 4 2 ※ Note : ID = -4.8 A 0 0 10 1 10 -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics ©2008 Fairchild Semiconductor Internationa 0 2 4 6 8 10 12 QG, Total Gate Charge [nC] Figure 2. Transfer Characteristics Rev. A1, October 2008 (Continued) 2.5 1.2 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage FQD5P20 / FQU5P20 Typical Characteristics 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μA 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -2.4 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 4 Operation in This Area is Limited by R DS(on) 1 -I D, Drain Current [A] -I D, Drain Current [A] 3 100 µs 10 1 ms 10 ms DC 0 10 ※ Notes : 2 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 ※ N o te s : 1 . Z θ J C ( t ) = 2 . 7 8 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .2 0 .1 0 .0 5 10 PDM 0 .0 2 -1 0 .0 1 10 -5 t1 s in g le p u ls e Z θ JC 75 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] 10 -4 10 t2 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 FQD5P20 / FQU5P20 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on VDD VGS RG td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V tp ©2008 Fairchild Semiconductor Internationa VDD Time VDS (t) ID (t) IAS BVDSS Rev. A1, October 2008 FQD5P20 / FQU5P20 Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt ©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 FQD5P20 / FQU5P20 Mechanical Dimensions D - PAK Dimensions in Millimeters ©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 FQD5P20 / FQU5P20 Mechanical Dimensions I - PAK Dimensions in Millimeters ©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ FQD5P20 / FQU5P20 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FQD5P20 / FQU5P20 Rev. A1 www.fairchildsemi.com