FUJI 1MBI300U2H-060L-50

http://www.fujielectric.com/products/semiconductor/
1MBI300U2H-060L-50
IGBT Modules
IGBT MODULE (U series)
600V / 300A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter DB for Motor Drive
AC and DC Servo Drive Amplifier (DB)
Active PFC
Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector Power Dissipation
Forword current for FWD
Junction temperature
Storage temperature
Isolation oltage between terminal and copper base *1
Screw Torque
Symbols
VCES
VGES
Conditions
IC
Continuous
Icp
1ms
-IC
Continuous
-IC pluse
1ms
PC
1 device
IF
Continuous
IF pulse
1ms
Tj
Tstg
Viso
Mounting *2
Terminals *2
Note *1: All terminals should be connected together when isolation test will be done.
Note *2:Recommendable Value : Mounting 2.5~3.5 Nm (M5)
Terminals 3.5~4.5 Nm (M6)
1
AC : 1min.
TC =25°C
TC =80°C
TC =25°C
TC =80°C
TC =25°C
TC =80°C
TC =25°C
TC =80°C
TC =25°C
TC =80°C
TC =25°C
TC =80°C
Maximum ratings
600
±20
300
270
600
600
300
200
600
600
1000
400
260
800
800
150
-40~ +125
2500
3.5
4.5
Units
V
V
A
°C
VAC
Nm
1MBI300U2H-060L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Items
Conditions
Zero gate voltage collector current
ICES
VGE = 0V
VCE = 600V
-
-
2.00
mA
Gate-Emitter leakage current
IGES
VCE = 0V
VGE=±20V
-
-
400
nA
Gate-Emitter threshold voltage
VGE(th)
VCE = 20V
IC = 300mA
6.2
6.7
7.7
V
-
2.05
2.30
1.80
2.05
23.0
0.40
0.22
0.16
0.48
0.07
1.85
1.90
1.60
1.65
1.85
1.90
1.60
1.65
0.53
2.45
1.20
0.60
1.20
0.45
2.30
0.35
2.35
0.35
-
Inverter
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
FWD
Characteristics
min.
typ.
max.
Symbols
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip *3
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
VF
(terminal)
VF
(chip)
trr
R lead
VGE=15V
IC = 300A
Tj = 25°C
Tj =125°C
Tj = 25°C
Tj =125°C
VCE=10V,VGE=0V,f=1MHz
VCC = 300V
IC = 300A
VGE = ±15V
RG = 9.1 Ω
VGE=0V
IF = 300A
Tj = 25°C
Tj =125°C
Tj = 25°C
Tj =125°C
IF = 300A
VGE=0V
IF = 400A
IF = 400A
Tj = 25°C
Tj =125°C
Tj = 25°C
Tj =125°C
Units
V
nF
μs
V
μs
V
μs
mΩ
Note *3: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Symbols
Thermal resistance (1device)
Rth(j-c)
Contact Thermal resistance (1device) *4
Rth(c-f)
Conditions
IGBT
Inverse Diode
FWD
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics
min.
typ.
max.
0.125
0.23
0.16
0.025
-
Units
°C/W
1MBI300U2H-060L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C / chip
750
VGE=20V 15V
600
Collector current : IC [A ]
Collector current : IC [ A ]
750
12V
10V
450
300
150
VGE=20V 15V
600
12V
10V
450
300
8V
150
8V
0
0
0
1
2
3
4
0
5
Collector-Emitter voltage : VCE [ V ]
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
10
Tj=25°C
600
Collector-Emitter voltage : VCE [ V ]
750
Collector current : IC [ A ]
1
Tj=125°C
450
300
150
0
8
6
4
IC=600A
IC=300A
IC=150A
2
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
VCC=300V, IC=300A, Tj=25oC
VGE=0V, f=1MHz, Tj=25°C
Collector- Emitter voltage : VCE[ 100V/div ]
Gate-Emitter voltage : VGE [ 5V/div ]
Capacitance : Cies, Coes, Cres [ nF ]
100.0
Cies
10.0
Cres
Coes
1.0
0.1
0
10
20
30
Collector-Emitter voltage : VCE [ V ]
VGE
VCE
0
500
1000
Gate charge : Qg [ nC ]
3
1500
1MBI300U2H-060L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
VCC=300V, VGE=±15V, RG=9.1Ω, Tj=25oC
Switching time vs. Collector current (typ.)
VCC=300V, VGE=±15V, RG=9.1Ω, Tj=125oC
10000
1000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
toff
ton
tr
tf
100
ton
1000
toff
tr
100
tf
10
10
0
150
300
450
0
600
Collector current : IC [ A ]
25
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
ton
toff
1000
450
600
Switching loss vs. Collector current (typ.)
VCC=300V, VGE=±15V, RG=9.1Ω
10000
tr
tf
100
10
10.0
Eoff(125°C)
Eon(125°C)
20
Eoff(25°C)
15
Eon(25°C)
10
5
Err(125°C)
Err(25°C)
0
0
100.0
150
Gate resistance : RG [ Ω ]
40
300
450
600
Collector current : IC [ A ]
Switching loss vs. Gate resistance (typ.)
VCC=300V, IC=300A, VGE=±15V, Tj=125oC
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 9.1Ω,Tj <= 125oC
750
Eon
600
30
Collector current : IC [ A ]
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
300
Collector current : IC [ A ]
Switching time vs. Gate resistance (typ.)
VCC=300V, IC=300A, VGE=±15V, Tj=25oC
1.0
150
Eoff
20
10
Err
0
1.0
10.0
450
300
150
0
100.0
0
200
400
600
Collector-Emitter voltage : VCE [ V ]
Gate resistance : RG [ Ω ]
4
800
1MBI300U2H-060L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Forward current vs. Forward on voltage for Inverse Diode (typ.)
chip
1000
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
750
600
Forward current : IF [ A ]
Reverse recovery characteristics (typ.)
VCC=300V, VGE=±15V, RG=9.1Ω
Tj=25°C
450
Tj=125°C
300
150
trr (125°C)
Irr (125°C)
Irr (25°C)
trr (25°C)
100
10
0
0
1
2
0
3
Forward on voltage : VF [ V ]
300
450
600
Forward current : IF [ A ]
Forward current vs. Forward on voltage for FWD (typ.)
Transient thermal resistance (max.)
1000
Thermal resistance : Rth (j-c) [ oC/W ]
1.000
800
Forward current : IF [ A ]
150
Tj=25°C
600
Tj=125°C
400
200
FWD
Inverse Diode
0.100
IGBT
0.010
0.001
0
0
1
2
0.001
3
Forward on voltage : VF [ V ]
0.010
0.100
Pulse width : Pw [ sec ]
5
1.000
1MBI300U2H-060L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Equivalent Circuit Schematic
Inverse
FWD
C1
E2
NC
G1
E1
E1C2
G2
6
E2
1MBI300U2H-060L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment • Electrical home appliances
• Personal equipment • Industrial robots etc.
5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Trunk communications equipment
• Traffic-signal control equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices
• Safety devices
• Medical equipment
6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).
• Space equipment
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• Submarine repeater equipment
7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.
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