isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3969 DESCRIPTION ·Low Collector Saturation Voltage ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V (Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 400 V 400 V 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A Collector Power Dissipation @ TC=25℃ 20 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 2 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3969 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0A ; IB1= 0.1A, L= 1mH 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 400 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.5 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 10 μA IEBO Emitter Cutoff Current 10 μA hFE DC Current Gain fT COB B n c . i m e B s c s i . w w w VEB= 7V; IC= 0 IC= 0.1A ; VCE= 5V 25 50 Current-Gain—Bandwidth Product IE= -0.1A ; VCE= 10V 10 MHz Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 30 pF Switching times ton Turn-on Time tstg Storage Time tf B IC= 0.8A ; IB1= -IB2= 0.08A; RL= 250Ω;VCC≈ 200V Fall Time isc Website：www.iscsemi.cn 2 1.0 μs 2.5 μs 1.0 μs