FDC86244 N-Channel Power Trench® MOSFET 150 V, 2.3 A, 144 mΩ Features General Description Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Applications Fast switching speed Load Switch 100% UIL Tested Synchronous Rectifier RoHS Compliant Primary Switch S D S 4 3 G D 5 2 D D 6 1 D D G D Pin 1 D SuperSOTTM -6 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed PD TJ, TSTG Units V ±20 V 2.3 10 Single Pulse Avalanche Energy EAS Ratings 150 (Note 3) 12 Power Dissipation (Note 1a) 1.6 Power Dissipation (Note 1b) 0.8 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 30 (Note 1a) 78 °C/W Package Marking and Ordering Information Device Marking .244 Device FDC86244 ©2010 Fairchild Semiconductor Corporation FDC86244 Rev.C Package SSOT-6 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDC86244 N-Channel Power Trench® MOSFET November 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V 150 V 103 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 2.3 A 113 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 1.9 A 128 188 VGS = 10 V, ID = 2.3 A, TJ = 125 °C 214 273 gFS Forward Transconductance 2.0 2.5 -9 VDD = 5 V, ID = 2.3 A mV/°C 144 6 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 75 V, VGS = 0 V, f = 1 MHz 260 345 pF 32 45 pF 1.7 5 pF Ω 1.3 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 75 V, ID = 2.3 A, VGS = 10 V, RGEN = 6 Ω Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 5 V Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 75 V ID = 2.3 A 4.7 10 ns 1.4 10 ns 10 20 ns 3.1 10 ns 4.2 6 nC 2.4 4 nC 1.0 nC 1.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.3 A IF = 2.3 A, di/dt = 100 A/μs (Note 2) 0.8 1.3 V 45 73 ns 33 53 nC NOTES: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.175 °C/W when mounted on a minimum pad of 2 oz copper a. 78 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. Starting TJ = 25 oC, L = 1.0 mH, IAS = 5.0 A, VDD = 135 V, VGS = 10 V. ©2010 Fairchild Semiconductor Corporation FDC86244 Rev.C 2 www.fairchildsemi.com FDC86244 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 10 VGS = 6 V 8 VGS = 5 V 6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 4 VGS = 4.5 V 2 0 VGS = 4 V 0 1 2 3 4 VGS = 4 V VGS = 4.5 V 4 VGS = 5 V 3 2 VGS = 6 V 1 0 5 0 2 Figure 1. On-Region Characteristics 8 10 500 ID = 2.3 A VGS = 10 V 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.2 10 300 TJ = 125 oC 200 TJ = 25 oC 100 4 6 8 10 10 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V 6 TJ = 150 oC 4 TJ = 25 oC 2 TJ = -55 oC 3 ID = 2.3 A Figure 4. On-Resistance vs Gate to Source Voltage 8 2 400 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 4 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 0 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 4 5 VGS = 0 V 1 TJ = 25 oC 0.1 0.01 0.001 0.2 6 TJ = 150 oC TJ = -55 oC 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2010 Fairchild Semiconductor Corporation FDC86244 Rev.C 3 1.2 www.fairchildsemi.com FDC86244 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 400 ID = 2.3 A VDD = 50 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 VDD = 100 V 4 100 Coss 10 2 f = 1 MHz VGS = 0 V 0 0 1 2 3 4 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 7 2.5 ID, DRAIN CURRENT (A) 6 5 TJ = 25 oC 4 TJ = 100 oC 3 TJ = 125 oC 2 2.0 VGS = 10 V 1.5 VGS = 6 V 1.0 0.5 o RθJA = 78 C/W 1 0.01 0.1 1 0.0 25 2 50 125 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) 20 10 100 us 1 1 ms THIS AREA IS LIMITED BY rDS(on) 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 0.01 1s 10 s RθJA = 175 oC/W DC TA = 25 oC 0.001 100 TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 0.1 75 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) IAS, AVALANCHE CURRENT (A) Crss 1 0.1 5 0.1 1 10 100 500 TA = 25 oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDC86244 Rev.C SINGLE PULSE RθJA = 175 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDC86244 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 175 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Juncton-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDC86244 Rev.C 5 www.fairchildsemi.com FDC86244 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDC86244 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDC86244 Rev.C 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 ©2010 Fairchild Semiconductor Corporation FDC86244 Rev.C 7 www.fairchildsemi.com FDC86244 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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