http://www.fujielectric.com/products/semiconductor/ 1MBI300U2H-060L-50 IGBT Modules IGBT MODULE (U series) 600V / 300A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC =25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Forword current for FWD Junction temperature Storage temperature Isolation oltage between terminal and copper base *1 Screw Torque Symbols VCES VGES Conditions IC Continuous Icp 1ms -IC Continuous -IC pluse 1ms PC 1 device IF Continuous IF pulse 1ms Tj Tstg Viso Mounting *2 Terminals *2 Note *1: All terminals should be connected together when isolation test will be done. Note *2:Recommendable Value : Mounting 2.5~3.5 Nm (M5) Terminals 3.5~4.5 Nm (M6) 1 AC : 1min. TC =25°C TC =80°C TC =25°C TC =80°C TC =25°C TC =80°C TC =25°C TC =80°C TC =25°C TC =80°C TC =25°C TC =80°C Maximum ratings 600 ±20 300 270 600 600 300 200 600 600 1000 400 260 800 800 150 -40~ +125 2500 3.5 4.5 Units V V A °C VAC Nm 1MBI300U2H-060L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj = 25°C unless otherwise specified) Items Conditions Zero gate voltage collector current ICES VGE = 0V VCE = 600V - - 2.00 mA Gate-Emitter leakage current IGES VCE = 0V VGE=±20V - - 400 nA Gate-Emitter threshold voltage VGE(th) VCE = 20V IC = 300mA 6.2 6.7 7.7 V - 2.05 2.30 1.80 2.05 23.0 0.40 0.22 0.16 0.48 0.07 1.85 1.90 1.60 1.65 1.85 1.90 1.60 1.65 0.53 2.45 1.20 0.60 1.20 0.45 2.30 0.35 2.35 0.35 - Inverter Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time FWD Characteristics min. typ. max. Symbols Forward on voltage Reverse recovery time Lead resistance, terminal-chip *3 VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr VF (terminal) VF (chip) trr R lead VGE=15V IC = 300A Tj = 25°C Tj =125°C Tj = 25°C Tj =125°C VCE=10V,VGE=0V,f=1MHz VCC = 300V IC = 300A VGE = ±15V RG = 9.1 Ω VGE=0V IF = 300A Tj = 25°C Tj =125°C Tj = 25°C Tj =125°C IF = 300A VGE=0V IF = 400A IF = 400A Tj = 25°C Tj =125°C Tj = 25°C Tj =125°C Units V nF μs V μs V μs mΩ Note *3: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Symbols Thermal resistance (1device) Rth(j-c) Contact Thermal resistance (1device) *4 Rth(c-f) Conditions IGBT Inverse Diode FWD with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 Characteristics min. typ. max. 0.125 0.23 0.16 0.025 - Units °C/W 1MBI300U2H-060L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj=125°C / chip 750 VGE=20V 15V 600 Collector current : IC [A ] Collector current : IC [ A ] 750 12V 10V 450 300 150 VGE=20V 15V 600 12V 10V 450 300 8V 150 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [ V ] 2 3 4 5 Collector-Emitter voltage : VCE [ V ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 10 Tj=25°C 600 Collector-Emitter voltage : VCE [ V ] 750 Collector current : IC [ A ] 1 Tj=125°C 450 300 150 0 8 6 4 IC=600A IC=300A IC=150A 2 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [ V ] 10 15 20 25 Gate-Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VCC=300V, IC=300A, Tj=25oC VGE=0V, f=1MHz, Tj=25°C Collector- Emitter voltage : VCE[ 100V/div ] Gate-Emitter voltage : VGE [ 5V/div ] Capacitance : Cies, Coes, Cres [ nF ] 100.0 Cies 10.0 Cres Coes 1.0 0.1 0 10 20 30 Collector-Emitter voltage : VCE [ V ] VGE VCE 0 500 1000 Gate charge : Qg [ nC ] 3 1500 1MBI300U2H-060L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) VCC=300V, VGE=±15V, RG=9.1Ω, Tj=25oC Switching time vs. Collector current (typ.) VCC=300V, VGE=±15V, RG=9.1Ω, Tj=125oC 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 toff ton tr tf 100 ton 1000 toff tr 100 tf 10 10 0 150 300 450 0 600 Collector current : IC [ A ] 25 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] ton toff 1000 450 600 Switching loss vs. Collector current (typ.) VCC=300V, VGE=±15V, RG=9.1Ω 10000 tr tf 100 10 10.0 Eoff(125°C) Eon(125°C) 20 Eoff(25°C) 15 Eon(25°C) 10 5 Err(125°C) Err(25°C) 0 0 100.0 150 Gate resistance : RG [ Ω ] 40 300 450 600 Collector current : IC [ A ] Switching loss vs. Gate resistance (typ.) VCC=300V, IC=300A, VGE=±15V, Tj=125oC Reverse bias safe operating area (max.) +VGE=15V, -VGE <= 15V, RG >= 9.1Ω,Tj <= 125oC 750 Eon 600 30 Collector current : IC [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 300 Collector current : IC [ A ] Switching time vs. Gate resistance (typ.) VCC=300V, IC=300A, VGE=±15V, Tj=25oC 1.0 150 Eoff 20 10 Err 0 1.0 10.0 450 300 150 0 100.0 0 200 400 600 Collector-Emitter voltage : VCE [ V ] Gate resistance : RG [ Ω ] 4 800 1MBI300U2H-060L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Forward current vs. Forward on voltage for Inverse Diode (typ.) chip 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 750 600 Forward current : IF [ A ] Reverse recovery characteristics (typ.) VCC=300V, VGE=±15V, RG=9.1Ω Tj=25°C 450 Tj=125°C 300 150 trr (125°C) Irr (125°C) Irr (25°C) trr (25°C) 100 10 0 0 1 2 0 3 Forward on voltage : VF [ V ] 300 450 600 Forward current : IF [ A ] Forward current vs. Forward on voltage for FWD (typ.) Transient thermal resistance (max.) 1000 Thermal resistance : Rth (j-c) [ oC/W ] 1.000 800 Forward current : IF [ A ] 150 Tj=25°C 600 Tj=125°C 400 200 FWD Inverse Diode 0.100 IGBT 0.010 0.001 0 0 1 2 0.001 3 Forward on voltage : VF [ V ] 0.010 0.100 Pulse width : Pw [ sec ] 5 1.000 1MBI300U2H-060L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Equivalent Circuit Schematic Inverse FWD C1 E2 NC G1 E1 E1C2 G2 6 E2 1MBI300U2H-060L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 7