http://www.fujielectric.com/products/semiconductor/ 2MBI550VJ-170-50 IGBT Modules IGBT MODULE (V series) 1700V / 550A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Conditions Inverter Absolute Maximum Ratings (at TC =25°C unless otherwise specified) IC Continuous Collector current 1ms IC pulse -IC -IC pulse Collector power dissipation PC Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Storage temperature Tstg between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) Mounting (*3) Screw torque Terminals (*4) PC-Board (*5) - TC =25°C TC =100°C 1ms 1 device AC : 1min. Maximum ratings 1700 ±20 750 550 1100 550 1100 3750 175 150 -40 ~ 125 Units V V 3400 VAC 3.5 4.5 0.6 Nm A W °C Note *1:All terminals should be connected together during the test. Note *2:Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3:Recommendable Value : 2.5-3.5 Nm (M5) Note *4:Recommendable Value : 3.5-4.5 Nm (M6) Note *5:Recommendable Value : 0.4-0.6 Nm (M2.5) Electrical characteristics (at Tj = 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Inverter Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Thermistor Forward on voltage Symbols Conditions ICES IGES VGE (th) VGE = 0V, VCE = 1700V VCE = 0V, VGE = ±20V VCE = 20V, IC = 550mA VCE (sat) (terminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) Tj =25°C Tj =125°C Tj =150°C VGE = 15V IC = 550A Tj =25°C Tj =125°C Tj =150°C VCE = 10V, VGE = 0V, f = 1MHz VCC = 900V IC = 550A VGE = ±15V RG = 3.3Ω VGE = 0V IF = 550A Reverse recovery time trr Resistance R B value B IF = 550A T = 25°C T = 100°C T = 25/50°C Symbols Conditions Thermal resistance characteristics Items Thermal resistance(1device) Rth(j-c) Contact thermal resistance (1device) (*6) Rth(c-f) Inverter IGBT Inverter FWD with Thermal Compound Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C Characteristics min. typ. max. 3.0 600 6.0 6.5 7.0 3.00 3.45 3.55 3.60 2.15 2.60 2.70 2.80 40 1000 500 120 1300 100 2.80 3.25 3.10 3.05 1.95 2.40 2.25 2.20 250 5000 465 495 520 3305 3375 3450 Characteristics min. typ. max. 0.04 0.06 0.0167 - Units mA nA V V nF nsec V nsec Ω K Units °C/W 2MBI550VJ-170-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 1200 1200 VGE=20V 800 600 10V 400 200 12V 800 600 10V 400 200 8V 8V 0 0 0 1 2 3 4 0 5 1 2 3 4 Collector-Emitter voltage: VCE [V] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip [INVERTER] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip Tj=25°C 10 125°C Collector-Emitter Voltage: VCE [V] 1000 150°C 800 600 400 200 0 0 1 2 3 4 5 8 6 4 IC=1100A IC=550A IC=275A 2 0 5 10 15 20 Collector-Emitter Voltage: VCE [V] Gate-Emitter Voltage: VGE [V] [INVERTER] Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C [INVERTER] Dynamic Gate Charge (typ.) VCC=900V, IC=550A, Tj= 25°C 1000 Collector-Emitter voltage: VCE [200V/div] Gate-Emitter voltage: VGE [5V/div] Gate Capacitance: Cies, Coes, Cres [nF] 5 Collector-Emitter voltage: VCE [V] 1200 Collector Current: IC [A] 15V VGE= 20V 1000 12V Collector current: IC [A] 1000 Collector current: IC [A] 15V 100 Cies 10 Cres Coes 1 0 10 20 30 Collector-Emitter voltage: VCE [V] VGE VCE 0 1000 2000 3000 4000 Gate charge: Qg [μC] 2 25 5000 2MBI550VJ-170-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [INVERTER] Switching time vs. Collector current (typ.) VCC=900V, VGE=±15V, RG=3.3Ω, Tj=25°C [INVERTER] Switching time vs. Collector current (typ.) VCC=900V, VGE=±15V, RG=3.3Ω, Tj=125°C, 150°C 10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] 10000 toff 1000 ton tr 100 tf toff 1000 0 200 400 600 800 1000 tf 100 0 1200 200 400 600 800 1000 1200 Collector current: IC [A] Collector current: IC [A] [INVERTER] Switching time vs. Gate resistance (typ.) VCC=900V, IC=550A, VGE=±15V, Tj=125°C, 150°C [INVERTER] Switching loss vs. Collector current (typ.) VCC=900V, VGE=±15V, RG=3.3Ω, Tj=125°C, 150°C 10000 toff Switching loss: Eon, Eoff, Err [mJ/pulse] 500 ton tr 1000 tf 100 Tj=125 oC Tj=150 oC 10 1 10 Tj=125 oC Tj=150 oC 400 Eon Eoff 300 200 Err 100 0 0 100 Gate resistance: RG [Ω] 200 400 600 800 1000 1200 Collector current: IC [A] [INVERTER] [INVERTER] Switching loss vs. Gate resistance (typ.) VCC=900V, IC=550A, VGE=±15V, Tj=125, 150°C Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, RG=3.3Ω, Tj=150°C 800 1200 Tj=125 oC Tj=150 oC Eon 1000 600 Collector current: IC [A] Switching loss: Eon, Eoff, Err [mJ/pulse] tr ton 10 10 Switching time: ton, tr, toff, tf [nsec] Tj=125 oC Tj=150 oC 400 Eoff 200 800 Notice) Switching characteristics of VCE is defined between Sense CX1 and Sense EX1 for Upper arm and Sense EX1 and Sense EX2 for Lower arm . 600 400 200 Err 0 1 10 0 100 0 Gate resistance: RG [Ω] 500 1000 1500 Collector-Emitter voltage: VCE [V] 3 2000 2MBI550VJ-170-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [INVERTER] Forward Current vs. Forward Voltage (typ.) chip Tj=25°C 1000 Forward current: IF [A] 1000 150°C Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 1200 [INVERTER] Reverse Recovery Characteristics (typ.) VCC=900V, VGE=±15V, RG=3.3Ω, Tj=25°C 125°C 800 600 400 200 0 Irr trr 100 10 0 1 2 3 4 0 Forward on voltage: Vf [V] 200 400 600 800 1000 1200 Forward current: IF [A] Forward on voltage: VF [V] [INVERTER] Reverse Recovery Characteristics (typ.) VCC=900V, VGE=±15V, RG=3.3Ω, Tj=125°C, 150°C Transient Thermal Resistance (max.) 1000 1 Thermal resistanse: Rth(j-c) [°C/W] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Irr trr 100 Tj=125 oC Tj=150 oC 10 0 200 400 600 800 1000 1200 Forward current: IF [A] [THERMISTOR] Resistance : R [kΩ] 100 10 1 0.1 0 20 40 60 Temperature [°C] FWD IGBT 0.01 0.001 0.001 0.01 0.1 Pulse Width : Pw [sec] Temperature characteristic (typ.) -60 -40 -20 0.1 80 100 120 140 160 4 1 2MBI550VJ-170-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Weight: 300g (typ.) Equivalent Circuit Schematic [ Inverter ] [ Thermistor ] + CX1 T1 T2 G1.1 G1 . 2 G1 . 3 EX1.1 E X1 .2 E X1 .3 G2.1 G2 . 2 G2 . 3 EX2.1 E X2 .2 E X2 .3 GND Cu-Base － 5 2MBI550VJ-170-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. 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