isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2929 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 400 V Emitter-Base voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -45~150 ℃ VEBO B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2929 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 0.3 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 0.9 V ICBO Collector Cutoff Current VCB= 450V; IE=0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 0.1 mA hFE DC Current Gain IC= 0.5A; VCE= 5V B B 20 TYP. MAX UNIT 50 Switching times ton Turn-on Time tstg Storage Time tf IC= 3A, IB1= -IB2= 0.6A RL= 20Ω;PW=20μs Duty Cycle≤2% Fall Time isc Website：www.iscsemi.cn 2 1.5 μs 2.0 μs 0.8 μs