Product Specification www.jmnic.com 2SC3866 Silicon NPN Power Transistor DESCRIPTION ・High Breakdown Voltage: V(BR)CBO= 900V(Min) ・High Switching Speed ・High Reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 3 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.5 ℃/W Product Specification www.jmnic.com 2SC3866 Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.5 V ICBO Collector Cutoff Current VCB= 900V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 1.0 mA hFE DC Current Gain IC= 1A; VCE= 5V 1.0 μs 4.0 μs 0.8 μs 10 Switching times ton Turn-on Time tstg Storage Time tf IC= 2A , IB1= 0.4A; IB2= -0.8A RL=150Ω; PW=20μs; Duty≤2% Fall Time 2