MCC 2SA1585S

MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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Features
•
•
•
•
2SA1585S
2SA1585S-Q
2SA1585S-R
PNP
Plastic-Encapsulate
Transistors
Power dissipation: PD = 0.4W(Tamb=25ć)
Collector current: ICM = -2A
Collector-base voltage: V(BR)CBO = -20V
Operating and storage junction temperature range
TJ, Tstg: -55ć to + 150ć
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
VCEO
VCBO
VEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Parameter
Collector-Emitter Voltage
(IC=-50­A, IE=0)
Collector-Base Voltage
(IC=-1­A, IB=0)
Emitter-Base Voltage
(IE=-50­A, IC=0)
Collector cut-off Current
(VCB=-20V, IE=0)
Emitter cut-off Current
(VEB=-5V, IC=0)
DC current gain
(VCE=-2V, IC=-0.1A)
Collector-Emitter Saturation Voltage
(IC=-2A, IB=-0.1A)
Transition Frequency
(VCE=2.0Vdc, IC=0.5Adc)
Min
Typ
Max
Unit
-20
---
---
V
-20
---
---
V
-6.0
---
---
V
---
---
-0.1
­A
---
---
-0.1
­A
120
---
390
---
---
---
-0.82
200
---
---
TO-92S
A
E
B
V
C
MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
120-170
1815Q
R
180-390
1815R
1
2
3
D
1.EMITTER
2.COLLECTOR
3.BASE
G
DIMENSIONS
DIM
A
B
C
D
E
G
INCHES
MIN
MAX
.16
.12
.59
--.02
.08
.20
MM
MIN
MAX
NOTE
4.00
3.00
15.00
--0.45
2.00
5.00
www.mccsemi.com
Revision: 2
2007/03/02