Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1188 FEATURES Power dissipation PCM: 0.5 Collector current -2 ICM: Collector-base voltage V(BR)CBO: SOT-89 TRANSISTOR (PNP) 1. BASE W (Tamb=25℃) 2. COLLECTOR1 2 A -40 3. EMITTER 3 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-50µA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA, IC=0 -5 V Collector cut-off current ICBO VCB=-20 V , IE=0 -1 µA Emitter cut-off current IEBO VEB=-4 V , -1 µA DC current gain * hFE VCE=-3V, IC= -0.5A VCe(sat) IC=-2A, IB= -0.2A fT VCE=-5V, IC=-0.5A ,f=30MHz Cob VCB=-10V, IE=0 ,f=1MHz Collector-emitter saturation voltage * Transition frequency Output capacitance IC=0 82 390 -0.8 80 MHz 65 * Measured using pulse current. CLASSIFICATION OF hFE Rank Range Marking V p Q R 82-180 120-270 180-390 BCP BCQ BCR pF