MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. 2 INDEX MARK (Gate) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω Junction to case .D t a S a e h t e RATINGS 30 +/- 20 50 1.5 3 150 -40 to +125 2.5 U 4 0.9+/-0.1 0.2+/-0.05 For output stage of high power amplifiers in VHF/UHF band mobile radio sets. .c (0.25) Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. w ELECTRICAL CHARACTERISTICS SYMBOL IDSS IGSS VTH Pout1 ηD1 Pout2 ηD2 w PARAMETER w Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance Load VSWR tolerance (Tc=25°C, UNLESS OTHERWISE NOTED) CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz , VDD=7.2V Pin=0.3W,Idq=700mA f=520MHz , VDD=7.2V Pin=0.7W,Idq=750mA VDD=9.2V,Po=7W(PinControl) f=175MHz,Idq=700mA,Zg=50Ω Load VSWR=20:1(All Phase) VDD=9.2V,Po=7W(PinControl) f=520MHz,Idq=750mA,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.4 7 55 7 50 MITSUBISHI ELECTRIC 1/8 w h S a No destroy Note : Above parameters , ratings , limits and conditions are subject to change. RD07MVS1 LIMITS TYP MAX. 200 1 1.7 2.4 8 60 8 55 No destroy w w .D at t e e UNIT uA uA V W % W % - 4U . m o c - REV.7 2 Apr. 2004 (0.22) APPLICATION PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction Temperature Storage temperature Thermal resistance m o 3 (0.25) SYMBOL VDSS VGSS Pch Pin ID Tj Tstg Rth j-c 2.0+/-0.05 1.0+/-0.05 4.9+/-0.15 •High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz •High Efficiency: 60%typ. (175MHz) •High Efficiency: 55%typ. (520MHz) 3.5+/-0.05 1 FEATURES MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 50 40 *1:The material of the PCB Glass epoxy (t=0.6 mm) 8.0 On PCB(*1) with Heat-sink 6.0 Ids(A) CHANNEL DISSIPATION Pch(W) 60 Vgs-Ids CHARACTERISTICS 10.0 30 20 10 4.0 2.0 On PCB(*1) 0 0.0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 Vds-Ids CHARACTERISTICS 2 3 Vgs(V) 4 5 160 Vgs=5V Ta=+25°C Ta=+25°C f=1MHz 140 Vgs=4.5V 7 6 5 4 3 Vgs=4V Vgs=3.5V 2 1 0 120 100 80 60 40 Vgs=3V 20 0 0 2 4 6 Vds(V) 8 0 10 Vds VS. Coss CHARACTERISTICS Ta=+25°C f=1MHz 100 Crss(pF) 80 60 40 20 0 0 5 10 Vds(V) 15 20 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 120 Coss(pF) 1 Vds VS. Ciss CHARACTERISTICS Ciss(pF) Ids(A) 10 9 8 RD07MVS1 Ta=+25°C Vds=10V 20 18 16 14 12 10 8 6 4 2 0 Ta=+25°C f=1MHz 0 MITSUBISHI ELECTRIC 2/8 5 10 Vds(V) 15 20 REV.7 2 Apr. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS Pin -Po C HA RA C T ERIST IC S @ f =175M Hz Pin -Po C HA RA C T ERIST IC S @ f =175M Hz 12.0 100 80 10.0 Vdd= 7.2V Po ηd ηｄ 30 60 Gp 20 40 10 Pout(W) , Idd(A ) Idq= 700m A 6.0 f= 175M H z Vdd= 7.2V 4.0 Idq= 700m A 2.0 0 0 10 15 Pin(dBm) 20 25 0.0 20 30 0 200 400 600 800 1000 Pin(mW ) Pin -Po C HA RA C T ERIST IC S @ f =520M Hz Pin -Po C HA RA C T ERIST IC S @ f =520M Hz 14.0 Ta= + 25°C f= 520M H z 80 12.0 Vdd= 7.2V Idq= 750m A Gp ηｄ 20 40 10 90 10.0 60 Pout(W) , Idd(A ) 30 100 Po ηd(% ) Po(dBm) , Gp(dB) , Idd(A ) 40 Po 8.0 70 Ta= 25°C f= 520M H z 6.0 Idq= 750m A 4.0 0 0 10 15 20 Pin(dBm) 25 40 0.0 30 30 0.0 30 6 5 Ta= 25°C 5 Pin= 0.3W Pin= 0.7W 20 4 Icq= 750m A Zg= ZI= 50 ohm Zg= ZI= 50 ohm 4 Idd 3 10 2 5 1 0 0 10 12 14 Po(W) 15 8 Idd 15 Idd(A ) 20 Po(W) Po f= 520M H z Icq= 700m A 3 10 2 5 1 0 0 4 V dd(V ) RD07MVS1 1.5 25 Po f= 175M H z 6 1.0 V d d - Po C HA RA C T ERIST IC S @ f =520M Hz Ta= 25°C 4 0.5 Pin(W ) V d d - Po C HA RA C T ERIST IC S @ f =175M Hz 25 50 Idd 2.0 Ｉｄｄ 5 60 Vdd= 7.2V 20 0 80 ηd Idd(A ) 5 40 Idd Ｉｄｄ 0 60 Ta= 25°C 20 -5 80 8.0 ηd(% ) f= 175M H z ηd(% ) Po(dBm) , Gp(dB) , Idd(A ) 40 Po ηd(% ) Ta= + 25°C 6 8 10 12 14 V dd(V ) MITSUBISHI ELECTRIC 3/8 REV.7 2 Apr. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS Vgs-Ids CHARACTERISTICS 2 10 +25°C Vds=10V Tc=-25~+75°C Ids(A) 8 -25°C 6 +75°C 4 2 0 2 3 4 5 Vgs(V) RD07MVS1 MITSUBISHI ELECTRIC 4/8 REV.7 2 Apr. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,520MHz,7W TEST CIRCUIT(f=175MHz) Vgg Vdd W 19mm 1 9 .5 m m 2 4 .5 m m 1 0 uF ,5 0 V W R D 0 7 MV S 1 1 7 5 MHz 4 .7 kO HM R F -in C2 19mm C1 22pF L 6 .5 m m 2 8 .5 m m 1 m m 1 1 .5 m m 3 m m 10mm 3 .5 m m 1 1 .5 m m 5mm 62pF 5mm 62pF R F -o ut 6 8 O HM 140pF 100pF 16pF 22pF 56pF 180pF L : E nam e le d wire 7 T urns,D :0 .4 3 m m ,2 .4 6 m m O .D No te :B o ard m ate rial- T e flo n sub strate C 1 ,C 2 :1 0 0 0 p F ,0 .0 2 2 uF in p aralle l Mic ro s trip line wid th=2 .2 m m /5 0 O HM,e r:2 .7 ,t=0 .8 m m W :line wid th=1 .0 m m TEST CIRCUIT(f=520MHz) Vgg Vdd C1 W 1 9m m 4 .7 kO HM R F -in 4 6m m 2 0p F R D 0 7MV S 1 5 20 MHz 3 .5 m m 3 .5 m m 4 4.5 m m R F -out 3 .5 m m 6 8p F 6 8p F 3 7p F 2 0p F 1 0p F L : E nam e led wire 5T urns,D :0 .4 3 m m ,2 .46 m m O .D C 1 ,C 2:1 00 0 pF ,0.0 22 uF in p arallel 1 0uF ,5 0 V L 6 .5 m m 6 .5 m m 9mm C2 1 9m m W 6 pF 1 8p F No te :B oard m aterial- Te flon subs trate Micro strip line wid th=2 .2 m m /50 O HM,e r:2 .7,t=0.8 m m W :ine width=1 .0m m RD07MVS1 MITSUBISHI ELECTRIC 5/8 REV.7 2 Apr. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 175MHz Zin* Zout* Ω Zo=10Ω Vdd=7.2V, Idq=700mA(Vgg adj.),Pin=0.28W Zin*=1.55+j5.53 Zout*=3.24-j0.26 175MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 175MHz Zout* 520MHz Zin* Zout* Ω Zo=10Ω Vdd=7.2V, Idq=750mA(Vgg adj.),Pin=0.7W Zin*=0.76+j0.06 Zout*=1.61-j0.52 Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 520MHz Zin* 520MHz Zout* RD07MVS1 MITSUBISHI ELECTRIC 6/8 REV.7 2 Apr. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,520MHz,7W RD07MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=750mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.890 0.897 0.899 0.901 0.907 0.913 0.918 0.924 0.928 0.933 0.935 0.937 0.940 0.942 0.944 0.947 0.948 0.949 0.951 0.951 0.952 0.950 0.952 S21 (ang) -174.1 -175.6 -176.0 -176.3 -176.7 -177.0 -177.3 -177.8 -178.0 -178.3 -178.5 -178.8 -179.2 -179.4 -179.8 179.8 179.4 179.0 178.6 178.2 177.9 177.4 176.9 (mag) 5.508 3.613 3.028 2.604 2.019 1.614 1.308 1.102 0.929 0.790 0.753 0.692 0.595 0.529 0.467 0.416 0.374 0.343 0.304 0.284 0.262 0.234 0.226 S12 (ang) 82.1 75.0 72.4 70.1 65.6 60.7 57.1 54.1 50.1 48.6 47.6 45.3 43.6 42.4 40.2 39.4 38.6 37.6 36.5 37.6 35.1 36.0 35.8 (mag) 0.016 0.015 0.015 0.014 0.014 0.012 0.011 0.010 0.009 0.008 0.007 0.007 0.006 0.006 0.005 0.005 0.004 0.005 0.005 0.006 0.007 0.008 0.009 S22 (ang) -3.6 -8.5 -9.6 -10.9 -12.7 -15.3 -15.8 -14.2 -14.8 -9.6 -7.7 -5.6 0.4 17.1 21.8 40.9 52.0 67.1 72.6 85.8 85.1 89.8 93.4 (mag) 0.790 0.801 0.802 0.815 0.844 0.843 0.860 0.879 0.882 0.895 0.901 0.906 0.907 0.916 0.923 0.921 0.930 0.933 0.932 0.937 0.938 0.938 0.940 (ang) -172.8 -174.0 -174.1 -174.0 -174.1 -174.1 -174.4 -175.0 -175.1 -175.5 -175.8 -176.2 -176.6 -177.2 -177.6 -178.0 -178.8 -178.9 -179.3 179.8 179.7 179.3 178.2 RD07MVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=750mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 RD07MVS1 S11 (mag) 0.883 0.891 0.894 0.897 0.906 0.914 0.920 0.927 0.932 0.937 0.938 0.940 0.944 0.946 0.948 0.950 0.951 0.953 0.954 0.954 0.954 0.952 0.954 S21 (ang) -172.1 -174.1 -174.6 -175.0 -175.6 -176.0 -176.4 -177.0 -177.4 -177.8 -178.0 -178.3 -178.8 -179.1 -179.5 -179.9 179.6 179.2 178.8 178.4 178.0 177.5 177.0 (mag) 6.013 3.914 3.269 2.798 2.144 1.697 1.361 1.134 0.949 0.800 0.761 0.697 0.594 0.527 0.464 0.412 0.368 0.336 0.297 0.276 0.254 0.226 0.219 S12 (ang) 81.0 72.8 69.8 67.2 62.1 56.9 53.0 49.9 45.8 44.2 43.2 41.1 39.3 38.2 36.1 35.5 34.5 33.6 32.3 33.8 31.1 32.2 32.0 (mag) 0.017 0.016 0.016 0.015 0.014 0.012 0.011 0.010 0.009 0.007 0.007 0.006 0.005 0.004 0.004 0.004 0.004 0.004 0.005 0.006 0.006 0.007 0.008 MITSUBISHI ELECTRIC 7/8 S22 (ang) -5.3 -10.7 -13.1 -14.9 -18.3 -20.4 -21.6 -21.2 -21.8 -16.9 -16.0 -13.3 -7.2 4.5 17.4 28.0 56.9 66.4 78.3 87.4 90.9 94.7 98.0 (mag) 0.748 0.765 0.769 0.786 0.822 0.828 0.848 0.871 0.876 0.892 0.898 0.904 0.906 0.917 0.924 0.922 0.931 0.934 0.933 0.939 0.941 0.940 0.943 (ang) -170.4 -171.4 -171.4 -171.3 -171.4 -171.6 -172.0 -172.9 -173.2 -173.7 -174.1 -174.6 -175.1 -175.9 -176.3 -176.9 -177.8 -178.0 -178.3 -179.4 -179.5 -179.9 178.9 REV.7 2 Apr. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD07MVS1 MITSUBISHI ELECTRIC 8/8 REV.7 2 Apr. 2004