isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV22 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 1.0V (Max.) @IC= 10A ·High Switching Speed ·High DC Current Gain: hFE= 20(Min.) @IC= 10A APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCER Collector-Emitter Voltage RBE= 100Ω 290 V VCEX Collector-Emitter Voltage VBE= -1.5V 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 40 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 8 A PC Collector Power Dissipation @TC=25℃ 250 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV22 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A ;IB= 2.5A 1.5 V Base-Emitter Saturation Voltage IC= 40A ;IB= 4A 1.5 V ICEO Collector Cutoff Current VCE= 200V; IB= 0 3.0 mA ICEX Collector Cutoff Current VCE= 300V;VBE= -1.5V VCE= 300V;VBE= -1.5V;TC=125℃ 3.0 12.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 10A ; VCE= 4V 20 hFE-2 DC Current Gain IC= 20A ; VCE= 4V 10 Current-Gain—Bandwidth Product IC= 2A;VCE= 15V, ftest= 4MHz 8 VBE(sat) fT CONDITIONS MIN TYP. MAX UNIT 250 V 7 V 60 MHz Switching Times ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 20A; IB1=-IB2= 2.5A; VCC= 100V; RC= 5Ω 0.8 μs 2.0 μs 0.35 μs