FDMC2610 N-Channel UltraFET Trench® MOSFET 200V, 9.5A, 200mΩ Features General Description Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A Low Profile - 1mm max in a Power 33 RoHS Compliant Application DC - DC Conversion Bottom Top 8 1 7 6 D D D D 5 G S S S 2 3 4 D 5 4 G D 6 3 S D 7 2 S D 8 1 S Pin 1 MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C ID TJ, TSTG Units V ±20 V 9.5 (Note 1a) -Pulsed PD Ratings 200 2.2 A 15 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 42 (Note 1a) Operating and Storage Junction Temperature Range 2.1 -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 3 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 60 °C/W Package Marking and Ordering Information Device Marking FDMC2610 Device FDMC2610 ©2012 Fairchild Semiconductor Corporation FDMC2610 Rev.C2 Package MLP 3.3x3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC2610 N-Channel UltraFET Trench® MOSFET November 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 200 ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V mV/°C 199 VDS = 160V, VGS = 0V 1 TJ = 125°C 100 VGS = ±20V, VDS = 0V μA ±100 nA 4 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C rDS(on) Drain to Source On Resistance gFS Forward Transconductance 2 3.2 -9.9 mV/°C VGS = 10V, ID = 2.2A 175 200 VGS = 6V, ID = 1.5A 188 215 VGS = 10V, ID = 2.2A , TJ = 125°C 347 397 VDS = 5V, ID = 2.2A mΩ S 7 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 100V, VGS = 0V, f = 1MHz f = 1MHz 720 960 pF 41 55 pF 12 20 pF Ω 0.7 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 100V, ID = 2.2A VGS = 10V, RGEN = 24Ω VGS = 0V to 10V VDD = 100V ID = 2.2A 17 31 ns 13 24 ns 29 47 ns 16 29 ns 12.3 18 nC 3 nC 3.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2.2A (Note 2) IF = 2.2A, di/dt = 100A/μs 0.8 1.2 V 69 104 ns 114 171 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 135°C/W when mounted on a minimum pad of 2 oz copper a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. FDMC2610 Rev.C2 2 www.fairchildsemi.com FDMC2610 N-Channel UltraFET Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 1.8 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX VGS = 7V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 15 VGS = 10V 10 VGS = 6V 5 VGS = 5V VGS = 4.5V 0 0 1 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 VGS = 5V 1.4 1.0 0.8 3 600 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 0 2.0 1.8 1.6 1.4 1.2 1.0 ID =2.2A VGS = 10V 0.8 0.6 0.4 -75 -50 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 9 TJ = 150oC 6 3 2 -55oC 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 Figure 5. Transfer Characteristics FDMC2610 Rev.C2 15 ID = 1.4A PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX TA = 150oC 400 300 TA = 25oC 200 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 12 TJ = 12 500 100 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) TJ = 25oC 6 9 ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 10V 3 2.4 0 VGS = 7V VGS = 6V 1.2 Figure 1. On-Region Characteristics 2.2 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX VGS = 4.5V 20 10 VGS = 0V 1 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC2610 N-Channel UltraFET Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC2610 N-Channel UltraFET Trench® MOSFET 1000 10 Ciss VDD =50V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) Typical Characteristics TJ = 25°C unless otherwise noted VDD = 100V 6 VDD = 150V 4 2 0 0 3 6 9 Qg, GATE CHARGE(nC) 12 100 Coss 10 0.1 15 f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 100 Figure 8. Capacitance vs Drain to Source Voltage 4 3 TJ = 25oC 2 TJ = 125oC 8 VGS = 10V 6 VGS = 6V 4 2 o RθJC = 3 C/W 1 -3 10 -2 -1 0 0 10 10 tAV, TIME IN AVALANCHE(ms) 10 Figure 9. Unclamped Inductive Switching Capability P(PK), PEAK TRANSIENT POWER (W) 10 rDS(on)LIMITED 100us 1 1ms 10ms 0.1 100ms 0.01 SINGLE PULSE TJ = MAX RATED RθJA=135OC 1s DC TA = 25OC 0.001 0.1 1 10 100 700 VDS, DRAIN to SOURCE VOLTAGE (V) 50 75 100 125 o TC, CASE TEMPERATURE ( C) 150 500 TA = 25oC VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK 100 CURRENT AS FOLLOWS: I = I25 150 – T A -----------------------125 10 SINGLE PULSE 1 R 0.5 -4 10 O =135 C θJA -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area FDMC2610 Rev.C2 25 Figure 10. Maximum Continuous Drain Current vs Case Temperature 40 ID, DRAIN CURRENT (A) Crss Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 0.01 0.003 -3 10 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE -2 10 -1 0 1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 2 10 3 10 Figure 13. Transient Thermal Response Curve FDMC2610 Rev.C2 5 www.fairchildsemi.com FDMC2610 N-Channel UltraFET Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC2610 N-Channel UItraFET Trench® MOSFET Dimensional Outline and Pad Layout FDMC2610 Rev.C2 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDMC2610 Rev. C2 7 www.fairchildsemi.com FDMC2610 N-Channel UItraFET Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ F-PFS™ PowerTrench® The Power Franchise® ® PowerXS™ AccuPower™ FRFET® Global Power ResourceSM Programmable Active Droop™ AX-CAP™* ® ® Green Bridge™ QFET BitSiC TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™