http://www.fujielectric.com/products/semiconductor/ 2MBI200VH-120-50 IGBT Modules IGBT MODULE (V series) 1200V / 200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Conditions Inverter Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Ic Continuous Collector current Ic pulse -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso Mounting (*2) Screw torque Terminals (*3) 1ms Tc=100°C Tc=25°C 1ms 1 device AC : 1min. Maximum ratings 1200 ±20 200 240 400 200 400 1110 175 150 125 -40 ~ +125 2500 6.0 5.0 Units V V A W °C VAC Nm Note *1:All terminals should be connected together during the test. Note *2:Recommendable Value : 3.0-6.0 Nm (M5 or M6) (c) Note *3:Recommendable Value : 2.5-5.0 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Inverter Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Symbols Conditions ICES IGES VGE (th) VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 200mA VCE (sat) (terminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) VGE = 15V IC = 200A VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V IC = 200A VGE = ±15V RG = 2.7Ω Tj = 150°C VGE = 0V IF = 200A trr IF = 200A Items Symbols Conditions Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) Thermal resistance characteristics IGBT FWD with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Characteristics min. typ. max. 2.0 400 6.0 6.5 7.0 1.95 2.40 2.25 2.30 1.75 2.15 2.05 2.10 18 0.60 0.20 0.05 0.80 0.08 1.85 2.35 2.00 1.95 1.70 2.15 1.85 1.80 0.15 Characteristics min. typ. max. 0.135 0.200 0.0250 - Units mA nA V V nF µs V µs Units °C/W 2MBI200VH-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 500 500 VGE=20V15V VGE= 20V 12V Collector current: Ic [A] Collector current: Ic [A] 400 300 10V 200 100 15V 400 12V 300 10V 200 100 8V 8V 0 0 0 1 2 3 4 0 5 1 Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip 500 10 400 Collector-Emitter Voltage: VCE [V] Tj=25°C 125°C Collector Current: Ic [A] 3 Collector-Emitter voltage: VCE [V] Collector-Emitter voltage: VCE [V] 150°C 300 200 100 8 6 4 Ic=400A Ic=200A Ic=100A 2 0 0 0 1 2 3 4 Collector-Emitter Voltage: VCE [V] 5 5 Collector-Emitter voltage: VCE [200V/div] Gate-Emitter voltage: VGE [5V/div] Cies 10 Cres 1 Coes 0.1 5 10 15 20 25 15 20 25 Dynamic Gate Charge (typ.) Vcc=600V, Ic=200A, Tj= 25°C 100 0 10 Gate-Emitter Voltage: VGE [V] Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C Gate Capacitance: Cies, Coes, Cres [nF] 2 30 VGE VCE 0 Collector-Emitter voltage: VCE [V] 500 1000 1500 Gate charge: Qg [nC] 2 2000 2500 2MBI200VH-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=2.7Ω, Tj=125°C Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=2.7Ω, Tj=150°C 10000 1000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] 10000 toff ton tr 100 tf 10 0 100 200 300 400 1000 toff ton tr 100 tf 10 500 0 100 Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] Switching time: ton, tr, toff, tf [nsec] toff ton tr 100 tf 10 10 100 60 Tj=125oC Tj=150oC 500 Eoff 40 Eon 20 Err 0 0 100 200 300 400 500 Collector current: Ic [A] Gate resistance: RG [Ω] Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, RG=2.7Ω, Tj=150°C Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj=125°C, 150°C 500 100 Tj=125oC Tj=150oC Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] 400 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=2.7Ω, Tj=125°C, 150°C 10000 1 300 Collector current: Ic [A] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj=125°C 1000 200 Eon 50 Eoff 400 300 200 100 Err 0 0 1 10 0 100 200 400 600 800 1000 1200 1400 Collector-Emitter voltage: VCE [V] Gate resistance: RG [Ω] 3 2MBI200VH-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, RG=2.7Ω, Tj=125°C Forward Current vs. Forward Voltage (typ.) chip 10000 400 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Forward current: IF [A] 500 Tj=25°C 300 200 125°C 100 150°C 1000 Irr 0 10 0 1 2 3 0 Forward on voltage: VF [V] 100 200 300 400 500 Forward current: IF [A] Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, RG=2.7Ω, Tj=150°C Transient Thermal Resistance (max.) 10000 1 Thermal resistanse: Rth(j-c) [°C/W] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] trr 100 1000 Irr trr 100 10 0 100 200 300 400 FWD 0.1 IGBT 0.01 0.001 0.001 500 Forward current: IF [A] 0.01 0.1 Pulse Width : Pw [sec] 4 1 2MBI200VH-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Equivalent Circuit Schematic C1 G1 E1 C2E1 G2 E2 E2 5 2MBI200VH-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 6