MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) •High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz •High Efficiency: 55%min. (175MHz) •No gate protection diode INDEX MARK [Gate] 4.2+/-0.2 5.6+/-0.2 6.2+/-0.2 (3.6) 8.0+/-0.2 (d) (b) 0.65+/-0.2 OUTLINE DRAWING DESCRIPTION 2.6+/-0.2 0.95+/-0.2 (c) TOP VIEW SIDE VIEW BOTTOM VIEW APPLICATION SIDE VIEW For output stage of high power amplifiers in VHF band mobile radio sets. Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source Standoff = max 0.05 0.7+/-0.1 1.8+/-0.1 DETAIL A UNIT:mm DETAIL A NOTES: 1. ( ) Typical value RoHS COMPLIANT RD12MVP1 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS ID Pin Pch Tj Tstg Rthj-c PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Channel Dissipation Junction Temperature Storage Temperature Thermal Resistance CONDITIONS VGS=0V VDS=0V Zg=Zl=50Ω Tc=25°C Junction to Case RATINGS 60 -5 to +20 4.0 1.0 125 +150 -40 to +125 1.5 UNIT V V A W W °C °C °C/W Note: Above parameters are guaranteed independently. (Tc=25°C, UNLESS OTHERWISE NOTED) ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS IDSS IGSS VTH Pout ηD Zero Gate Voltage Drain Current Gate to Source Leak Current Gate Threshold Voltage Output Power Drain Efficiency VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz,VDD=7.2V Pin=0.5W,Idq=1.0A VDD=9.5V,Po=10W(Pin Control) f=175MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) VSWRT Load VSWR tolerance MIN. 1.8 10 55 LIMITS TYP. MAX. 10 1.0 4.4 12 57 No destroy UNIT uA uA V W % - Note: Above parameters, ratings, limits and conditions are subject to change. RD12MVP1 MITSUBISHI ELECTRIC 1/7 1st Jun. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE CHANNEL DISSIPATION Pch(W 60 Vgs-Ids CHARACTERISTICS 7 *PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm) Thermal sheet: GELTEC COOH-4000(t=0.5mm) 50 Ta=+25°C Vds=10V 6 Ids 5 30 Ids(A) 40 On PCB with Termal sheet and Heat-sink (Size : 41 x 55mm, t=7.2 mm) 20 4 3 2 10 1 0 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(deg:C.) 200 0 Vds-Ids CHARACTERISTICS Ta=+25°C Vgs=7.5V 6 7 120 5 Vgs=6.5V 4 3 Ciss(pF) Ids(A) 5 Ta=+25°C f=1MHz 140 6 Vgs=5.5V 1 100 80 60 40 2 20 Vgs=4.5V 0 0 0 1 2 3 4 5 Vds(V) 6 7 8 9 0 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 20 160 Ta=+25°C f=1MHz 140 Ta=+25°C f=1MHz 18 16 120 14 100 Crss(pF) Coss(pF) 3 4 Vgs(V) 160 7 80 60 12 10 8 6 40 4 20 2 0 0 0 RD12MVP1 2 Vds VS. Ciss CHARACTERISTICS 9 8 1 5 10 Vds(V) 15 20 0 MITSUBISHI ELECTRIC 2/7 5 10 Vds(V) 15 20 1st Jun. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175MHz 90 14 60 30 ηｄ Gp 20 40 10 20 Ｉｄｄ 0 5 10 15 20 Pin(dBm) 80 70 10 8 ηd Ta=25°C f=175MHz Vdd=7.2V Idq=1.0A 6 4 Idd 25 0 30 60 50 40 30 2 0 0 Po 12 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 80 Po Pout(W) , Idd(A) Ta=+25°C f=175MHz Vdd=7.2V Idq=1.0A 40 ηd(%) Pin-Po CHARACTERISTICS @f=175MHz 0.0 0.5 1.0 20 1.5 Pin(W) Vdd-Po CHARACTERISTICS @f=175MHz 30 6 Po(W) 25 Po 5 Idd 20 4 15 3 10 2 5 1 4 RD12MVP1 Idd(A) Ta=25°C f=175MHz Pin=0.6W Idq=1.0A Zg=ZI=50 ohm 6 8 Vdd(V) 10 12 MITSUBISHI ELECTRIC 3/7 1st Jun. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W TEST CIRCUIT (f=175MHz) Vgg Vdd C1 C2 22uF,50V 19mm W RD12MVP1 175MHz L2 4.7k Ohm W 19mm RF-in 47pF 17mm 3.5mm 3mm 3mm L1 24pF 100pF Note:Board material= glass-Epoxy Substrate Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm W:Line width=1.0mm RD12MVP1 RF-out 9.5mm 9.5mm 330pF 47pF 14mm 9mm 330pF 54pF L1:10.8nH,4Turns,D:0.43mm,1.66mm(outside diameter) L2:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter) C1,C2:2200pF MITSUBISHI ELECTRIC 4/7 1st Jun. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA) Freq. [MHz] 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 RD12MVP1 S11 (mag) 0.782 0.801 0.817 0.833 0.847 0.860 0.872 0.882 0.894 0.901 0.910 0.917 0.918 0.923 0.930 0.933 0.938 0.939 0.942 0.943 0.946 0.950 0.950 0.953 0.952 0.954 0.955 0.954 0.955 0.958 0.958 0.956 0.958 0.956 0.958 0.957 0.959 S21 (ang) -165.5 -166.9 -168.0 -168.8 -169.7 -170.6 -171.6 -172.4 -173.0 -173.5 -174.2 -175.2 -176.1 -176.7 -177.2 -177.7 -178.1 -178.8 -179.3 179.7 179.5 179.1 178.8 178.3 177.9 177.5 176.9 176.4 176.3 175.9 175.6 175.1 174.5 174.3 174.0 173.8 173.6 (mag) 6.105 4.716 3.724 3.023 2.519 2.137 1.828 1.569 1.361 1.193 1.062 0.947 0.844 0.756 0.683 0.623 0.568 0.520 0.477 0.439 0.407 0.378 0.350 0.327 0.306 0.286 0.268 0.252 0.238 0.225 0.213 0.203 0.192 0.182 0.175 0.166 0.158 S12 (ang) 69.0 62.4 56.4 51.6 47.5 43.5 39.6 36.0 33.4 31.0 28.5 25.9 23.5 21.5 20.4 18.7 17.2 15.7 14.3 13.3 12.2 11.3 10.4 9.8 8.9 8.3 7.7 7.2 7.0 6.4 5.9 5.5 5.3 5.3 5.3 5.2 5.7 (mag) 0.024 0.022 0.021 0.019 0.016 0.015 0.013 0.012 0.010 0.008 0.007 0.006 0.005 0.004 0.005 0.005 0.006 0.007 0.008 0.009 0.011 0.011 0.012 0.013 0.014 0.015 0.016 0.018 0.018 0.020 0.021 0.022 0.023 0.024 0.025 0.026 0.026 S22 (ang) -16.8 -20.5 -25.7 -27.3 -31.1 -30.0 -34.0 -30.9 -31.7 -24.1 -20.9 -13.8 -1.5 16.0 35.4 43.3 53.6 58.5 63.6 68.8 73.9 72.4 74.8 79.1 77.0 77.2 79.2 78.9 79.9 78.9 80.1 79.0 79.6 79.3 78.3 80.7 78.8 MITSUBISHI ELECTRIC 5/7 (mag) 0.743 0.766 0.783 0.799 0.825 0.845 0.864 0.871 0.879 0.888 0.901 0.915 0.918 0.917 0.922 0.928 0.935 0.943 0.941 0.941 0.945 0.949 0.950 0.952 0.954 0.951 0.955 0.957 0.958 0.961 0.954 0.960 0.958 0.962 0.964 0.964 0.962 (ang) -162.7 -164.0 -165.6 -166.4 -167.2 -167.7 -168.6 -169.6 -170.4 -171.3 -172.1 -172.9 -173.6 -174.4 -174.8 -175.5 -176.3 -176.8 -177.1 -177.8 -178.3 -178.9 -179.5 -179.8 179.8 179.4 178.9 178.6 178.1 177.7 177.5 177.3 176.8 176.4 176.0 176.0 175.8 1st Jun. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA) Freq. [MHz] 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 RD12MVP1 S11 (mag) 0.799 0.813 0.825 0.835 0.846 0.857 0.868 0.877 0.886 0.895 0.900 0.907 0.909 0.913 0.921 0.925 0.932 0.931 0.933 0.937 0.943 0.943 0.946 0.947 0.946 0.951 0.949 0.951 0.950 0.956 0.956 0.956 0.953 0.948 0.955 0.955 0.957 S21 (ang) -169.4 -170.7 -171.3 -171.9 -172.5 -173.4 -174.3 -174.9 -175.3 -175.7 -176.4 -177.3 -178.1 -178.7 -179.1 -179.6 -180.0 179.2 178.6 178.0 177.7 177.3 177.0 176.6 175.9 175.5 175.0 174.7 174.5 174.3 173.7 173.3 172.8 172.5 172.2 172.0 171.8 (mag) 5.980 4.690 3.726 3.045 2.569 2.206 1.904 1.648 1.436 1.270 1.141 1.023 0.917 0.820 0.745 0.683 0.627 0.575 0.529 0.486 0.452 0.422 0.391 0.366 0.341 0.322 0.302 0.284 0.269 0.253 0.240 0.228 0.218 0.206 0.196 0.186 0.178 S12 (ang) 72.2 65.9 60.1 55.9 52.3 48.4 44.3 40.7 38.2 35.8 33.1 30.4 27.7 25.8 24.6 23.0 21.2 19.4 18.1 16.6 16.1 14.9 14.0 12.7 12.0 11.3 10.5 9.6 9.3 9.2 8.7 7.9 7.1 6.6 7.0 7.3 7.1 (mag) 0.021 0.020 0.019 0.017 0.016 0.015 0.013 0.011 0.010 0.009 0.008 0.007 0.007 0.005 0.006 0.006 0.007 0.007 0.008 0.009 0.010 0.011 0.013 0.013 0.015 0.015 0.016 0.017 0.019 0.020 0.020 0.021 0.023 0.024 0.024 0.025 0.026 S22 (ang) -11.2 -14.9 -17.2 -21.5 -22.4 -21.1 -21.2 -21.3 -19.9 -15.8 -11.9 -7.2 1.3 20.2 27.4 36.9 50.8 53.6 57.3 67.9 70.4 70.9 73.8 75.6 76.9 75.8 76.4 77.8 79.0 77.8 78.7 78.7 77.3 76.8 78.3 78.6 79.1 MITSUBISHI ELECTRIC 6/7 (mag) 0.757 0.780 0.785 0.794 0.821 0.846 0.863 0.864 0.864 0.876 0.891 0.906 0.915 0.908 0.910 0.921 0.933 0.937 0.935 0.931 0.935 0.945 0.948 0.946 0.946 0.945 0.949 0.952 0.955 0.954 0.950 0.952 0.953 0.958 0.959 0.958 0.956 (ang) -166.6 -167.5 -168.8 -169.3 -169.3 -169.5 -170.4 -170.9 -171.4 -172.0 -172.6 -173.1 -173.9 -174.4 -174.5 -175.2 -175.9 -176.6 -176.8 -177.0 -177.4 -178.0 -178.6 -179.0 -179.3 -179.6 179.9 179.4 179.0 178.9 178.9 178.4 177.9 177.4 177.3 177.4 177.1 1st Jun. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Warning! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD12MVP1 MITSUBISHI ELECTRIC 7/7 1st Jun. 2006