FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 mΩ Features General Description Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A This Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A Semiconductor‘s advanced Power Trench® process that has High performance trench technology for extremely low rDS(on) been optimized for N-Channel MOSFET is produced using Fairchild rDS(on), switching performance and ruggedness. High power and current handling capability in a widely used surface mount package Applications 100% UIL Tested Synchronous Rectifier RoHS Compliant Primary Switch For Bridge Topology D D D D G D 5 4 D 6 3 S D 7 2 S D 8 1 S G SO-8 S S Pin 1 S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Ratings 100 Units V VGS Gate to Source Voltage ±20 V Drain Current -Continuous 3.4 ID Parameter -Pulsed 15 Single Pulse Avalanche Energy EAS PD TJ, TSTG (Note 3) 13 Power Dissipation TA = 25 °C (Note 1a) 5.0 Power Dissipation TA = 25 °C (Note 1b) 2.5 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 2.5 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDS86106 Device FDS86106 ©2011 Fairchild Semiconductor Corporation FDS86106 Rev. C2 Package SO-8 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDS86106 N-Channel Power Trench® MOSFET July 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 67 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2 2.9 -9 mV/°C VGS = 10 V, ID = 3.4 A 83 105 VGS = 6 V, ID = 2.7 A 115 171 VGS = 10 V, ID = 3.4 A, TJ = 125 °C 143 177 VDS = 10 V, ID = 3.4 A 6 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 156 208 pF 47 62 pF 2 3 pF Ω 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 50 V, ID = 3.4 A, VGS = 10 V, RGEN = 6 Ω Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 5 V Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V ID = 3.4 A 5 10 ns 2 10 ns 8 15 ns 2 10 ns 3 4 nC 1.6 2.3 nC 0.8 nC 0.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 3.4 A (Note 2) 0.86 1.3 VGS = 0 V, IS = 2.1 A (Note 2) 0.83 1.2 IF = 3.4 A, di/dt = 100 A/μs V 34 54 ns 22 35 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b) 125 °C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. Starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V. ©2011 Fairchild Semiconductor Corporation FDS86106 Rev. C2 2 www.fairchildsemi.com FDS86106 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 ID, DRAIN CURRENT (A) VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 15 VGS = 7 V 12 VGS = 6 V 9 VGS = 5.5 V 6 VGS = 5 V 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 5 V VGS = 5.5 V 4 VGS = 6 V 3 VGS = 7 V 2 1 0 5 0 3 Figure 1. On-Region Characteristics rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 IS, REVERSE DRAIN CURRENT (A) 12 VDS = 5 V 9 6 TJ = 25 oC 3 TJ = -55 oC 0 4 6 8 300 TJ = 125 oC 200 100 TJ = 25 oC 5 6 7 8 9 10 20 10 VGS = 0 V TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.2 10 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDS86106 Rev. C2 ID = 3.4 A Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ = 150 oC 400 VGS, GATE TO SOURCE VOLTAGE (V) 15 ID, DRAIN CURRENT (A) 15 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature 2 12 500 ID = 3.4 A VGS = 10 V -50 9 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 0.6 -75 6 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 1.8 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS86106 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 300 ID = 3.4 A VDD = 50 V Ciss 100 8 VDD = 25 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 4 Coss 10 Crss f = 1 MHz VGS = 0 V 2 0 0 1 2 3 1 0.1 4 1 Figure 7. Gate Charge Characteristics 4 3 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance vs Drain to Source Voltage 4 TJ = 25 oC TJ = 100 oC 2 TJ = 125 oC 3 VGS = 10 V 2 VGS = 6 V 1 o RθJA = 50 C/W 1 0.001 0.01 0.1 1 0 25 2 tAV, TIME IN AVALANCHE (ms) P(PK), PEAK TRANSIENT POWER (W) 1 1 ms 10 ms SINGLE PULSE TJ = MAX RATED 100 ms RθJA = 125 oC/W 1s 10 s TA = 25 oC DC 0.1 125 150 400 100us 0.01 0.01 100 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature THIS AREA IS LIMITED BY rDS(on) 0.1 75 o 30 10 50 TA, Ambient TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 10 100 600 VDS, DRAIN to SOURCE VOLTAGE (V) 10 SINGLE PULSE RθJA = 125 oC/W 1 TA = 25 oC 0.5 -4 10 10 -3 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDS86106 Rev. C2 100 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDS86106 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDS86106 Rev. C2 5 www.fairchildsemi.com FDS86106 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I55 ©2011 Fairchild Semiconductor Corporation FDS86106 Rev. C2 6 www.fairchildsemi.com FDS86106 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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