FAIRCHILD FQB13N50CTM

QFET
FQB13N50C/FQI13N50C
500V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
•
•
•
•
•
•
•
13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V
Low gate charge ( typical 43nC)
Low Crss ( typical 20pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS Compliant
®
FQB13N50C/FQI13N50C
October 2008
D
!
D
"
G
S
D2-PAK
FQB Series
Absolute Maximum Ratings
Symbol
VDSS
ID
G D S
!
S
TC = 25°C unless otherwise noted
FQB13N50C / FQI13N50C
500
Units
V
13
A
- Continuous (TC = 100°C)
Drain Current
"
"
FQI Series
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
IDM
! "
G!
I2-PAK
- Pulsed
(Note 1)
8
A
52
A
± 30
V
860
mJ
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
13
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
19.5
4.5
195
1.56
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
Max
0.64
Units
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient *
--
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
* When mounted on the minium pad size recommended (PCB Mount).
©2008 Fairchild Semiconductor Corporation
Rev. A1, October 2008
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
500
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.5
IDSS
IGSSF
IGSSR
VDS = 500 V, VGS = 0 V
--
--
1
µA
VDS = 400 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.39
0.48
Ω
--
15
--
S
--
1580
2055
pF
--
180
235
pF
--
20
25
pF
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 6.5 A
gFS
Forward Transconductance
VDS = 40 V, ID = 6.5 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 13 A,
RG = 25 Ω
(Note 4, 5)
VDS = 400 V, ID = 13 A,
VGS = 10 V
(Note 4, 5)
--
25
60
ns
--
100
210
ns
--
130
270
ns
--
100
210
ns
--
43
56
nC
--
7.5
--
nC
--
18.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
13
A
ISM
--
--
52
A
--
--
1.4
V
--
410
--
ns
--
4.5
--
µC
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 13 A
Drain-Source Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 13 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L =6.0 mH, IAS = 13A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2008 Fairchild Semiconductor Corporation
Rev. A1, October 2008
FQB13N50C/FQI13N50C
Electrical Characteristics
FQB13N50C/FQI13N50C
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
1
10
o
150 C
ID, Drain Current [A]
1
10
0
o
-55 C
o
25 C
0
10
10
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
-1
-1
10
10
-1
0
10
2
1
10
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1
VGS = 10V
1.0
VGS = 20V
0.5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
1.5
10
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
25℃
※ Note : TJ = 25℃
-1
0
5
10
15
20
25
30
35
10
0.2
0.4
ID, Drain Current [A]
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 100V
10
VDS = 250V
Ciss
Capacitance [pF]
2000
Coss
1500
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
500
VGS, Gate-Source Voltage [V]
2500
VDS = 400V
8
6
4
2
※ Note : ID = 13A
0
0
-1
10
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2008 Fairchild Semiconductor Corporation
0
10
20
30
40
50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, October 2008
FQB13N50C/FQI13N50C
Package Dimensions
(Continued)
1.2
3.0
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
RDS(ON) , (Normalized)
Drain-Source On-Resistance
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 6.5 A
0.5
0.0
-100
200
-50
0
100
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
14
Operation in This Area
is Limited by R DS(on)
2
10
12
10 µs
100 µs
10
ID, Drain Current [A]
ID, Drain Current [A]
50
o
o
1 ms
10 ms
100 ms
DC
1
10
0
10
※ Notes :
8
6
4
o
1. TC = 25 C
2
o
2. TJ = 150 C
3. Single Pulse
0
25
-1
10
0
1
10
2
10
3
10
10
50
75
(t), T h e rm a l R e s p o n s e
Z
10
θ JC
10
125
150
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9. Maximum Safe Operating Area
10
100
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
0
D = 0 .5
0 .2
※ N o te s :
1 . Z θ J C ( t) = 0 .6 4 ℃ /W M a x .
2 . D u t y F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
-1
0 .1
0 .0 5
0 .0 2
0 .0 1
-2
PDM
s in g le p u ls e
t1
t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2008 Fairchild Semiconductor Corporation
Rev. A1, October 2008
FQB13N50C/FQI13N50C
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2008 Fairchild Semiconductor Corporation
ID (t)
VDS (t)
VDD
tp
Time
Rev. A1, October 2008
FQB13N50C/FQI13N50C
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2008 Fairchild Semiconductor Corporation
Rev. A1, October 2008
FQB13N50C/FQI13N50C
Mechanical Dimensions
I2 - PAK
Dimensions in Millimeters
©2008 Fairchild Semiconductor Corporation
Rev. A1, October 2008
FQB13N50C/FQI13N50C
Mechanical Dimensions
D2 - PAK
Dimensions in Millimeters
©2008 Fairchild Semiconductor Corporation
Rev. A1, October 2008
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I37
FQB13N50C/FQI13N50C Rev. A1
www.fairchildsemi.com
FQB13N50C/FQI13N50C
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