FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 34 A, 100 V. RDS(ON) = 32 mΩ @ V GS = 10 V RDS(ON) = 35 mΩ @ V GS = 6 V • Low gate charge (57 nC typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. • Fast switching speed • High performance trench technology for extremely low RDS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • High power and current handling capability D D G G S TO-252 S Absolute Maximum Ratings Symbol Parameter V DSS Drain-Source Voltage V GSS Gate-Source Voltage ID Drain Current – Continuous Drain Current – Pulsed PD TJ , TSTG TA=25oC unless otherwise noted (Note 1) Ratings Units 100 V ±20 34 A V 100 Maximum Power Dissipation @ TC = 25°C (Note 1) 83 @ TA = 25°C (Note 1a) 3.8 @ TA = 25°C (Note 1b) Operating and Storage Junction Temperature Range 1.6 W –55 to +175 °C (Note 1) 1.8 °C/W (Note 1b) 96 °C/W Thermal Characteristics RθJ C Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD3670 FDD3670 13’’ 16mm 2500 units 2001 Fairchild Semiconductor Corporation FDD3670 Rev C(W) FDD3670 June 2001 Symbol Parameter Drain-Source Avalanche Ratings WDSS IAR TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units (Note 2) Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current V DD = 50 V, ID = 7.3 A 360 mJ 7.3 A Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C V DS = 80 V, V GS = 0 V 10 IGSSF Gate–Body Leakage, Forward V GS = 20 V, V DS = 0 V 100 µA nA IGSSR Gate–Body Leakage, Reverse V GS = –20 V, V DS = 0 V –100 nA 4 V On Characteristics 100 V mV/°C 92 (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS , ID = 250 µA ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C ID(on) On–State Drain Current V GS V GS V GS V GS gFS Forward Transconductance V DS = 5 V, ID = 7.3 A V DS = 50 V, V GS = 0 V, 2 = 10 V, ID = 7.3 A = 10 V, ID = 7.3 A, TJ = 125°C = 6 V, ID = 7.0 A = 10 V, V DS = 5 V 2.5 –7.2 22 39 24 mV/°C 32 56 35 25 15 mΩ A 31 S 2490 pF 265 pF 80 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) f = 1.0 MHz (Note 2) 16 26 ns 10 18 ns Turn–Off Delay Time 56 84 ns tf Turn–Off Fall Time 25 40 ns Qg Total Gate Charge 57 80 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge V DD = 50 V, V GS = 10 V, V DS = 50 V, V GS = 10 V ID = 1 A, RGEN = 6 Ω ID = 7.3 A, 11 nC 15 nC Drain–Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = 2.7 A Voltage (Note 2) 0.72 2.7 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA= 40oC/W when mounted on a 1in2 pad of 2oz copper. b) RθJA= 96oC/W on a minimum mounting pad. Scale 1 : 1 on letter size paper Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDD3670 Rev C(W) FDD3670 Electrical Characteristics FDD3670 Typical Characteristics 2 60 ID, DRAIN CURRENT (A) 50 5.0V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 10V 5.5V 40 30 4.0V 20 10 1.8 1.6 V GS = 4.0V 1.4 4.5V 1.2 5.0V 5.5V 7.0V 10V 1 3.5V 0.8 0 0 1 2 3 4 0 5 10 20 Figure 1. On-Region Characteristics. 50 60 0.06 ID = 7.3A V GS = 10V 2.2 2 ID = 3.7A RDS(ON), ON-RESISTANCE ( Ω ) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2.4 1.8 1.6 1.4 1.2 1 0.8 0.05 T A = 125o C 0.04 0.03 0.02 T A = 25o C 0.01 0.6 0.4 0 -50 -25 0 25 50 75 100 125 150 175 3 4 5 T J, JUNCTION TEMPERATURE ( oC) 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 60 VGS = 0V IS, REVERSE DRAIN CURRENT (A) V DS = 5V 50 ID, DRAIN CURRENT (A) 30 ID , DRAIN CURRENT (A) V DS, DRAIN-SOURCE VOLTAGE (V) 40 30 125o C 20 25o C 10 T A = -55oC 10 T A = 125o C 1 25o C 0.1 -55o C 0.01 0.001 0.0001 0 2 3 4 5 V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 6 0 0.2 0.4 0.6 0.8 1 1.2 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD3670 Rev C(W) FDD3670 Typical Characteristics 10 4500 8 f = 1MHz V GS = 0 V 4000 VDS = 20V 50V 3500 80V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) ID = 7.3A 6 4 3000 CISS 2500 2000 1500 1000 2 C RSS COSS 500 0 0 0 10 20 30 40 50 60 0 20 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 60 80 100 Figure 8. Capacitance Characteristics. 40 P(pk), PEAK TRANSIENT POWER (W) 1000 100 ID, DRAIN CURRENT (A) 40 V DS, DRAIN TO SOURCE VOLTAGE (V) RDS(ON) LIMIT 100µs 1ms 10ms 100ms 10 1s 1 10s V GS = 10V SINGLE PULSE DC RθJA = 96o C/W 0.1 TA = 25oC 0.01 SINGLE PULSE Rθ JA = 96°C/W T A = 25°C 30 20 10 0 0.1 1 10 100 1000 0.1 1 V DS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1 , TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 96 °C/W 0.2 0.1 0.1 0.05 0.01 0.02 0.01 P(pk) t1 t2 0.001 0.0001 0.0001 T J - TA = P * Rθ JA(t) Duty Cycle, D = t 1 / t2 SINGLE PULSE 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD3670 Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3