FDS3570 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. D D 9 A, 80 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. • Fast switching speed. • High performance trench technology for extremely low RDS(ON). • High power and current handling capability. D D SO-8 S S S 4 6 3 7 2 8 1 G Absolute Maximum Ratings Symbol 5 TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage ±20 V ID Drain Current 9 A - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation 50 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range W 1 -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS3570 FDS3570 13’’ 12mm 2500 units 2000 Fairchild Semiconductor International FDS3570 Rev. C FDS3570 December 2000 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS IAR Single Pulse Drain-Source VDD = 40 V, ID = 9 A Avalanche Energy Maximum Drain-Source Avalanche Current Off Characteristics 360 mJ 9 A BVDSS ∆BVDSS ∆TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 64 V, VGS = 0 V IGSSF Gate-Body Leakage,Forward VGS = 20 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage,Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics 80 V mV/°C 77 1 (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage ID(on) On-State Drain Current VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 9 A VGS = 10 V, ID = 9 A, TJ = 125°C VGS = 6 V, ID = 8.4 A VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 7.6 A Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance 2 2.4 4 0.015 0.027 0.016 V mV/°C -7 0.020 0.038 0.023 25 Ω A 40 S Dynamic Characteristics VDS = 25 V, VGS = 0 V, f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) 2750 pF 280 pF 140 pF (Note 2) VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 20 32 12 24 ns Turn-Off Delay Time 60 95 ns tf Turn-Off Fall Time 24 38 ns Qg Total Gate Charge 54 76 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 40 V, ID = 9 A, VGS = 10 V ns 9.6 nC 14 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.72 2.1 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50° C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.04 in2 pad of 2 oz. copper. c) 125° C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDS3570 Rev. C FDS3570 Electrical Characteristics FDS3570 Typical Characteristics 2 ID, DRAIN CURRENT (A) VGS = 10V 5.0V 6 0V 40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 50 4.5V 30 4.0V 20 10 3.5V 0 1.8 1.6 VGS = 4.0V 1.4 4.5V 5.0V 1.2 6.0V 7.0V 0.8 0 1 2 3 0 10 VDS, DRAIN-SOURCE VOLTAGE (V) 20 30 40 50 ID, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 0.06 2 ID = 9A VGS = 10V 1.8 ID = 4.5A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10V 1 1.6 1.4 1.2 1 0.8 0.6 0.05 o TA = 125 C 0.04 0.03 0.02 o TA = 25 C 0.01 0 0.4 0 -50 -25 0 25 50 75 100 125 2 150 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 60 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 50 40 30 20 o 125 C 10 25 o o TA = -55 C VGS = 0V 10 o TA = 125 C 1 o 25 C o 0.1 -55 C 0.01 0.001 0.0001 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS3570 Rev. C 4000 VDS = 10V ID = 9A f = 1MHz VGS = 0 V 3500 20V 8 40V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 3000 CISS 2500 2000 1500 1000 500 0 COSS CRSS 0 0 10 20 30 40 50 60 0 10 Qg, GATE CHARGE (nC) 20 30 40 100 60 50 RDS(ON) LIMIT SINGLE PULSE 100µs o 100ms VGS = 10V SINGLE PULSE 0.1 o TA = 25 C 1s 10s DC 1 RθJA = 125 C/W 40 1ms 10ms 10 POWER (W) ID, DRAIN CURRENT (A) 50 VDS, DRAIN TO SOURCE VOLTAGE (V) o RθJA = 125 C/W 30 20 10 o TA = 25 C 0.01 0 0.1 1 10 100 0.001 0.01 r(t), NORM ALIZED EFFECTIVE VDS, DRAIN-SOURCE VOLTAGE (V) TR ANSI ENT TH ER MAL RESISTANC E VDS = 10V ID = 9A 0.1 1 10 100 SINGLE PULSE TIME (SEC) 1 0.5 0.2 0.1 0.05 D = 0.5 R θJ A (t) = r(t) * R θJ A R θJ A= 125°C /W 0.2 0.1 0 .0 5 P(p k ) 0.0 2 0.02 t1 0.01 0.01 S i n g le P ul s e t2 TJ - TA = P * RθJA ( )t 0.0 05 D u t y C y c l e, D = t 1 /t2 0.0 02 0.0 01 0.0001 0.0 01 0.01 0.1 t 1, TI M E (s e c ) 1 10 100 300 1000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G