NUP4301MR6T1 Low Capacitance Diode Array for ESD Protection in Four Data Lines NUP4301MR6T1 is a MicroIntegrationt device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). http://onsemi.com Features • Low Capacitance (1.5 pf Maximum Between I/O Lines) • Single Package Integration Design • Provides ESD Protection for JEDEC Standards JESD22 • • • • • 6 Machine Model = Class C Human Body Model = Class 3B Protection for IEC61000−4−2 (Level 4) 8.0 kV (Contact) 15 kV (Air) Ensures Data Line Speed and Integrity Fewer Components and Less Board Space Direct the Transient to Either Positive Side or to the Ground Pb−Free Package is Available 64M G G 1 64 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location. *Date Code orientation may vary depending upon manufacturing location. Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) IF(AV) 715 mA Repetitive Peak Forward Current IFRM 450 mA Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 S IFSM A 2.0 1.0 0.5 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 3 3 MARKING DIAGRAM PIN CONFIGURATION AND SCHEMATIC MAXIMUM RATINGS (Each Diode) (TJ = 25°C unless otherwise noted) Peak Forward Surge Current 2 TSOP−6 CASE 318F PLASTIC USB 1.1 and 2.0 Data Line Protection T1/E1 Secondary IC Protection T3/E3 Secondary IC Protection HDSL, IDSL Secondary IC Protection Video Line Protection Microcontroller Input Protection Base Stations I2C Bus Protection Rating 4 1 Applications • • • • • • • • 5 1 I/O 1 6 I/O VN 2 5 VP 1/O 3 4 I/O ORDERING INFORMATION Device Package Shipping † NUP4301MR6T1 TSOP−6 3000/Tape & Reel TSOP−6 (Pb−Free) 3000/Tape & Reel NUP4301MR6T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NUP4301MR6T1/D NUP4301MR6T1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RqJA 556 °C/W TL 260 °C Thermal Resistance, Junction−to−Ambient Lead Solder Temperature, Maximum 10 Seconds Duration Junction Temperature TJ −40 to +85 °C Storage Temperature Tstg −55 to +150 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Each Diode) Characteristic Symbol Min Typ Max Unit V(BR) 70 − − Vdc IR − − − − − − 2.5 30 50 mAdc Capacitance (between I/O pins) (VR = 0 V, f = 1.0 MHz) CD − 0.8 1.5 pF Capacitance (between I/O pin and ground) (VR = 0 V, f = 1.0 MHz) CD − 1.6 3 pF VF − − − − − − − − 715 855 1000 1250 mVdc OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 mA) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Curves Applicable to Each Cathode IR , REVERSE CURRENT (μA) 10 TA = 85°C 10 TA = −40°C 1.0 0.1 TA = 25°C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 0 Figure 1. Forward Voltage 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Leakage Current 1.75 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance http://onsemi.com 2 8 50 NUP4301MR6T1 PACKAGE DIMENSIONS TSOP−6 CASE 318F−05 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. D 6 5 4 2 3 E HE 1 DIM A A1 b c D E e L HE q b e C A 0.05 (0.002) q L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° NUP4301MR6T1 MicroIntegration is a trademarks of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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