MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. 7.0+/-0.2 0.2+/-0.05 (4.5) INDEX MARK [Gate] 4.2+/-0.2 5.6+/-0.2 (d) 2.6+/-0.2 0.95+/-0.2 (c) TOP VIEW SIDE VIEW BOTTOM VIEW 1.8+/-0.1 DETAIL A 0.7+/-0.1 •High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz •High Efficiency: 43%min. (941MHz) •No gate protection diode 6.2+/-0.2 (3.6) 8.0+/-0.2 FEATURES (b) (b) 0.65+/-0.2 DESCRIPTION Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source For output stage of high power amplifiers in 941MHz band mobile radio sets. Standoff = max 0.05 APPLICATION SIDE VIEW RoHS COMPLIANT UNIT:mm DETAIL A NOTES: 1. ( ) Typical value RD05MMP1 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω Junction to case RATINGS 40 -5 to +10 73 1.4 3 150 -40 to +125 1.7 UNIT V V W W A °C °C °C/W Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency VSWRT Load VSWR tolerance (Tc=25°C, UNLESS OTHERWISE NOTED) CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=941MHz , VDD=7.2V Pin=0.7W,Idq=1.0A VDD=9.5V,Po=5.5W(Pin Control) f=941MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 0.5 5.5 43 LIMITS TYP MAX. 10 1 2.5 6 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD05MMP1 MITSUBISHI ELECTRIC 1/7 1st Jun. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE CHANNEL DISSIPATION Pch(W 60 Vgs-Ids CHARACTERISTICS 8 Ta=+25°C Vds=10V *PCB: Glass epoxy (t=0.8 mm) Thermal sheet: GELTEC COOH-4000(0.5) 50 6 Ids(A),gm(S) 40 30 On PCB with Termal sheet and Heat-sink 20 4 GM 2 10 0 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(deg:C.) 200 0 Vds-Ids CHARACTERISTICS Vgs=4.5V 5 120 5 Vgs=4.0V 4 3 Ciss(pF) 6 Ids(A) 4 Ta=+25°C f=1MHz 140 7 100 80 60 Vgs=3.5V 40 2 1 20 Vgs=3.0V 0 0 0 1 2 3 4 5 Vds(V) 6 7 8 9 0 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 20 160 Ta=+25°C f=1MHz 140 Ta=+25°C f=1MHz 18 16 120 14 100 Crss(pF) Coss(pF) 2 3 Vgs(V) 160 Vgs=5.0V Ta=+25°C 8 1 Vds VS. Ciss CHARACTERISTICS 9 80 60 12 10 8 6 40 4 20 2 0 0 0 RD05MMP1 Ids 5 10 Vds(V) 15 20 0 MITSUBISHI ELECTRIC 2/7 5 10 Vds(V) 15 20 1st Jun. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=941MHz Pin-Po CHARACTERISTICS @f=941MHz 80 20 ηｄ 20 40 Gp Pout(W) , Idd(A) 15 60 30 ηd(%) Po(dBm) , Gp(dB) , Idd(A) Ta=25°C f=941MHz Vdd=7.2V Idq=1.0A 80 Po 10 30 20 5 Idd 0 5 10 15 20 25 Pin(dBm) 30 0.0 1.0 Pin(W) Vgs-Ids CHARACTORISTICS 2 8 5 10 Ta=25°C f=941MHz Pin=0.7W Idq=1.0A Zg=ZI=50 ohm Po 4 4 2 Idd +75°C 6 Ids(A),gm(S) 3 6 +25°C -25°C Vds=10V Tc=-25~+75°C Idd(A) Po(W) 0.5 10 0 1.5 0 35 Vdd-Po CHARACTERISTICS @f=941MHz 8 40 Po Ｉｄｄ 0 60 ηd 50 20 10 70 ηd(%) Ta=+25°C f=941MHz Vdd=7.2V Idq=1.0A 40 4 2 2 1 0 0 4 RD05MMP1 6 8 Vdd(V) 10 12 0 0 1 2 3 4 5 Vgs(V) MITSUBISHI ELECTRIC 3/7 1st Jun. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W TEST CIRCUIT (f=941MHz) Vgg Vdd C1 C2 4.7k Ohm 27.5mm 12pF 7.5mm 22uF,50V 19mm W W 19mm RD05MMP1 941MHz 10pF L1 1.5mm RF-in 1.0mm 1.0mm 1.0mm 13mm 23.0mm RF-out 120pF 120pF 6pF 10pF 12pF Note:Board material= glass-Epoxy Substrate Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm 7pF 4pF L1:24.4nH, Enameled wire 5Turns,D:0.23mm,1.37mm(outside diameter) C1,C2:100pF,1000pF in parallel W:Line width=1.0mm RD05MMP1 MITSUBISHI ELECTRIC 4/7 1st Jun. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W RD05MMP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA) Freq. [MHz] 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 RD05MMP1 S11 (mag) 0.841 0.845 0.846 0.848 0.848 0.852 0.858 0.861 0.866 0.872 0.877 0.878 0.880 0.886 0.891 0.897 0.900 0.904 0.905 0.907 0.913 0.918 0.920 0.920 0.925 0.925 0.927 0.931 0.929 0.936 0.936 0.935 0.935 0.933 0.938 0.943 0.943 S21 (ang) -169.5 -171.5 -172.4 -173.3 -173.7 -174.5 -174.9 -175.2 -175.3 -175.5 -175.5 -176.2 -176.6 -177.1 -177.2 -177.2 -177.3 -177.6 -178.1 -178.6 -178.9 -178.9 -178.9 -179.1 -179.5 179.8 179.5 179.2 179.3 179.2 179.0 178.5 178.1 177.9 177.8 177.8 177.5 (mag) 7.706 6.148 5.024 4.240 3.669 3.227 2.856 2.543 2.279 2.068 1.886 1.735 1.584 1.456 1.343 1.249 1.164 1.086 1.010 0.945 0.889 0.833 0.786 0.741 0.698 0.660 0.625 0.595 0.565 0.537 0.513 0.488 0.469 0.446 0.426 0.404 0.388 S12 (ang) 82.9 78.7 75.0 72.0 69.4 66.5 63.6 60.8 58.6 56.5 54.1 51.5 49.3 47.4 45.9 44.1 42.2 40.3 38.7 37.2 35.8 34.6 33.2 31.9 30.6 29.4 28.3 27.1 26.3 25.4 24.6 23.6 22.6 21.7 20.3 20.3 19.9 (mag) 0.020 0.020 0.019 0.018 0.017 0.017 0.017 0.016 0.015 0.014 0.013 0.013 0.012 0.011 0.011 0.011 0.010 0.010 0.010 0.010 0.011 0.011 0.011 0.012 0.012 0.013 0.013 0.014 0.015 0.016 0.017 0.019 0.020 0.023 0.024 0.019 0.019 S22 (ang) -3.4 -5.0 -6.5 -6.6 -7.1 -8.5 -8.9 -8.7 -8.2 -3.2 -4.3 -3.6 -0.8 2.0 7.3 10.5 16.6 19.9 25.6 30.6 35.9 40.4 46.3 49.2 51.0 57.5 58.5 60.4 62.2 67.1 67.9 68.4 67.0 64.2 52.9 51.8 61.8 MITSUBISHI ELECTRIC 5/7 (mag) 0.806 0.817 0.810 0.817 0.822 0.835 0.841 0.838 0.840 0.849 0.858 0.868 0.869 0.868 0.874 0.880 0.886 0.893 0.893 0.897 0.901 0.908 0.911 0.909 0.915 0.916 0.917 0.921 0.925 0.924 0.923 0.921 0.922 0.919 0.906 0.920 0.933 (ang) -171.5 -172.9 -174.2 -174.7 -175.0 -175.1 -175.3 -175.8 -176.2 -176.4 -176.8 -177.0 -177.4 -177.5 -177.8 -178.2 -178.7 -179.1 -179.0 -179.4 -179.9 179.6 179.2 179.0 178.6 178.4 177.9 177.4 177.0 176.7 176.6 176.3 175.5 175.0 175.4 176.6 176.0 1st Jun. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W RD05MMP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA) Freq. [MHz] 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 RD05MMP1 S11 (mag) 0.878 0.884 0.880 0.877 0.879 0.888 0.888 0.884 0.884 0.891 0.893 0.897 0.897 0.896 0.902 0.903 0.906 0.905 0.906 0.910 0.914 0.915 0.916 0.917 0.919 0.921 0.925 0.924 0.926 0.927 0.929 0.929 0.931 0.930 0.928 0.932 0.937 S21 (ang) -174.2 -175.6 -176.9 -177.4 -177.7 -178.2 -178.7 -179.1 -179.2 -179.6 -179.7 179.8 179.7 179.6 179.3 178.9 178.7 178.5 178.4 178.2 177.9 177.5 177.3 177.3 177.2 176.9 176.6 176.5 176.3 176.1 175.8 175.6 175.5 175.2 175.2 174.8 174.8 (mag) 7.474 6.046 4.919 4.153 3.636 3.246 2.912 2.598 2.351 2.152 1.995 1.849 1.708 1.580 1.475 1.388 1.308 1.222 1.152 1.086 1.030 0.978 0.928 0.877 0.832 0.798 0.759 0.725 0.694 0.661 0.634 0.611 0.585 0.562 0.539 0.518 0.496 S12 (ang) 85.7 81.9 78.9 77.5 76.1 73.8 71.1 69.0 67.4 66.0 64.1 62.2 60.0 58.5 57.1 55.6 53.7 52.1 50.6 49.4 48.2 46.6 45.1 43.8 43.0 41.7 40.5 39.2 38.3 37.2 36.5 35.5 34.3 33.4 32.6 31.9 31.1 (mag) 0.014 0.014 0.014 0.013 0.013 0.013 0.013 0.012 0.012 0.012 0.012 0.011 0.012 0.012 0.012 0.012 0.012 0.012 0.012 0.012 0.012 0.013 0.013 0.014 0.015 0.015 0.015 0.016 0.016 0.017 0.018 0.019 0.019 0.020 0.021 0.022 0.022 S22 (ang) 4.3 2.9 3.3 4.7 8.8 4.2 7.9 9.1 11.5 13.3 18.1 16.1 20.8 25.7 26.7 30.8 33.2 35.6 38.7 42.5 45.7 46.2 52.5 53.1 55.3 56.8 59.3 59.2 62.2 63.6 64.2 65.1 66.8 66.6 65.2 67.9 68.8 MITSUBISHI ELECTRIC 6/7 (mag) 0.869 0.865 0.865 0.872 0.873 0.875 0.874 0.869 0.872 0.882 0.884 0.886 0.883 0.883 0.886 0.892 0.893 0.894 0.896 0.898 0.902 0.906 0.906 0.906 0.905 0.908 0.911 0.916 0.916 0.921 0.918 0.917 0.921 0.923 0.928 0.930 0.926 (ang) -176.3 -176.9 -177.5 -177.9 -178.3 -178.5 -178.6 -178.8 -178.9 -179.2 -179.4 -179.5 -179.3 -179.6 -179.7 180.0 179.9 179.8 179.7 179.6 179.2 179.1 179.0 179.1 178.8 178.5 178.1 177.9 178.0 178.1 177.9 177.4 177.0 176.8 176.9 177.3 177.0 1st Jun. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Warning! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD05MMP1 MITSUBISHI ELECTRIC 7/7 1st Jun. 2006