MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ. •Integrated gate protection diode 1.5+/-0.1 1.6+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection. φ 1 2 1.5+/-0.1 3.9+/-0.3 DESCRIPTION 1 0. 3 0.4 +0.03 -0.05 1.5+/-0.1 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm 0.1 MAX APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANT RD01MUS2-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Channel Temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 30 V Vds=0V -5/+10 V Tc=25°C 3.6 W Zg=Zl=50Ω 60 mW 600 mA °C 150 -40 to +125 °C °C/W Junction to case 34.5 D G SCHEMATIC S DRAWING Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER IDSS IGSS Vth Pout ηd Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=30mW f=520MHz,Idq=100mA MIN 1 0.8 50 LIMITS TYP 1.8 1.4 65 UNIT MAX 50 1 3 - uA uA V W % Note : Above parameters , ratings , limits and conditions are subject to change. RD01MUS2 MITSUBISHI ELECTRIC 1/6 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE Vgs-Ids CHARACTERISTICS 1.2 *1:The material of the PCB Glass epoxy (t=0.6 mm) 3 0.8 On PCB(*1) with Heat-sink 2 0.6 0.4 1 On PCB(*1) 0.2 0.0 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Vds-Ids CHARACTERISTICS Vgs=10V Vgs=9V Vgs=8V Ta=+25°C 2 Vgs=7V Vgs=5V 1 Ciss(pF) Ids(A) Vgs=6V 1.5 Vgs=4V 0.5 Vgs=3V 0 0 2 4 6 Vds(V) 8 20 18 16 14 12 10 8 6 4 2 0 4 5 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 4 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 3 Crss(pF) Coss(pF) 2 3 Vgs(V) Ta=+25°C f=1MHz 0 10 Vds VS. Coss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 1 Vds VS. Ciss CHARACTERISTICS 2.5 2 1 0 0 RD01MUS2 Ta=+25°C Vds=10V 1.0 Ids(A) CHANNEL DISSIPATION Pch(W) 4 5 10 Vds(V) 15 20 0 MITSUBISHI ELECTRIC 2/6 5 10 Vds(V) 15 20 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS 80 Po 60 Gp 20 50 15 40 ηｄ 10 30 Ta=+25°C f=520MHz Vdd=7.2V Idq=100mA 5 20 0 10 -10 0 10 Pin(dBm) Pout(W) , Idd(A) 25 70 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 30 1.5 0.3 1.0 0.2 0.5 0.1 0.0 RD01MUS2 0.5 0.4 0.0 8 10 Vdd(V) 12 40 20 20 40 Pin(mW) 60 14 +25°C Vds=10V Tc=-25~+75°C Ids(A),GM(S) Idd 6 Ta=25°C f=520MHz Vdd=7.2V Idq=100mA 0 0.6 2.0 4 Idd 0.7 Po Idd(A) Po(W) 2.5 60 ηd 2 0.8 3.0 80 Vgs-Ids CHARACTORISTICS 2 4.0 3.5 Po 0 20 Vdd-Po CHARACTERISTICS Ta=25°C f=520MHz Pin=30mW Idq=100mA Zg=ZI=50 ohm 100 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 ηd(%) 35 -25°C +75°C 1 0 2 MITSUBISHI ELECTRIC 3/6 3 4 Vgs(V) 5 6 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W TEST CIRCUIT(f=520MHz) Vgg Vdd C1 10uF,50V C2 11m m 18m m 68pF 5m m RD01MUS2 RD 01MUS1 4.7kO HM 4m m 30m m 6.5m m L1 4m m 5.5m m 13m m R F-IN 17.5m m 25.5m m 4m m RF-O UT 3m m 62pF 68O HM 3pF 24pF 62pF 10pF 240pF L1: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D Note:Board m aterial-glass epoxi substrate C 1,C2: 1000pF,0.022uF in parallel Micro strip line width=1.0m m /50O HM,er:4.8,t=0.6m m INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 520MHz Zin* Zout* Zo=50Ω Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W Zin* =3.11+j11.56 Zout*=11.64+j4.74 520MHz Zin* 520MHz Zout* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance RD01MUS2 MITSUBISHI ELECTRIC 4/6 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W RD01MSU2 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.941 0.881 0.863 0.844 0.820 0.813 0.807 0.807 0.809 0.810 0.812 0.813 0.820 0.822 0.831 0.837 0.842 0.847 0.853 0.857 0.862 0.865 0.870 (ang) -83.9 -107.9 -116.7 -123.9 -134.4 -142.3 -148.3 -152.7 -156.9 -160.0 -161.2 -163.1 -165.6 -168.0 -170.1 -172.1 -174.0 -176.0 -177.9 -179.6 178.9 177.2 175.6 S21 (mag) (ang) 18.598 128.5 14.425 112.0 12.863 105.7 11.496 100.2 9.351 91.4 7.854 84.1 6.682 77.7 5.797 72.5 5.096 67.0 4.487 62.7 4.286 61.0 3.996 58.1 3.595 54.1 3.231 50.4 2.944 46.8 2.686 43.2 2.451 40.0 2.255 36.6 2.076 33.6 1.915 30.7 1.769 28.0 1.645 25.5 1.526 23.2 S12 (mag) 0.046 0.052 0.054 0.054 0.054 0.053 0.053 0.051 0.048 0.047 0.046 0.045 0.041 0.040 0.038 0.035 0.033 0.030 0.027 0.025 0.022 0.020 0.017 S22 (ang) 36.0 21.1 15.3 10.8 3.0 -4.3 -7.8 -12.7 -17.1 -20.0 -21.0 -24.7 -25.0 -29.2 -31.4 -33.6 -35.2 -37.7 -37.8 -37.4 -37.8 -37.5 -34.9 (mag) 0.761 0.660 0.632 0.606 0.575 0.566 0.569 0.574 0.588 0.604 0.609 0.620 0.637 0.653 0.672 0.686 0.703 0.717 0.731 0.742 0.757 0.766 0.778 (ang) -65.2 -85.2 -92.3 -98.0 -107.2 -114.1 -119.4 -123.7 -127.7 -131.0 -132.4 -134.3 -137.2 -139.7 -142.4 -144.6 -147.1 -149.3 -151.3 -153.6 -155.5 -157.6 -159.3 RD01MSU2 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 RD01MUS2 S11 (mag) 0.957 0.902 0.884 0.867 0.843 0.831 0.824 0.821 0.823 0.824 0.826 0.825 0.829 0.833 0.839 0.843 0.849 0.854 0.858 0.862 0.869 0.870 0.876 (ang) -79.3 -103.4 -112.7 -120.1 -131.4 -139.8 -146.1 -150.9 -155.3 -158.6 -160.0 -161.9 -164.4 -167.2 -169.4 -171.5 -173.6 -175.4 -177.2 -179.0 179.4 177.6 175.9 S21 (mag) (ang) 18.576 131.4 14.762 114.9 13.236 108.3 11.888 102.6 9.751 93.5 8.210 86.0 7.005 79.5 6.079 74.1 5.343 68.6 4.726 64.2 4.523 62.2 4.226 59.6 3.792 55.6 3.429 51.5 3.117 47.7 2.837 44.2 2.597 41.1 2.397 37.6 2.196 34.7 2.034 31.8 1.890 29.0 1.745 26.2 1.625 23.4 S12 (mag) 0.041 0.049 0.049 0.051 0.051 0.050 0.050 0.048 0.046 0.043 0.044 0.042 0.040 0.037 0.035 0.033 0.030 0.028 0.026 0.022 0.020 0.018 0.017 MITSUBISHI ELECTRIC 5/6 S22 (ang) 40.9 24.5 17.9 13.0 6.1 -1.5 -6.4 -11.2 -14.5 -19.2 -19.3 -21.9 -23.9 -27.8 -30.5 -31.2 -34.9 -35.3 -35.7 -37.5 -37.4 -37.7 -33.9 (mag) 0.740 0.642 0.615 0.592 0.559 0.553 0.553 0.559 0.573 0.589 0.594 0.605 0.622 0.639 0.656 0.675 0.691 0.705 0.718 0.732 0.745 0.757 0.770 (ang) -59.4 -78.6 -85.4 -91.3 -100.5 -107.6 -112.9 -117.9 -122.0 -125.5 -127.1 -129.0 -132.0 -134.9 -137.8 -140.1 -143.0 -145.2 -147.6 -149.6 -151.9 -154.1 -156.0 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD01MUS2 Silicon MOSFET Power Transistor 520MHz,1W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD01MUS2 MITSUBISHI ELECTRIC 6/6 17 Jan. 2006