ONSEMI CM1250-04QG

Low Capacitance Transient Voltage
Suppressors / ESD Protectors
CM1250-04QG
Features
•
•
•
Low I/O capacitance at 5pF at 0V
In-system ESD protection to ±8kV contact
discharge, per the IEC 61000-4-2
international standard
Compact SMT package saves board space and
facilitates layout in space-critical applications
•
Each I/O pin can withstand over 1000 ESD
strikes*
Block Diagram
*Standard test condition is an IEC61000-4-2 level 4 test circuit with each pin subjected to ±8kV contact discharge for 1000 pulses. Discharges are timed at 1
second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production test to verify that all of the
tested parameters are within spec after the 1000 strikes.
©2010 SCILLC. All rights reserved.
April 2010 Rev. 3
Publication Order Number:
CM1250-04QG/D
CM1250-04QG
Pin Configuration
Pin Descriptions
Pins
Name
Description
(Refer to package / pinout
diagrams)
CHx
The cathode of the respective TVS diode, which should be
connected to the node requiring transient voltage
protection.
(Refer to package / pinout
diagrams)
VN
The anode of the TVS diodes.
Ordering Information
# of Pins
# of Channels
Package
6
4
uDFN-0.4mm
Ordering Part Number1
CM1250-04QG
Note 1: Parts are shipped in Tape and Reel form unless otherwise specified.
Rev.3 | Page 2 of 7 | www.onsemi.com
Part Marking
LS
CM1250-04QG
Absolute Maximum Rating
PARAMETER
Storage Temperature Range
RATING
UNITS
-65 to +150
°C
RATING
UNITS
-40 to +85
°C
Standard Operating Conditions
PARAMETER
Operating Temperature Range
Electrical Operating Characteristics (see Note 1)
SYMBOL
CIN
PARAMETER
CONDITIONS
Channel Input Capacitance
MIN
TYP
MAX
UNITS
TA = 25°C, 0VDC, 1MHz
5
7
pF
TA = 25°C, 2.5VDC, 1MHz
3
pF
0.14
pF
ΔC
Differential Channel I/O to GND
Capacitance
TA = 25°C, 2.5VDC, 1MHz
ILEAK
Leakage Current
VIN = 3.5VDC, TA = 25°C
VSIG
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
I = 5mA, TA = 25°C
I = –5mA, TA = 25°C
6.1
-1.5
Notes 3 and 4; TA = 25°C
±8
kV
Notes 3 and 4 TA = 25°C
±15
kV
IN
VESD
RD
ESD Withstand Voltage
Contact Discharge per IEC 61000-4-2
standard
Human Body Model, MIL-STD-883,
Method 3015
Diode Dynamic Resistance
Forward Conduction
Reverse Conduction
Note 1:
Note 2:
Note 3:
Note 4:
0.10
μA
8.5
-0.4
V
V
TA = 25°C
0.7
2.1
All parameters specified at TA = –40°C to +85°C unless otherwise noted.
Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KW, VN grounded.
Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330W, VN grounded.
These measurements performed with no external capacitor on CHX.
Rev. 3 | Page 3 of 7 | www.onsemi.com
Ω
Ω
CM1250-04QG
Performance Information
Diode Capacitance
Typical diode capacitance with respect to positive TVS cathode voltage (reverse voltage across the diode) is given in
Figure 1.
Figure 1. Diode Capacitance vs. Reverse Voltage
Typical High Current Diode Characteristics
Measurements are made in pulsed mode with a nominal pulse width of 0.7ms.
Typical Input Characterictics
(Pulse-mode measurements, pulse width = 0.7ms nominal)
Rev.3 | Page 4 of 7 | www.onsemi.com
CM1250-04QG
CM1250-04QG Mechanical Specifications
The 6-lead uDFN-0.4mm CM1250-04QG package dimensions are shown below.
Package Specifications
Package
uDFN
JEDEC No.
MO-229C*
Leads
6
Millimeters
Inches
Dim
Min
Min
Nom
Max
A
0.450 0.500 0.550 0.018
0.020
0.022
A1
0.000 0.020 0.050
0.000
0.001
0.002
A3
0.100 0.150 0.200
0.004
0.006
0.008
b
0.150 0.200 0.250
0.006
0.008
0.010
D
1.150 1.250 1.350
0.045
0.049
0.053
E
0.900 1.000 1.100
0.035
0.039
0.043
e
0.350 0.400 0.450
0.014
0.016
0.018
L
0.200 0.300 0.400 0.008
# per
tape
and
reel
Nom
Max
0.012
0.016
3000 pieces
Controlling dimension: millimeters
Dimensions for 6-Lead, 0.4mm Pitch uDFN-0.4
Package
Rev. 3 | Page 5 of 7 | www.onsemi.com
CM1250-04QG
Tape and Reel Specifications
PART NUMBER
CM1250-04QG
PACKAGE SIZE
(mm)
POCKET SIZE (mm)
B0 X A0 X K0
TAPE WIDTH
W
REEL
DIAMETER
QTY
PER
REEL
P0
P1
1.25 X 1.00 X 0.50
1.55 X 1.25 X 0.65
8mm
178mm (7")
3000
4mm
4mm
Rev.3 | Page 6 of 7 | www.onsemi.com
CM1250-04QG
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any
products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising
out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical”
parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the
rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to
support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or
use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action
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Rev. 3 | Page 7 of 7 | www.onsemi.com
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