Ordering number:ENN2086B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1204/2SD1804 High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Package Dimensions unit:mm 2045B [2SB1204/2SD1804] 2.3 5.5 · Low collector-to-emitter saturation voltage. · High current and high fT. · Excellent linearity of hFE. · Fast switching time. · Small and slim package making it easy to make 2SB1204/2SD1804-applied sets smaller. 1.5 6.5 5.0 4 0.5 7.0 Features 0.85 0.7 7.5 0.8 1.6 1.2 0.6 0.5 1 2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 3 2.3 2.3 unit:mm 2044B [2SB1204/2SD1804] 6.5 5.0 4 0.5 0.5 2.3 2 2.5 1 0.6 0.8 0.85 1.2 7.0 5.5 1.5 2.3 3 1.2 0 to 0.2 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Semiconductor Co.,Ltd. Semiconductor Company SANYO Electric Co.,Ltd. Bussiness Headquaters http://semicon.sanyo.com/en/network OFFICE Bldg., 1-10, Chome, Ueno, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TOKYOTOKYO OFFICE TokyoTokyo Bldg., 1-10, 1 1Chome, Taito-ku, TOKYO, 110-8534 JAPAN N2503TN (KT)/92098HA (KT)/8309MO/3117AT, TS No.2086–1/5 2SB1204/2SD1804 ( ) : 2SB1204 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)60 V Collector-to-Emitter Voltage VCEO (–)50 V Emitter-to-Base Voltage VEBO IC (–)6 V (–)8 A ICP (–)12 A 1 W Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25˚C 20 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 DC Current Gain hFE1 hFE2 VCE=(–)2V, IC=(–)0.5A VCE=(–)2V, IC=(–)6A Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage fT VCE=(–)5V, IC=(–)1A Cob VCB=(–)10V, f=1MHz VCE(sat) Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Unit (–)1 μA (–)1 μA 400* (130) MHz 180 MHz (95)65 IC=(–)4A, IB=(–)0.2A Turn-ON Time IE=(–)10μA, IC=0 See specified Test Circuit Storage Time tstg See specified Test Circuit tf See specified Test Circuit Fall Time max 35 V(BR)EBO ton Emitter-to-Base Breakdown Voltage typ 70* VBE(sat) IC=(–)4A, IB=(–)0.2A V(BR)CBO IC=(–)10μA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ Base-to-Emitter Saturation Voltage Ratings min pF 200 400 mV (–250) (–500) mV (–)0.95 (–)1.3 V (–)60 V (–)50 V (–)6 V (50) ns (450) ns 500 ns 20 ns * : The 2SB1204/2SD1804 are classified by 0.5A hFE as follows : Rank Q R S T hFE 70 to 140 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR RB RL 50Ω + 100μF + 470μF VBE= --5V VCC=25V IC=10IB1= --10IB2=4A (For PNP, the polarity is reversed.) No.2086–2/5 2SB1204/2SD1804 IC -- VCE 2SB1204 From top --160mA --140mA --120mA --100mA --80mA --60mA --6 --40mA --4 --20mA --10mA --2 0 --0.4 --0.8 --1.2 --1.6 --15mA --10mA --5mA --1 --4 --6 2SD1804 mA 25mA 20mA 3 15mA 10mA 2 5mA IB=0 0 2 Collector Current, IC – A --5 5°C 25°C --25 °C --4 6 8 10 --1 ITR09201 IC -- VBE 2SD1804 VCE=2V 8 --6 4 Collector-to-Emitter Voltage, VCE – V 9 --7 2.0 ITR09199 IC -- VCE ITR09200 Ta= 7 Collector Current, IC – A 1.6 0 2SB1204 VCE= --2V --2 1.2 4 --10 IC -- VBE --3 0.8 1 --8 Collector-to-Emitter Voltage, VCE – V 7 6 5 4 3 2 1 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE – V --1.2 0 2SB1204 VCE= --2V 5 100 7 5 2 3 5 7 --1.0 2 Collector Current, IC – A 3 5 7 --10 2 ITR09204 Ta=75°C 25°C --25°C 100 7 5 2 5 7 --0.1 1.2 ITR09203 2SD1804 VCE=2V 2 3 3 1.0 hFE -- IC 3 2 2 0.8 5 3 10 --0.01 0.6 7 DC Current Gain, hFE Ta=75°C 25°C --25°C 2 0.4 Base-to-Emitter Voltage, VBE – V 1000 7 3 0.2 ITR09202 hFE -- IC 1000 DC Current Gain, hFE IB=0 0.4 5 IB=0 0 --8 10mA Collector-to-Emitter Voltage, VCE – V Collector Current, IC – A Collector Current, IC – A --3 --9 20mA 30 --20mA --2 4 ITR09198 --30mA --25mA 0 30mA 0 2SB1204 --2 50mA 40mA 0 IC -- VCE --4 6 --2.0 Collector-to-Emitter Voltage, VCE – V --5 8 2 IB=0 0 2SD1804 From top 100mA 90mA 80mA 70mA 60mA Ta= 75°C 25°C --25° C --8 IC -- VCE 10 Collector Current, IC – A Collector Current, IC – A --10 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC – A 3 5 7 10 2 ITR09205 No.2086–3/5 2SB1204/2SD1804 C f T -- IC 5 2SB1204 VCE= --5V 3 2 100 7 5 3 2 Gain-Bandwidth Product, fT – MHz Gain-Bandwidth Product, fT – MHz 5 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 7 5 3 2 100 7 5 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 ITR09207 Cob -- VCB 5 Output Capacitance, Cob -- pF 2 3 Collector Current, IC – A 2SB1204 f=1MHz 3 Output Capacitance, Cob -- pF 100 2 2SD1804 f=1MHz 3 2 100 7 5 3 2 10 10 5 7 --1.0 2 3 5 7 2 --10 3 5 5 7 --100 ITR09208 Collector-to-Base Voltage, VCB -- V 7 2 1.0 5 7 2 10 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 2 --100 7 °C 25 5 C 75° Ta= °C --25 3 2 5 7 100 ITR09209 2SD1804 IC / IB=20 7 3 3 VCE(sat) -- IC 1000 2SB1204 IC / IB=20 3 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC --1000 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 2 7 --10 ITR09206 Cob -- VCB 5 5 3 2 100 7 5 °C 25 3 C Ta=75° --25°C 2 10 --10 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A 5 7 0.01 5 7 --10 ITR09210 3 2 Ta= --25°C 7 25°C 75°C 5 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 ITR09211 VBE(sat) -- IC 2SD1667 2SD1804 IC / IB=20 7 Base-to-Emitter Saturation Voltage, VBE (sat) – V 5 --1.0 3 10 2SB1204 IC / IB=20 7 2 Collector Current, IC – A VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE (sat) – V 3 5 Collector Current, IC – A 5 2SD1804 VCE=5V 10 10 7 C f T -- IC 5 3 2 1.0 Ta= --25°C 7 25°C 75°C 5 3 2 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 2 3 5 7 --10 ITR09212 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC – A 2 3 5 7 10 ITR09213 No.2086–4/5 2SB1204/2SD1804 ASO ICP=12A IC=8A 10 3 2 0m op op era °C 3 2 °C 0.1 7 5 5 =2 Tc 25 ion nT a= t era tio 3 2 s DC 1.0 7 5 DC Collector Current, IC – A 10 7 5 Tc=25°C Single pulse (For PNP, minus sign is omitted.) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 PC -- Ta 24 2SB1204 / 2SD1804 10 1m m s s Collector Dissipation, PC – W 2 2SB1204 / 2SD1804 20 16 12 8 4 No heat sink 1 0 2 3 Collector-to-Emitter Voltage, VCE – V 5 7 100 ITR09214 0 20 40 60 80 100 120 140 Ambient Temperature, Ta – ˚C 160 ITR09215 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2003. Specifications and information herein are subject to change without notice. PS No.2086–5/5