http://www.fujielectric.com/products/semiconductor/ 2MBI100HB-120-50 IGBT Modules HIGH SPEED IGBT MODULE 1200V / 100A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Soft-switching Application Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols VCES VGES Conditions Ic Continuous Ic pulse 1ms -Ic -Ic pulse Collector Power Dissipation Pc Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso Mounting (*2) Screw torque Terminals (*3) Tc=25°C Tc=80°C Tc=25°C Tc=80°C 1ms 1 device AC : 1min. Maximum ratings 1200 ±20 150 100 300 200 50 100 1040 +150 -40 ~ +125 2500 3.5 3.5 Units V V A W °C VAC Nm Note *1:All terminals should be connected together when isolation test will be done. Note *2:Recommendable Value : Mounting 2.5 to 3.5 Nm (M5) Note *3:Recommendable Value : Terminals 2.5 to 3.5 Nm (M5) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) Cies toff VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 100mA Collector-Emitter saturation voltage Input capacitance Turn-off time VGE = 15V IC = 100A VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V, IC = 100A VGE = ±15V, RG = 3.1Ω Ls = 20nH tf VF (terminal) VF (chip) R lead VGE = 0V IF = 50A Items Symbols Conditions Thermal resistance (1device) Rth(j-c) Contact Thermal resistance (1 device) (*5) Rth(c-f) Forward on voltage Lead resistance, terminal-chip (*4) Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics min. typ. max. 1.0 200 5.7 6.2 6.7 3.30 3.60 4.20 3.10 3.40 4.00 9 0.30 0.60 - 0.05 1.85 2.00 1.70 1.85 1.55 0.20 2.30 2.15 - Units mA nA V V nF µs V mΩ Note *4:Biggest internal terminal resistance among arm. Thermal resistance characteristics IGBT FWD with Thermal Compound Note *5:This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Characteristics min. typ. max. 0.12 0.65 0.05 - Units °C/W 2MBI100HB-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=125oC / chip Collector current vs. Collector-Emitter voltage (typ.) Tj=25oC / chip 250 15V 12V 200 VGE=20V Collector current : Ic [A ] Collector current : Ic [ A ] 250 10V 150 100 8V 50 1 8V 50 2 3 4 5 6 7 Collector-Emitter voltage : VCE [ V ] 0 8 0 1 2 3 4 5 6 7 Collector-Emitter voltage : VCE [ V ] 8 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25oC / chip VGE=15V / chip 250 10 Collector-Emitter voltage : VCE [ V ] Tj=25oC Tj=125oC 200 150 100 50 0 0 1 2 3 4 5 6 7 Collector-Emitter voltage : VCE [ V ] 8 6 Ic=200A 4 Ic=100A Ic=50A 2 0 8 5 10 15 20 Gate-Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f=1MHz, Tj=25 oC Collector- Emitter voltage : VCE[ 200V/div ] Gate-Emitter voltage : VGE [ 5V/div ] Cies 10.0 1.0 Coes Cres 0.1 0 10 20 Collector-Emitter voltage : VCE [ V ] 25 Dynamic Gate charge (typ.) Vcc=600V, Ic=100A, Tj=25oC 100.0 Capacitance : Cies, Coes, Cres [ nF ] 10V 100 Collector current vs. Collector-Emitter voltage (typ.) Collector current : Ic [ A ] VGE=20V 150 0 0 15V 12V 200 VCE 0 0 30 2 VGE 100 200 Gate charge : Qg [ nC ] 300 2MBI100HB-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=3.1Ω,Tj=25ºC Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=3.1Ω,Tj=125ºC 1000 Switching time : toff, tf [ nsec ] Switching time : toff, tf [ nsec ] 1000 toff 100 tf 10 0 100 200 Collector current : Ic [ A ] toff 100 tf 10 300 0 1000 10 toff Switching loss : Eoff [ mJ/pulse ] Switching time : toff, tf [ nsec ] 300 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=3.1Ω Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V,Tj=25ºC 100 tf 10 1 10 Gate resistance : RG [ Ω ] Eoff(125oC) Eoff(25oC) 5 0 100 0 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V,Tj=125ºC 50 100 150 200 Collector current : Ic [ A ] 250 Reverse bias safe operating area (max.) +VGE=15V, -VGE <= 15V, RG >= 3.1Ω,Tj <= 125ºC 20 300 10 Collector current : Ic [ A ] Switching loss : Eoff [ mJ/pulse ] 100 200 Collector current : Ic [ A ] Eoff 0 200 100 0 1 10 Gate resistance : RG [ Ω ] 100 0 3 400 800 1200 Collector-Emitter voltage : VCE [ V ] 1600 2MBI100HB-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Forward current vs. Forward on voltage (typ.) chip Transient thermal resistance (max.) 1.000 Tj=25ºC 100 Thermal resistance : Rth(j-c) [ ºC/W ] Forward current : IF [ A ] 125 Tj=125ºC 75 50 25 0 0 1 2 3 Forward on voltage : VF [ V ] FWD 0.100 0.010 0.001 0.001 4 4 IGBT 0.010 0.100 Pulse width : PW [ sec ] 1.000 2MBI100HB-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Equivalent Circuit Schematic C1 G1 E1 C2E1 G2 E2 E2 5 2MBI100HB-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. 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