6MBI75VA-060-50 IGBT Modules IGBT MODULE (V series) 600V / 75A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Junction temperature Conditions VCES VGES Ic Icp -Ic -Ic pulse Pc Tj Continuous 1ms 1ms 1 device Tc=80°C Tc=80°C Maximum ratings 600 ±20 75 150 75 150 275 175 Operating junciton temperature (under switching conditions) Tjop 150 Case temperature Storage temperature Tc Tstg 125 -40 to +125 Isolation voltage between terminal and copper base (*1) Viso between thermistor and others (*2) AC : 1min. Screw torque Mounting (*3) M5 - V V A W °C 2500 VAC 3.5 Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 Units 6MBI75VA-060-50 IGBT Modules Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Conditions I CES I GES VGE (th) VGE = 0V, VCE = 600V VGE = 0V, VGE = ±20V VCE = 20V, I C = 75mA VCE (sat) (terminal) VGE = 15V I C = 75A Collector-Emitter saturation voltage Inverter VCE (sat) (chip) Input capacitance Cies ton tr tr (i) toff tf Turn-on time Turn-off time Tj=25°C Tj=125°C Tj=150°C Tj=25°C VGE = 15V Tj=125°C I C = 75A Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VCC = 300V I C = 75A VGE = +15 / -15V RG = 30Ω VF (terminal) Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C I F = 75A Forward on voltage VF (chip) I F = 75A trr Resistance R B value B I F = ±20 T = 25°C T = 100°C T = 25 / 50°C Items Symbols Conditions Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) Thermistor Reverse recovery time Characteristics min. typ. max. 1.0 200 6.2 6.7 7.2 2.00 2.45 2.30 2.50 1.60 2.05 1.90 2.10 4.9 0.39 1.20 0.09 0.60 0.03 0.53 1.00 0.06 0.30 2.00 2.45 1.90 1.85 1.60 2.05 1.50 1.47 0.35 5000 465 495 520 3305 3375 3450 Units mA nA V V nF µs V µs Ω K Thermal resistance characteristics Characteristics min. typ. max. 0.50 0.95 0.05 - Inverter IGBT Inverter FWD with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. Equivalent Circuit Schematic [ Inverter ] [ Thermistor ] 15,16 25,26 1 2 5 6 9 10 U 23,24 3 4 V 21,22 7 8 W 19,20 11 12 27,28 13,14 2 17 18 Units °C/W 6MBI75VA-060-50 IGBT Modules Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip Tj= 150oC / chip 150 VGE=20V 125 15V 100 10V 75 50 25 12V 125 100 10V 75 50 8V 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector-Emitter voltage: VCE [V] Collector-Emitter voltage: VCE [V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip 8 Tj=25°C 150°C 125 Collector - Emitter voltage: VCE [V] 150 125°C 100 75 50 25 0 6 4 Ic=150A Ic=75A Ic= 38A 2 0 0 1 2 3 4 5 5 10 15 20 25 Collector-Emitter voltage: VCE[V] Gate - Emitter voltage: VGE [V] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) [ Inverter ] Dynamic gate charge (typ.) Vcc=300V, Ic=75A, Tj= 25°C Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] VGE=0V, f= 1MHz, Tj= 25oC 100.0 Capacitance: Cies, Coes, Cres [nF] 15V 25 8V 0 Collector current: IC [A] VGE=20V 12V Collector current: IC [A] Collector current: IC [A] 150 10.0 Cies 1.0 Coes Cres 0.1 0 10 20 30 40 VGE VCE 0 Collector - Emitter voltage: VCE [V] 100 200 300 400 Gate charge: Qg [nC] 3 500 600 6MBI75VA-060-50 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=30Ω, Tj= 150°C 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=30Ω, Tj= 125°C ton toff tr 100 tf 10 0 50 100 150 200 10000 1000 ton tr toff 100 tf 10 0 Collector current: IC [A] Switching loss : Eon, Eoff, Err [mJ/pulse ] toff ton tr 1000 tf 100 100.0 1000.0 200 6 Eon(150°C) Eon(125°C) 5 Eoff(150°C) Eoff(125°C) 4 3 2 Err(150°C) Err(125°C) 1 0 0 25 50 75 100 125 150 Gate resistance : Rg [Ω] Collector current: IC [A] [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=300V, Ic=75A, VGE=±15V [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 30Ω ,Tj <= 125°C 20 200 Eoff(150°C) Eoff(125°C) Collector current: IC [A] Switching time : ton, tr, toff, tf [ nsec ] Switching loss : Eon, Eoff, Err [mJ/pulse ] 150 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=30Ω 10000 15 10 Eon(150° Eon(125°C) 5 Err(150°C) Err(125°C) 0 10 100 Collector current: IC [A] [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=300V, Ic=75A, VGE=±15V, Tj= 125°C 10 10.0 50 100 150 100 RBSOA (Repetitive pulse) 50 0 0 1000 100 200 300 400 500 600 700 Collector-Emitter voltage : VCE [V] Gate resistance : Rg [Ω] 4 800 6MBI75VA-060-50 IGBT Modules [ Inverter ] Forward current vs. forward on voltage (typ.) chip [ Inverter ] Reverse recovery characteristics (typ.) 150 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [A] 125 100 75 Tj=125°C 50 25 Tj=25°C Tj=150°C 0 0 1 2 3 4 Irr(125°C) 100 trr(150°C) trr(125°C) 10 0 50 100 150 Forward on voltage : VF [V] Forward current : IF [A] Transient thermal resistance (max.) [ Thermistor ] Temperature characteristic (typ.) 10.00 100 FWD[Inverter] 1.00 IGBT[Inverter] 0.10 0.01 0.001 Irr(150°C) 5 Resistance : R [kΩ] Thermal resistanse : Rth(j-c) [ °C/W ] Vcc=600V, VGE=±15V, Rg=38Ω 1000 0.010 0.100 10 1 0.1 1.000 -60 Pulse width : Pw [sec] -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [°C ] Outline Drawings, mm 5 200 6MBI75VA-060-50 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. 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