VSK.F180..P Series Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 180 A FEATURES • Fast turn-off thyristor • Fast recovery diode RoHS • High surge capability COMPLIANT • Electrically isolated baseplate • 3000 VRMS isolating voltage • Industrial standard package • Lead (Pb)-free • UL E78996 approved MAGN-A-PAKTM DESCRIPTION PRODUCT SUMMARY IT(AV) 180 A These series of MAGN-A-PAKTM modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV) TC VALUES UNITS 180 A 85 °C 400 IT(RMS) ITSM I2 t 50 Hz 7130 60 Hz 7470 50 Hz 255 60 Hz 232 I2√t 2550 tq 20/25 trr 2 VDRM/VRRM Range TJ A kA2s kA2√s µs Up to 1200 V - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VSK.F180- VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 08 800 800 12 1200 1200 Document Number: 93685 Revision: 22-Apr-08 For technical questions, contact: [email protected] IRRM/IDRM MAXIMUM AT TJ = 125 °C mA 50 www.vishay.com 1 VSK.F180..P Series Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 180 A CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180° el ITM 100 µs 180° el 50 Hz 370 530 565 800 2400 3150 400 Hz 435 650 670 1000 1540 2050 2500 Hz 290 430 490 720 610 830 5000 Hz 240 345 390 540 390 540 10 000 Hz 170 270 290 390 - Recovery voltage Vr Voltage before turn-on Vd Case temperature 50 50 80 % VDRM 80 % VDRM 80 % VDRM 50 - - 85 Equivalent values for RC circuit 60 85 10/0.47 60 A - 50 Rise of on-state current dl/dt UNITS A/µs 85 10/0.47 V 60 °C Ω/µF 10/0.47 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum RMS current IT(RMS) TEST CONDITIONS 180° conduction, half sine wave As AC switch t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t VALUES UNITS 180 A 85 °C 400 7130 No voltage reapplied 100 % VRRM reapplied No voltage reapplied 7470 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 to 10 ms, no voltage reapplied 6280 255 232 180 Low level value or threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.30 VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.38 Low level value on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.90 High level value on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.71 Ipk = 600 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.84 VTM Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 Ω, Ig = 1A 1000 www.vishay.com 2 For technical questions, contact: [email protected] kA2s 164 2550 High level value of threshold voltage Maximum on-state voltage drop A 6000 kA2√s V mΩ V mA Document Number: 93685 Revision: 22-Apr-08 VSK.F180..P Series Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 180 A Vishay High Power Products SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise dI/dt TEST CONDITIONS VALUES K Gate drive 20 V, 20 Ω, tr ≤ 1 ms, VD = 80 % VDRM TJ = 25 °C Maximum recovery time trr ITM = 350 A, dI/dt = - 25 A/µs, VR = 50 V, TJ = 25 °C Maximum turn-off time tq ITM = 750 A; TJ = 125 °C; dI/dt = - 25 A/µs; VR = 50 V; dV/dt = 400 V/µs linear to 80 % VDRM J 800 UNITS A/µs 2 20 25 µs BLOCKING PARAMETER SYMBOL Maximum critical rate of rise of off-state voltage TEST CONDITIONS VALUES UNITS dV/dt TJ = 125 °C, exponential to 67 % VDRM 1000 V/µs RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 °C, rated VDRM/VRRM applied 50 mA VALUES UNITS TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum peak average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak negative gate voltage - VGM Maximum DC gate current required to trigger IGT DC gate voltage required to trigger VGT DC gate current not to trigger IGD DC gate voltage not to trigger VGD TEST CONDITIONS f = 50 Hz, d% = 50 60 TJ = 125 °C, f = 50 Hz, d% = 50 10 TJ = 125 °C, tp ≤ 5 ms TJ = 25 °C, Vak 12 V, Ra = 6 TJ = 125 °C, rated VDRM applied W 10 A 5 V 200 mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case per junction RthJC DC operation 0.125 Maximuml thermal resistance, case to heatsink per module RthCS Mounting surface, flat and greased 0.02 Mounting torque ± 10 % Approximate weight Document Number: 93685 Revision: 22-Apr-08 °C K/W MAP to heatsink busbar to MAP Amounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is not recommended, busbar should be used and restrained during tightening. Threads must be lubricated with a compound. For technical questions, contact: [email protected] 4 to 6 (35 to 53) N·m (lbf · in) 500 g 17.8 oz. www.vishay.com 3 VSK.F180..P Series Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 180 A ΔRthJC CONDUCTION CONDUCTIONS ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.009 0.006 120° 0.010 0.011 90° 0.014 0.015 60° 0.020 0.020 30° 0.032 0.033 TEST CONDITIONS UNITS TJ = 125 °C K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 350 VSK.F180.. Series R thJC (DC) = 0.125 K/W 120 110 C o n d u ctio n A n g le 100 90 30° 80 60° 90° 120° 70 180° 60 0 40 80 120 160 200 M axim um Ave rag e O n -state Pow er Lo ss (W ) M a xim um A llo w a ble C ase Tem pera ture (°C ) 130 1 80° 1 20° 90° 60° 30° 300 250 200 RM S Lim it 150 C ond uctio n An gle 100 VSK.F1 80 .. Series Per Ju n ction T J = 1 25 °C 50 0 0 Fig. 1 - Current Ratings Characteristics C o n d u c tio n Pe rio d 90 3 0° 6 0° 80 9 0° 1 2 0° 70 1 80° DC 60 0 50 100 150 200 250 300 Averag e O n-state C urren t (A) Fig. 2 - Current Ratings Characteristics www.vishay.com 4 80 100 120 140 160 180 Fig. 3 - On-State Power Loss Characteristics M axim um Av erag e O n-state Po w e r Loss (W ) M ax im um Allow a ble C ase Tem pera ture (°C ) 110 100 60 450 VSK.F1 8 0 .. Se ries R thJC (D C ) = 0 .1 2 5 K /W 120 40 A ve ra g e O n-sta te C urre n t (A) Averag e O n -state C urren t (A ) 130 20 DC 180° 120° 90° 60° 30° 400 350 300 250 200 RM S Lim it C on d u c tio n Pe riod 150 100 VSK.F18 0.. Series Per Junction T J = 12 5 °C 50 0 0 50 100 150 200 250 300 A verag e O n-sta te C urre n t (A ) Fig. 4 - On-State Power Loss Characteristics For technical questions, contact: [email protected] Document Number: 93685 Revision: 22-Apr-08 VSK.F180..P Series Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 180 A 1 6500 A t A ny Rate d Loa d C o nd itio n A nd W ith Rate d V R RM A p plie d Fo llo w ing Surg e . In itial T J = 125 °C @ 60 H z 0.0083 s @ 50 H z 0.0100 s 6000 5500 5000 4500 4000 3500 VSK.F18 0.. S eries Pe r Jun ctio n 3000 1 10 Ste a dy Sta te V a lue: Transient Therm al Im pedanc e ZthJC (K/W ) Pea k Ha lf Sine W a ve O n -state C urren t (A) Vishay High Power Products R thJ C = 0.125 K/W (D C O p eratio n) 0.1 0.01 VSK.F180 .. Series Per Junctio n 0.001 0.001 100 Nu m b er O f E qu a l Am plitu d e Half C yc le C u r re nt Pu lse s (N) 1 10 100 Fig. 8 - Thermal Impedance ZthJC Characteristics 320 M a xim um No n Rep etitiv e Surg e C urrent Vers us Pulse Tra in D ura tio n . C ontro l O f C o nduction May Not Be Maintained. In itial T J = 125 °C N o V o lta g e R e a p p lie d Ra te d VRR M R e a pp lie d 7000 6500 6000 5500 5000 4500 4000 3500 VSK.F180.. Series Pe r Jun ctio n 3000 2500 0 .0 1 0 .1 1 M axim u m Re verse Rec ove ry C h arg e - Q rr (µC ) 7500 Pe a k H alf Sin e W av e O n-state C urre n t (A ) 0.1 Sq u are W a ve Pulse D ura tio n (s) Fig. 5 - Maximum Non-Repetitive Surge Current Pu lse Train D uration (s) I TM = 1000 A 500 A 300 A 200 A 100 A 300 280 260 240 220 200 180 160 140 120 VSK.F 180.. Se ries T J = 125 °C 100 80 10 20 30 40 50 60 70 80 90 100 Ra te O f Fa ll O f Fo rw a rd C urre n t - d i/d t (A/µs) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 9 - Reverse Recovery Charge Characteristics 10000 180 1000 T J = 25 °C T J = 12 5 °C VSK.F1 80.. Series Per Ju n ctio n 100 1 2 3 4 5 6 7 In sta n ta n e o us O n -sta te V olta g e (V ) Fig. 7 - On-State Voltage Drop Characteristics Document Number: 93685 Revision: 22-Apr-08 M axim um Re verse Rec o very C urre nt - Irr (A) Instan ta neous O n -state C urren t (A ) 0.01 I TM= 1000A 5 00A 3 00A 2 00A 1 00A 160 140 120 100 80 60 VSK.F180.. Series T J = 125 °C 40 20 10 20 30 40 50 60 70 80 90 100 Rate O f Fall O f Fo rw a rd C urren t - d i/dt (A/µs) Fig. 10 - Reverse Recovery Current Characteristics For technical questions, contact: [email protected] www.vishay.com 5 VSK.F180..P Series Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 180 A 1E4 P eak On-state C urre nt ( A) 40 0 150 1E3 1000 400 1000 50 H z 150 50 H z 2 50 0 2 50 0 5 00 0 5 00 0 1E2 tp Snub b er circuit R s = 10 ohm s C s = 0.47 µF V D = 80% V D R M VSK .F180.. Serie s Sinuso id a l p ulse T C = 85 °C 1E1 1E1 1E2 tp 1E4 1E4 1E3 Snub b e r circ uit R s = 10 ohm s C s = 0.47 µF V D = 80% V D RM VSK .F 180.. Series Sinusoid a l pulse T C = 60 °C 1E1 1E1 1E2 1E3 1E4 Pulse Basewid th (µs) Pulse Ba sewid th (µs) Fig. 11 - Frequency Characteristics Pea k On -sta te C urrent (A ) 1E4 50 H z 50 H z 150 1E3 1 00 0 150 40 0 400 1 00 0 2 50 0 2 50 0 5 00 0 5000 1E2 tp Snub b er circuit R s = 10 ohm s C s = 0.47 µF V D = 80% V D R M VSK .F180.. Series Tra p ezo id a l p ulse T C = 8 5 °C d i/d t 50A/µs 1E1 1E1 1E2 tp 1E41E4 1E3 Snub b er circuit R s = 10 ohm s C s = 0.47 µF V D= 80% V D RM VSK .F180.. Series Tra p ezoid a l p ulse T C = 85 °C d i/d t 100A/µs 1E1 E1 1E2 1E3 1E4 Pulse Base w idth (µs) Pulse Base w id th (µs) Fig. 12 - Frequency Characteristics 1E4 P eak O n -sta te C urren t (A ) 50 H z 50 H z 1 50 150 40 0 1E3 400 1 00 0 1 00 0 2 50 0 2 50 0 5 00 0 5000 1E2 tp 1E1 1E1 Snub b er circuit R s = 10 ohm s C s = 0.47 µF V D = 80% V D R M VSK .F1 80.. Se rie s Tra p ezoid a l p ulse T C = 60 °C d i/d t 50A/µs 1E2 1E3 1E41E4 tp Snub b e r circuit R s = 10 ohm s C s = 0.47 µF V D = 80% V D R M VSK .F 180.. Series Tra p ezoid a l p ulse T C = 60 °C d i/d t 100A/µs 1E1 1E2 1E3 1E4 Pulse Ba se w idth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93685 Revision: 22-Apr-08 VSK.F180..P Series Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 180 A Vishay High Power Products 1E4 10 jou les p er p u lse 5 10 jou les p er p ulse 2 .5 5 2 .5 P ea k O n -state C urre n t ( A) 1 1 0 .5 0 .2 5 1E3 0 .5 0 .25 0 .1 0 .1 0 .0 5 0 .0 5 1E2 tp VSK.F180.. Series Tra p ezo id a l p ulse d i/d t 50A /µs VSK.F 180.. Series Sinuso id a l p ulse 1E1 1E1 tp 1E2 1E1 E1 1E41E4 1E3 1E2 1E3 1E4 Pulse Ba se w idth (µs) Pulse Base w id th (µs) Fig. 14 - Maximum On-State Energy Power Loss Characteristics Recta n g u lar g a te p u lse a ) R eco m m en ded lo a d lin e fo r ra ted d i/d t : 1 0V , 1 0o hm s b ) Reco m m en d ed lo a d line fo r <= 3 0% ra ted d i/d t : 1 0V , 20 o h m s (1) (2) (3) (4) PG M PG M PG M PG M = = = = 8W , tp = 25m s 20W , tp = 1m s 40W , tp = 5m s 80W , tp = 2.5m s 10 (a ) Tj=125 °C 1 Tj=-40 °C (b ) Tj=25 °C Instantaneo us G ate Voltage (V) 100 (1) (2) (3) (4) VGD IG D 0.1 0 .0 1 VSK.F180.. Serie s 0 .1 Fre que ncy Lim ite d by PG (AV) 1 10 1 00 Instantaneo us G ate C urre nt (A) Fig. 15 - Gate Characteristics Document Number: 93685 Revision: 22-Apr-08 For technical questions, contact: [email protected] www.vishay.com 7 VSK.F180..P Series Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 180 A ORDERING INFORMATION TABLE Device code VSK T F 180 1 2 3 4 - 12 H K P 5 6 7 8 1 - Module type 2 - Circuit configuration 3 - Fast SCR 4 - Current rating: IT(AV) x 10 rounded 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - dV/dt code: H ≤ 400 V/µs 7 - tq code: K ≤ 20 µs J ≤ 25 µs 8 - P = Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION VSKTF.. VSKHF.. ~ ~ - - - VSKUF.. - - + + K1 G1 G2 K2 - - K1 G1 - - + + - VSKVF.. + ~ ~ + + K1 G1 G2 K2 + ~ ~ + + VSKLF.. G2 K2 VSKKF.. - + + K1 G1 G2 K2 + - - VSKNF.. + - - - + + + G2 K2 + K1 G1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 http://www.vishay.com/doc?95086 For technical questions, contact: [email protected] Document Number: 93685 Revision: 22-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1