http://www.fujielectric.com/products/semiconductor/ 2MBI450VN-170-50 IGBT Modules IGBT MODULE (V series) 1700V / 450A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Conditions Inverter Absolute Maximum Ratings (at TC =25°C unless otherwise specified) IC Continuous Collector current 1ms IC pulse -IC -IC pulse Collector power dissipation PC Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Storage temperature Tstg between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) Mounting (*3) Screw torque Terminals (*4) - TC =25°C TC =100°C 1ms 1 device AC : 1min. Maximum ratings 1700 ±20 600 450 900 450 900 2500 175 150 -40 ~ 125 Units V V 3400 VAC 3.5 4.5 Nm A W °C Note *1:All terminals should be connected together during the test. Note *2:Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3:Recommendable Value : 2.5-3.5 Nm (M5) Note *4:Recommendable Value : 3.5-4.5 Nm (M6) Electrical characteristics (at Tj = 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Inverter Collector-Emitter saturation voltage Internal gate resistance Input capacitance Conditions ICES IGES VGE (th) VGE = 0V, VCE = 1700V VCE = 0V, VGE = ±20V VCE = 20V, IC = 450mA VCE (sat) (terminal) VCE (sat) (chip) VGE = 15V IC = 450A Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C Reverse recovery time trr Resistance R B value B VCE = 10V, VGE = 0V, f = 1MHz VCC = 900V IC = 450A VGE = ±15V RG = 3.3Ω LS = 80nH Tj =25°C Tj =125°C Tj =150°C VGE = 0V IF = 450A Tj =25°C Tj =125°C Tj =150°C IF = 450A T = 25°C T = 100°C T = 25/50°C Symbols Conditions Turn-on time Turn-off time Forward on voltage Thermistor Symbols RG (int) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) Thermal resistance characteristics Items Thermal resistance(1device) Rth(j-c) Contact thermal resistance (1device) (*5) Rth(c-f) Inverter IGBT Inverter FWD with Thermal Compound Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Characteristics min. typ. max. 3.0 600 6.0 6.5 7.0 2.65 3.10 3.10 3.15 2.00 2.45 2.45 2.50 1.67 40 900 400 100 1300 100 2.45 2.90 2.75 2.70 1.80 2.25 2.10 2.05 250 5000 465 495 520 3305 3375 3450 Characteristics min. typ. max. 0.06 0.10 0.0167 - Units mA nA V V Ω nF nsec V nsec Ω K Units °C/W 2MBI450VN-170-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 1000 1000 15V VGE=20V 600 10V 400 15V 800 Collector current: IC [A] 200 12V 600 10V 400 200 8V 8V 0 0 0 1 2 3 4 0 5 2 3 4 5 Collector-Emitter voltage: VCE [V] Collector-Emitter voltage: VCE [V] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip [INVERTER] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip 1000 10 Tj=25°C Collector-Emitter Voltage: VCE [V] 125°C 800 Collector Current: IC [A] 1 150°C 600 400 200 0 0 1 2 3 4 8 6 4 IC=900A IC=450A IC=225A 2 0 5 5 10 15 20 25 Gate-Emitter Voltage: VGE [V] [INVERTER] Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C [INVERTER] Dynamic Gate Charge (typ.) VCC=900V, IC=450A, Tj= 25°C 20 1000 Gate-Emitter voltage: VGE [V] Gate Capacitance: Cies, Coes, Cres [nF] Collector-Emitter Voltage: VCE [V] 100 Cies 10 Cres 0 10 20 10 30 Collector-Emitter voltage: VCE [V] 750 VCE 500 5 250 0 0 -250 -5 -10 -15 -20 -5000 Coes 1 15 1000 -500 VGE -3000 -750 -1000 1000 3000 Gate charge: Qg [μC] 2 -1000 5000 Collector-Emitter voltage: VCE [V] Collector current: IC [A] VGE= 20V 12V 800 2MBI450VN-170-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [INVERTER] Switching time vs. Collector current (typ.) VCC=900V, VGE=±15V, RG=3.3Ω, Tj=25°C [INVERTER] Switching time vs. Collector current (typ.) VCC=900V, VGE=±15V, RG=3.3Ω, Tj=125°C, 150°C 10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] 10000 toff 1000 ton tr 100 tf toff 1000 ton 0 tf 100 200 400 600 800 0 1000 200 400 600 800 1000 Collector current: IC [A] Collector current: IC [A] [INVERTER] Switching time vs. Gate resistance (typ.) VCC=900V, IC=450A, VGE=±15V, Tj=125°C, 150°C [INVERTER] Switching loss vs. Collector current (typ.) VCC=900V, VGE=±15V, RG=3.3Ω, Tj=125°C, 150°C Tj=125 oC Tj=150 oC 400 toff Switching loss: Eon, Eoff, Err [mJ/pulse] 10000 ton tr 1000 tf 100 10 1 10 Tj=125 oC Tj=150 oC Eon 300 Eoff 200 Err 100 0 0 100 Gate resistance: RG [Ω] 200 400 600 800 1000 Collector current: IC [A] [INVERTER] [INVERTER] Switching loss vs. Gate resistance (typ.) VCC=900V, IC=450A, VGE=±15V, Tj=125, 150°C Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, RG=3.3Ω, Tj=150°C 600 1200 Tj=125oC Tj=150oC 500 1000 Collector current: IC [A] Switching loss: Eon, Eoff, Err [mJ/pulse] tr 10 10 Switching time: ton, tr, toff, tf [nsec] Tj=125 oC Tj=150 oC 400 Eon 300 200 Eoff 100 800 Notice) Switching characteristics of VCE is defined between Sense C and Sense E1 for Upper arm and Sense E1 and Sense E2 for Lower arm . 600 400 200 Err 0 1 10 0 100 0 Gate resistance: RG [Ω] 500 1000 1500 Collector-Emitter voltage: VCE [V] 3 2000 2MBI450VN-170-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [INVERTER] Forward Current vs. Forward Voltage (typ.) chip [INVERTER] Reverse Recovery Characteristics (typ.) VCC=900V, VGE=±15V, RG=3.3Ω, Tj=25°C 1000 1000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Tj=25°C Forward current: IF [A] 800 125°C 600 400 200 150°C 0 Irr trr 100 10 0 1 2 3 4 0 200 400 600 800 1000 Forward current: IF [A] Forward on voltage: VF [V] [INVERTER] Reverse Recovery Characteristics (typ.) VCC=900V, VGE=±15V, RG=3.3Ω, Tj=125°C, 150°C Transient Thermal Resistance (max.) 1000 1 Thermal resistanse: Rth(j-c) [°C/W] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Irr trr 100 Tj=125 oC Tj=150 oC 10 0 200 400 600 800 1000 FWD 0.1 IGBT 0.01 τ Rth [°C/W] 0.001 0.001 Forward current: IF [A] [sec] IGBT FWD 0.0023 0.0301 0.0598 0.0708 0.00644 0.01632 0.02305 0.01420 0.01073 0.02719 0.03842 0.02366 0.01 0.1 1 Pulse Width : Pw [sec] [THERMISTOR] FWD safe operating area (max.) Tj=150°C Temperature characteristic (typ.) 1000 Reverse recovery current: Irr [A] Resistance : R [kΩ] 100 10 1 800 Pmax=562kW 600 400 Notice) Switching characteristics of VCE is defined between Sense C and Sense E1 for Upper arm and Sense E1 and Sense E2 for Lower arm . 200 0 0.1 -60 -40 -20 0 20 40 60 Temperature [°C] 0 80 100 120 140 160 500 1000 1500 Collector-Emitter voltage: VCE [V] 4 2000 2MBI450VN-170-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ OUT P N Outline Drawings, mm Weight: 300g (typ.) Equivalent Circuit Schematic [ Inverter ] P (2) [ Thermistor ] C T1 T2 G1 E1 OUT G2 E2 N (1) 5 (3, 4) 2MBI450VN-170-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. 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