JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR（ NPN ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 1. EMITTER 2.COLLECTOR 3.BASE 123 unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100μA ，IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 10 mA , IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100 μA，IC=0 6 V Collector cut-off current ICBO VCB=40 V , IE=0 1 μA Collector cut-off current ICEO VCE=30 V , IB=0 10 μA Emitter cut-off current IEBO VEB=6V , 1 μA hFE（1） VCE= 2V, IC= 1A 60 hFE（2） VCE=2V, IC= 100mA 32 Collector-emitter saturation voltage VCE(sat) IC=2A, IB= 0.2A 0.5 V Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.2A 1.5 V IC=0 400 DC current gain VCE=5 V, IC=0.1mA Transition frequency f 50 T MHz f = 10MHz CLASSIFICATION OF h FE(1) Rank Range R O Y GR 60-120 100-200 160-320 200-400 TO-126 PACKAGE OUTLINE DIMENSIONS D A A1 L1 E P φ L b1 b e C e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 2.500 2.900 0.098 0.114 A1 1.100 1.500 0.043 0.059 b 0.660 0.860 0.026 0.034 b1 1.170 1.370 0.046 0.054 c 0.450 0.600 0.018 0.024 D 7.400 7.800 0.291 0.307 E 10.600 11.000 0.417 0.433 2.290TYP e 0.090TYP e1 4.480 4.680 0.176 0.184 L 15.300 15.700 0.602 0.618 L1 2.100 2.300 0.083 0.091 P 3.900 4.100 0.154 0.161 φ 3.000 3.200 0.118 0.126