2SB1122 / 2SD1622 Ordering number : EN2040B SANYO Semiconductors DATA SHEET 2SB1122 / 2SD1622 PNP / NPN Epitaxial Planar Silicon Transistors Low-Frequency Power Amplifier Applications Applications • Voltage regulators relay drivers, lamp drivers, electrical equipment. Features • • Adoption of FBET process. Ultrasmall size making it easy to provide high-density hybrid IC’s. Specifications ( ) : 2SB1122 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO (--)60 (--)50 V (--)5 V Collector Current VEBO IC (--)1 A Collector Current (Pulse) ICP (--)2 A Collector Dissipation PC 500 mW Junction Temperature Tj Storage Temperature Tstg Collector-to-Emitter Voltage Emitter-to-Base Voltage Mounted on a ceramic board (250mm2✕0.8mm) V 1.3 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions Ratings min typ max Unit VCB=(--)50V, IE=0A (--)100 nA VEB=(--)4V, IC=0A (--)100 nA Marking 2SB1122 : BE 2SD1622 : DE Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’ s products or equipment. www.semiconductor-sanyo.com/network http://semicon.sanyo.com/en/network 31710EA TK IM / O1003TN (KOTO)/92098HA (KT)/4107KI/9266AT, TS No.2040-1/5 2SB1122 / 2SD1622 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit hFE1 VCE=(--)2V, IC=(--)100mA hFE2 VCE=(--)2V, IC=(--)1A Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)50mA Output Capacitance Cob VCB=(--)10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)500mA, IB=(--)50mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO IC=(--)500mA, IB=(--)50mA IC=(--)10μA, IE=0A (--)60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)5 Turn-ON Time ton See specified Test Circuit. (40)40 Storage Time tstg See specified Test Circuit. (300)350 ns Fall Time tf See specified Test Circuit. (30)30 ns DC Current Gain *: The 2SB1122 / 2SD1622 are classified by 100mA hFE as follows: Rank R S T hFE 100 to 200 Package Dimensions unit : mm (typ) 7007B-004 140 to 280 200 to 400 100* max 560* 30 150 MHz (12)8.5 pF (--180)120 (--500)300 (--)0.9 (--)1.2 mV V V ns U 280 to 560 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT IB1 VR RB OUTPUT IB2 RL 50Ω 50Ω + 100μF + 470μF --5V 25V IC=10IB1= --10IB2=500mA (For PNP, the polarity is reversed) No.2040-2/5 2SB1122 / 2SD1622 IC -- VCE --1.0 2SB1122 mA --1 --0.8 --0.6 --4mA --0.4 --2mA --1mA --0.2 --1 --2 --3 3mA 2mA 0.4 1mA IB=0mA 1 2 3 4 5 Collector-to-Emitter Voltage, VCE -- V ITR08878 IC -- VBE 1200 2SD1622 VCE=2V --800 --600 --400 800 600 400 Ta=7 5°C 25°C --25°C Collector Current, IC -- mA 1000 Ta=7 5°C 25°C --25°C Collector Current, IC -- mA m 10 0.6 ITR08877 2SB1122 VCE= --2V --200 200 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 0 5 100 7 5 3 2 1.0 1.2 ITR08880 2SD1622 VCE=2V 25°C Ta=75°C 3 --25°C 0.8 5 25°C 2 0.6 hFE -- IC 1000 7 DC Current Gain, hFE Ta=75°C 3 0.4 Base-to-Emitter Voltage, VBE -- V 2SB1122 VCE= --2V 7 0.2 ITR08879 hFE -- IC 1000 DC Current Gain, hFE 9m A 0 --1000 2 --25°C 100 7 5 3 2 10 7 10 5 7 5 3 5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 Collector Current, IC -- mA 2 5 3 Output Capacitance, Cob -- pF 2SB1122 100 7 5 3 2 3 5 7 100 2 3 5 7 1000 2 3 ITR08882 Cob -- VCB 5 3 2SD1622 2 Collector Current, IC -- mA VCE=10V 2 7 10 ITR08881 f T -- IC 5 Gain-Bandwidth Product, f T -- MHz 4mA A --5 IC -- VBE --1200 8m 0.8 0 --4 Collector-to-Emitter Voltage, VCE -- V 7m 0.2 IB=0mA 0 6mA 5mA A A --6mA 0 2SD1622 --8mA Collector Current, IC -- A Collector Current, IC -- A 2 --1 IC -- VCE 1.0 0mA f=1MHz 3 2 2SB 11 2SD 22 162 2 10 7 5 3 For PNP, minus sign is omitted 10 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 For PNP, minus sign is omitted 2 5 ITR08883 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 100 ITR08884 No.2040-3/5 2SB1122 / 2SD1622 VCE(sat) -- IC 2SB1122 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 5 3 2 °C 25 --100 7 C 75° Ta= °C --25 5 3 2 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 2 100 °C 25 7 5 5°C 7 Ta= 3 5 --2 °C 2 5 5 3 2 25°C --1.0 Ta= --25°C 7 75°C 5 7 10 2 3 5 7 100 2 3 5 7 1000 2 ITR08886 Collector Current, IC -- mA VBE(sat) -- IC 10 2SD1622 IC / IB=10 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SB1122 IC / IB=10 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 5 7 --1000 2 ITR08885 VBE(sat) -- IC --10 3 5 3 2 25°C 1.0 Ta= --25°C 7 75°C 5 3 2 2 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 7 --1000 2 ITR08887 5 7 5 DC 3 2 op era tio n 0.1 7 5 3 For PNP, minus sign is omitted Ta=25°C Single pulse Mounted on a ceramic board (250mm2✕0.8mm) 2 0.01 5 7 1.0 2 3 5 7 10 2 3 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 2 3 5 7 1000 2 ITR08888 PC -- Ta 2SB1122 / 2SD1622 1.2 Collector Dissipation, PC -- W s s 0m 2 1.3 10 10 IC=1A 1.0 10 1.4 2SB1122 / 2SD1622 ms 7 Collector Current, IC -- mA ASO ICP=2A 1m Collector Current, IC -- A 5 10 5 2 2SD1622 IC / IB=10 7 --10 3 VCE(sat) -- IC 1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1000 M ou nt 1.0 ed on ac er 0.8 am ic bo ar 0.6 d( 25 0.5 No 0.4 heat 0m m2 ✕ 0.8 sink m m ) 0.2 0 5 7 100 ITR08889 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR08890 No.2040-4/5 2SB1122 / 2SD1622 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.2040-5/5