FNB41560 / FNB41560B2 Motion SPM® 45 Series Features General Description • UL Certified No. E209204 FNB41560 Is A Motion SPM 45 Series that Fairchild Has Newly Developed to Provide A Very Compact and High Performance Inverter Solution for AC Motor Drives in Low - Power Applications Such as Air Conditioners and Refrigerators. It Combines Low - Loss Short - Circuit Rated IGBTs and Optimized Gate Drivers in A Fully Isolated Package to Deliver A Simple and Robust Design. The System Reliability Is Further Enhanced by The Built - In NTC for Temperature Monitoring, Integrated Under Voltage Lock - Out Function for Both High and Low Side, and An Over - Current Protection Input. Three Separate Open - Emitter Pins for Low Side IGBTs Make Three Leg Current Sensing Possible. Built - In Bootstrap Diodes and Dedicated VS Pins Make PCB Layout Easy. • 600 V, 15 A 3 - Phase IGBT Inverter Including Control ICs for Gate Drive and Protections • Easy PCB Layout Thanks to The Built - In Bootstrap Diodes and The Dedicated Vs Pins • Three Separate Open - Emitter Pins from Low Side IGBTs for Three Leg Current Sensing • Single - Grounded Power Supply with Bootstrap Operations • Built - In NTC Thermistor for Over Temperature Monitoring • Isolation Rating of 2000 Vrms / min. Applications • Motion Control - Home Appliance / Industrial Motor Related Resources AN - 9070 Motion SPM® 45 Series Users Guide AN - 9071 Motion SPM® 45 Series Thermal Performance Information AN - 9072 Motion SPM® 45 Series Mounting Guidance RD - 344 Reference Design (Three Shunt Solution) RD - 345 Reference Design (One Shunt Solution) Figure 1. Package Overview Package Marking and Ordering Information Device Marking Device Package Packing Type Reel Size Tape Width Quantity FNB41560 FNB41560 SPMAA-A26 RAIL - - 12 FNB41560B2 FNB41560B2 SPMAA-C26 RAIL - - 12 ©2011 Fairchild Semiconductor Corporation FNB41560 / FNB41560B2 Rev. C1 1 www.fairchildsemi.com FNB41560 / FNB41560B2 Motion SPM® 45 Series April 2013 FNB41560 / FNB41560B2 Motion SPM® 45 Series Integrated Power Functions • 600 V - 15 A IGBT inverter for three - phase DC / AC power conversion (Please refer to Figure 3) Integrated Drive, Protection and System Control Functions • For inverter high - side IGBTs: Gate drive circuit, High voltage isolated high - speed level shifting Control circuit under - voltage (UV) protection • For inverter low - side IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under - voltage (UV) protection • Fault signaling: Corresponding to UV (low - side supply) and SC faults • Input interface: Active - high interface, can work with 3.3 / 5 V logic Pin Configuration Top View VB(U) (26) V TH(1) VS(U)(25) R TH(2) VB(V)(24) V S(V)(23) P(3) V B(W)(22) VS(W)(21) U(4) IN (UH) (20) Case Temperature (TC) Detecting Point IN(VH)(19) V(5) IN(WH)(18) VCC(H) (17) VCC(L)(16) W(6) COM(15) IN (UL)(14) IN (VL)(13) N U(7) IN (WL) (12) N V(8) VFO (11) NW(9) CSC(10) Figure 2. ©2011 Fairchild Semiconductor Corporation FNB41560 / FNB41560B2 Rev. C1 2 www.fairchildsemi.com FNB41560 / FNB41560B2 Motion SPM® 45 Series Pin Descriptions Pin Number Pin Name 1 V TH Pin Description Thermistor Bias Voltage 2 RTH 3 P Series Resistor for the Use of Thermistor (Temperature Detection) 4 U Output for U Phase 5 V Output for V Phase 6 W Output for W Phase 7 NU Negative DC - Link Input for U Phase Positive DC - Link Input 8 NV Negative DC - Link Input for V Phase 9 NW Negative DC - Link Input for W Phase 10 CSC Capacitor (Low - Pass Filter) for Short - Current Detection Input 11 VFO Fault Output 12 IN(WL) Signal Input for Low - Side W Phase 13 IN (VL) Signal Input for Low - Side V Phase 14 IN(UL) Signal Input for Low - Side U Phase 15 COM Common Supply Ground 16 VCC(L) Low - Side Common Bias Voltage for IC and IGBTs Driving 17 V CC(H) High - Side Common Bias Voltage for IC and IGBTs Driving 18 IN(WH) Signal Input for High - Side W Phase 19 IN (VH) Signal Input for High - Side V Phase 20 IN(UH) Signal Input for High - Side U Phase 21 VS(W) High - Side Bias Voltage Ground for W Phase IGBT Driving 22 VB(W) High - Side Bias Voltage for W Phase IGBT Driving 23 V S(V) High - Side Bias Voltage Ground for V Phase IGBT Driving 24 V B(V) High - Side Bias Voltage for V Phase IGBT Driving 25 VS(U) High - Side Bias Voltage Ground for U Phase IGBT Driving 26 VB(U) High - Side Bias Voltage for U Phase IGBT Driving ©2011 Fairchild Semiconductor Corporation FNB41560 / FNB41560B2 Rev. C1 3 www.fairchildsemi.com FNB41560 / FNB41560B2 Motion SPM® 45 Series Internal Equivalent Circuit and Input/Output Pins VTH (1) Thermister (26) VB(U) (25) VS(U) (24) VB(V) (23) VS(V) (22) VB(W) (21) VS(W) (20) IN(UH) (19) IN(VH) (18) IN(WH) (17) VCC(H) (16) VCC(L) (15) COM (14) IN(UL) (13) IN(VL) (12) IN(WL) (11) VFO (10) CSC RTH (2) P (3) UVB UVS VVB OUT(UH) UVS U(4) VVS WVB WVS IN(UH) OUT(VH) VVS V (5) IN(VH) IN(WH) VCC OUT(WH) COM WVS W(6) VCC OUT(UL) COM NU (7) IN(UL) IN(VL) IN(WL) OUT(VL) NV (8) VFO C(SC) OUT(WL) NW (9) Note: 1) Inverter high - side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT. 2) Inverter low - side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT. It has gate drive and protection functions. 3) Inverter power side is composed of four inverter dc - link input terminals and three inverter output terminals. Figure 3. ©2011 Fairchild Semiconductor Corporation FNB41560 / FNB41560B2 Rev. C1 4 www.fairchildsemi.com Unless Otherwise Specified) Inverter Part Symbol VPN V PN(Surge) Parameter Conditions Rating Unit Supply Voltage Applied between P - NU, NV, NW 450 V Supply Voltage (Surge) Applied between P - NU, NV, NW 500 V 600 V VCES Collector - Emitter Voltage IO,25 Output Phase Current TC = 25°C, TJ ＜ 150°C (Note 1) 15 A IO,100 Output Phase Current TC = 100°C, TJ ＜ 150°C (Note 1) 7.5 A Ipk Output Peak Phase Current TC = 25°C, TJ ＜ 150°C, Under 1ms Pulse Width 22 A PC Collector Dissipation TC = 25°C per One Chip 34 W TJ Operating Junction Temperature (Note 2) - 40 ~ 150 °C Rating Unit Note: 1. Sinusoidal PWM at VPN = 300 V, VCC = VBS = 15 V, TJ ＜ 150℃, F SW = 20 kHz, MI = 0.9, PF = 0.8 2. The maximum junction temperature rating of the power chips integrated within the Motion SPM 45 product is 150°C. Control Part Symbol Parameter Conditions VCC Control Supply Voltage Applied between V CC(H), V CC(L) - COM 20 V VBS High - Side Control Bias Voltage Applied between VB(U) - VS(U), V B(V) - VS(V), VB(W) - VS(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), - 0.3 ~ VCC + 0.3 IN(VL), IN(WL) - COM V VFO Fault Output Supply Voltage Applied between V FO - COM - 0.3 ~ VCC + 0.3 V IFO Fault Output Current Sink Current at VFO pin VSC Current Sensing Input Voltage Applied between CSC - COM 1 mA - 0.3 ~ VCC + 0.3 V Rating Unit 600 V Bootstrap Diode Part Symbol Parameter VRRM Maximum Repetitive Reverse Voltage Conditions IF Forward Current TC = 25°C, TJ ＜ 150°C 0.50 A IFP Forward Current (Peak) TC = 25°C, TJ ＜ 150°C, Under 1ms Pulse Width 1.50 A TJ Operating Junction Temperature - 40 ~ 150 °C Rating Unit 400 V - 40 ~ 125 °C 2000 V rms Typ. Max. Unit Total System Symbol VPN(PROT) Parameter Self Protection Supply Voltage Limit (Short Circuit Protection Capability) TSTG Storage Temperature V ISO Isolation Voltage Conditions VCC = V BS = 13.5 ~ 16.5 V TJ = 150°C, Non - repetitive, less than 2 ms 60 Hz, Sinusoidal, AC 1 minute, Connection pins to heat sink plate Thermal Resistance Symbol Parameter Conditions Min. Rth(j-c)Q Junction to Case Thermal Resistance Inverter IGBT part (per 1 / 6 module) - - 3.6 °C / W Rth(j-c)F Inverter FWD part (per 1 / 6 module) - - 4.8 °C / W Note: 3. For the measurement point of case temperature (TC), please refer to Figure 2. ©2011 Fairchild Semiconductor Corporation FNB41560 / FNB41560B2 Rev. C1 5 www.fairchildsemi.com FNB41560 / FNB41560B2 Motion SPM® 45 Series Absolute Maximum Ratings (TJ = 25°C, Inverter Part Symbol VCE(SAT) VF HS tON Parameter Conditions Min. Typ. Max. Unit Collector - Emitter Saturation VCC = VBS = 15 V Voltage VIN = 5 V IC = 7.5 A, TJ = 25°C - 1.6 2.1 V FWD Forward Voltage VIN = 0 V IF = 7.5 A, TJ = 25°C - 1.7 2.2 V Switching Times VPN = 300 V, VCC = V BS = 15 V, IC = 7.5 A TJ = 25°C VIN = 0 V « 5 V, Inductive load (Note 4) 0.40 0.70 1.20 ms - 0.15 0.40 ms - 0.65 1.15 ms - 0.15 0.40 ms tC(ON) tOFF tC(OFF) - 0.15 - ms 0.40 0.70 1.20 ms - 0.15 0.40 ms - 0.65 1.15 ms tC(OFF) - 0.15 0.40 ms trr - 0.10 - ms - - 1 mA trr LS tON VPN = 300 V, VCC = V BS = 15 V, IC = 7.5 A TJ = 25°C VIN = 0 V « 5 V, Inductive load (Note 4) tC(ON) tOFF ICES Collector - Emitter Leakage VCE = VCES Current Note: 4. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. 100% IC 100% IC t rr V CE IC IC V CE V IN V IN t ON 10% IC V IN(ON ) tO FF tC(O N) 90% IC t C(OFF) V IN (OF F) 10% V C E 10% V C E 10% I C (b) turn-off (a) turn-on Figure 4. Switching Time Definition ©2011 Fairchild Semiconductor Corporation FNB41560 / FNB41560B2 Rev. C1 6 www.fairchildsemi.com FNB41560 / FNB41560B2 Motion SPM® 45 Series Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Inductive Load, VPN=300V, VCC=15V, TJ=25℃ 500 Inductive Load, VPN=300V, VCC=15V, TJ=150℃ 500 IGBT Turn-ON, Eon SWITCHING LOSS, ESW [uJ] SWITCHING LOSS, ESW [uJ] IGBT Turn-ON, Eon IGBT Turn-OFF, Eoff 400 FRD Turn-OFF, Erec 300 200 100 0 0 1 2 3 4 5 6 7 IGBT Turn-OFF, Eoff 400 FRD Turn-OFF, Erec 300 200 100 0 8 0 1 COLLECTOR CURRENT, Ic [AMPERES] 2 3 4 5 6 7 8 COLLECTOR CURRENT, Ic [AMPERES] Figure 5. Switching Loss Characteristics Control Part Symbol Parameter Min. Typ. Max. Unit IQCCH Quiescent V CC Supply Current VCC(H) = 15 V, IN(UH,VH,WH) = 0 V V CC(H) - COM - - 0.10 mA VCC(L) = 15 V, IN(UL,VL, WL) = 0 V V CC(L) - COM - - 2.65 mA Operating VCC Supply Current VCC(H) = 15 V, fPWM = 20 kHz, duty V CC(H) - COM = 50%, applied to one PWM signal input for high - side - - 0.15 mA VCC(L) = 15 V, fPWM = 20 kHz, duty V CC(L) - COM = 50%, applied to one PWM signal input for low - side - - 3.65 mA IQCCL IPCCH IPCCL Conditions IQBS Quiescent V BS Supply Current VBS = 15 V, IN(UH, VH, WH) = 0 V V B(U) - VS(U), VB(V) V S(V), V B(W) - VS(W) - - 0.30 mA IPBS Operating VBS Supply Current VCC = V BS = 15 V, fPWM = 20 kHz, V B(U) - VS(U), VB(V) duty = 50%, applied to one PWM V S(V), V B(W) - VS(W) signal input for high-side - - 2.00 mA VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 10 kW to 5 V Pull - up 4.5 - - V VSC = 1 V, VFO Circuit: 10 kW to 5 V Pull - up - - 0.5 V VCC = 15 V (Note 5) 0.45 0.5 0.55 V Detection level 10.5 - 13.0 V VFOL VSC(ref) UVCCD UVCCR UV BSD Short Circuit Trip Level Supply Circuit Under - Voltage Protection UV BSR tFOD Fault - Out Pulse Width VIN(ON) ON Threshold Voltage VIN(OFF) OFF Threshold Voltage RTH Resistance of Thermister Reset level 11.0 - 13.5 V Detection level 10.0 - 12.5 V Reset level 10.5 - 13.0 V 30 - - ms - - 2.6 V 0.8 - - V Applied between IN(UH), IN (VH), IN (WH), IN(UL), IN(VL), IN(WL) - COM @TTH = 25°C, (Note 6) - 47 - kW @TTH = 100°C - 2.9 - kW Note: 5. Short - circuit current protection is functioning only at the low - sides. 6. TTH is the temperature of thermister itselt. To know case temperature (TC), please make the experiment considering your application. ©2011 Fairchild Semiconductor Corporation FNB41560 / FNB41560B2 Rev. C1 7 www.fairchildsemi.com FNB41560 / FNB41560B2 Motion SPM® 45 Series Switching Loss (Typical) 550 R-T Curve in 50℃ ~ 125℃ 500 20 450 16 Resistance[kW] Resistance[kW] FNB41560 / FNB41560B2 Motion SPM® 45 Series R-T Curve 600 400 350 300 250 200 12 8 4 0 50 60 70 150 80 90 100 110 120 Temperature [℃ ] 100 50 0 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 Temperature TTH[℃ ] Figure. 6. R-T Curve of The Built-in Thermistor Bootstrap Diode Part Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward Voltage IF = 0.1 A, TC = 25°C - 2.5 - V trr Reverse Recovery Time IF = 0.1 A, TC = 25°C - 80 - ns Built in Bootstrap Diode VF-IF Characteristic 1.0 0.9 0.8 0.7 IF [A] 0.6 0.5 0.4 0.3 0.2 0.1 0.0 TC=25℃ 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VF [V] Note: 7. Built in bootstrap diode includes around 15 Ω resistance characteristic. Figure 7. Built in Bootstrap Diode Characteristic ©2011 Fairchild Semiconductor Corporation FNB41560 / FNB41560B2 Rev. C1 8 www.fairchildsemi.com Symbol V PN Parameter Value Conditions Supply Voltage Applied between P - NU , NV, N W Min. Typ. Max. - 300 400 Unit V VCC Control Supply Voltage Applied between V CC(H), VCC(L) - COM 13.5 15 16.5 V VBS High - Side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), V B(W) VS(W) 13.0 15 18.5 V -1 - 1 V / ms dV CC / dt, Control Supply Variation dV BS / dt tdead Blanking Time for Preventing Arm - Short For each input signal 1.5 - - ms fPWM PWM Input Signal - 40°C ＜ TJ ＜ 150°C - - 20 kHz V SEN Voltage for Current Sensing Applied between N U, NV, N W - COM (Including surge voltage) -4 4 V (Note 8) 0.5 - - ms 0.5 - - PWIN(ON) Minimun Input Pulse P WIN(OFF) Width Note: 8. This product might not make response if input pulse width is less than the recommanded value. Allowable Maximum Output Current Allowable Output Current, IOrms [Arms] 13 12 11 fSW=5kHz 10 9 8 7 6 5 fSW=15kHz VDC=300V, VCC=VBS=15V 4 TJ ＜ 150℃ , TC ≤ 125℃ 3 M.I.=0.9, P.F.=0.8 Sinusoidal PWM 2 1 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Case Temperature, TC [℃] Note: 9. This allowable output current value is the reference data for the safe operation of this product. The allowable output current value may be different from the actual application. Figure 8. Allowable Maximum Output Current ©2011 Fairchild Semiconductor Corporation FNB41560 / FNB41560B2 Rev. C1 9 www.fairchildsemi.com FNB41560 / FNB41560B2 Motion SPM® 45 Series Recommended Operating Conditions Parameter Device Flatness Mounting Torque Limits Conditions Note Figure 9 Min. Typ. Max. 0 - + 120 Unit mm Mounting Screw: - M3 Recommended 0.7 N • m 0.6 0.7 0.8 N•m Note Figure 10 Recommended 7.1 kg • cm 6.2 7.1 8.1 kg • cm - 11 - g Weight Figure 9. Flatness Measurement Position Pre - Screwing : 1→2 2 Final Screwing : 2→1 1 Note: 10. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat - sink destruction. 11. Avoid one side tightening stress. Figure 10 shows the recommended torque order for mounting screws. Uneven mounting can cause the ceramic substrate of the Motion SPM 45 product to be damaged. The Pre - Screwing torque is set to 20 ~ 30% of maximum torque rating. Figure 10. Mounting Screws Torque Order ©2011 Fairchild Semiconductor Corporation FNB41560 / FNB41560B2 Rev. C1 10 www.fairchildsemi.com FNB41560 / FNB41560B2 Motion SPM® 45 Series Mechanical Characteristics and Ratings Input Signal Protection Circuit State RESET SET RESET UVCCR a1 Control Supply Voltage a6 UVCCD a3 a2 a7 a4 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UVCCR ). a7 : Normal operation: IGBT ON and carrying current. Figure 11. Under - Voltage Protection (Low - Side) Input Signal Protection Circuit State RESET SET RESET UVBSR Control Supply Voltage b1 UVBSD b5 b3 b6 b2 b4 Output Current High-level (no fault output) Fault Output Signal b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under voltage reset (UVBSR ) b6 : Normal operation: IGBT ON and carrying current Figure 12. Under - Voltage Protection (High - Side) ©2011 Fairchild Semiconductor Corporation FNB41560 / FNB41560B2 Rev. C1 11 www.fairchildsemi.com FNB41560 / FNB41560B2 Motion SPM® 45 Series Time Charts of SPMs Protective Function c6 Protection Circuit state SET Internal IGBT Gate-Emitter Voltage c3 FNB41560 / FNB41560B2 Motion SPM® 45 Series Lower arms control input c7 RESET c4 c2 SC c1 c8 Output Current SC Reference Voltage Sensing Voltage of the shunt resistance Fault Output Signal c5 CR circuit time constant delay (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Input “L” : IGBT OFF state. c6 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. c7 : IGBT OFF state Figure 13. Short - Circuit Current Protection (Low - Side Operation only) Input/Output Interface Circuit 5V-Line (MCU or Control power) SPM R PF=10kΩ IN(UH) , IN (VH) , IN(W H) IN (UL) , IN (VL) , IN(WL) MCU VFO COM Note: 1) RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The input signal section of the Motion SPM45 product integrates 5 kW (typ.) pull - down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2) The logic input is compatible with standard CMOS outputs. Figure 14. Recommended CPU I/O Interface Circuit ©2011 Fairchild Semiconductor Corporation FNB41560 / FNB41560B2 Rev. C1 12 www.fairchildsemi.com CBS CBSC RS (25) VS(U) (20) IN(UH) Gating UH VS(U) CBSC CBS Gating VH VS(V) IN(VH) CBSC M C U RS 15V line CPS CPS CPS (17) VCC(H) CSPC15 CSP15 VS(W) IN(WH) VS(W) LVIC OUT(UL) NU (7) CSPC05 CSP05 (11) VFO Fault Gating VL Gating WL W (6) VCC RPF RS Gating UL VDC COM 5V line CBPF CDCS OUT(WH) VCC (15) COM (16) VCC(L) M V (5) VB(W) (21) VS(W) (18) IN(WH) Gating WH OUT(VH) VS(V) (22) VB(W) CBS U (4) VS(U) VB(V) (23) VS(V) (19) IN(VH) OUT(UH) IN(UH) (24) VB(V) RS P (3) VB(U) RSU VFO CPF RS (14) IN(UL) RS (13) IN(VL) RS (12) IN(WL) CSC (10) CSC CPS CPS CPS RF RTH Input Signal for Short-Circuit Protection OUT(VL) IN(UL) NV (8) RSV IN(VL) IN(WL) COM OUT(WL) CSC NW (9) RSW (1) VTH (2) RTH THERMISTOR Temp. Monitoring U-Phase Current V-Phase Current W-Phase Current Note: 1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2 - 3 cm) 2) By virtue of integrating an application specific type HVIC inside the Motion SPM 45 product, direct coupling to CPU terminals without any opto - coupler or transformer isolation is possible. 3) VFO output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA. Please refer to Figure 14. 4) CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended. 5) Input signal is High - Active type. There is a 5 kW resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns. (Recommended RS = 100 Ω , CPS = 1 nF) 6) To prevent errors of the protection function, the wiring around RF and C SC should be as short as possible. 7) In the short - circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2 ms. 8) Each capacitor should be mounted as close to the pins of the SPM as possible. 9) To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high frequency non - inductive capacitor of around 0.1 ~ 0.22 mF between the P & GND pins is recommended. 10) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 11) The zener diode should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals. (Recommanded zener diode = 22 V / 1 W) 12) Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1 ~ 0.2 mF R - category ceramic capacitors with good temperature and frequency characteristics in CBSC. 13) For the detailed information, please refer to the AN - 9070, AN - 9071, AN - 9072, RD - 344, and RD - 345. Figure 15. Typical Application Circuit ©2011 Fairchild Semiconductor Corporation FNB41560 / FNB41560B2 Rev. C1 13 www.fairchildsemi.com FNB41560 / FNB41560B2 Motion SPM® 45 Series HVIC (26) VB(U) FNB41560 / FNB41560B2 Motion SPM® 45 Series Detailed Package Outline Drawings(FNB41560) ©2011 Fairchild Semiconductor Corporation FNB41560 / FNB41560B2 Rev. C1 14 www.fairchildsemi.com FNB41560 / FNB41560B2 Motion SPM® 45 Series Detailed Package Outline Drawings(FNB41560B2, Long Terminal Type) ©2011 Fairchild Semiconductor Corporation FNB41560 / FNB41560B2 Rev. C1 15 www.fairchildsemi.com ©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com