Ordering number : ENN6683 5HP01S P-Channel Silicon MOSFET 5HP01S Ultrahigh Speed Switching Features • • Package Dimensions Low ON-resistance . Ultrahigh-speed switching. 4V drive. unit : mm 2192 [5HP01S] 0.75 0.6 0.4 • Applications 0.3 3 0.8 1.6 0 to 0.1 2 0.5 0.5 1.6 0.1 0.1max 1 0.4 0.2 1 : Gate 2 : Source 3 : Drain Specifications SANYO : SMCP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source V oltage Conditions Ratings VDSS VGSS Gate-to-Source V oltage Drain Current (DC) ID IDP PD Drain Current (Pulse) Allowable Power Dissipation PW≤10µs, duty cycle ≤1% Unit - 50 V ±20 V - 0.07 A - 0.28 A 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg - 55 to +150 °C Electrical Characteristics a t Ta=25°C Parameter Drain-to-Source Breakdown V Symbol oltage Zero-Gate V oltage Drain Current V (BR)DSS IDSS IGSS Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions ID=--1mA, V GS =0 VDS=--50V, V GS=0 VGS =±16V, V DS=0 Ratings min typ max --50 VGS(off) VDS=--10V, I D=--100µA --1 | yfs | VDS=--10V, I D=--40mA 50 RDS(on)1 RDS(on)2 ID=--40mA, V GS =--10V ID=--20mA, V GS =--4V Unit V - 10 µA ±10 µA --2.5 70 V mS 17 22 Ω 23 32 Ω Continued on ne xt pa ge. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12201 TS IM TA-3123 No.6683-1/4 5HP01S Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss VDS=--10V, f=1MHz 6.2 pF Output Capacitance Coss VDS=--10V, f=1MHz 4.0 pF Reverse Transfer Capacitance Crss pF td(on) VDS=--10V, f=1MHz See specified Test Circuit 1.3 Turn-ON Delay Time 13 ns Rise Time tr td(off) See specified Test Circuit 10 ns See specified Test Circuit 100 ns Turn-OFF Delay Time Fall Time tf Qg See specified Test Circuit 150 ns VDS=--10V, V GS =--10V, I D=--70mA 1.32 nC Gate-to-Source Charge Qgs VDS=--10V, V GS =--10V, I D=--70mA 0.17 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, V GS =--10V, I D=--70mA 0.34 Diode Forward V oltage VSD IS=--70mA, V GS =0 Total Gate Charge nC - 0.85 - 1.2 V Marking : XC Switching Time Test Circuit 0V --10V VDD= --25V VIN ID= --40mA RL=625Ω VIN PW=10µs D.C.≤1% D VOUT G 5HP01S 50Ω S ID -- VDS ID -- VGS --0.14 25°C 0V --0.03 --3.0V --0.02 --0.10 VDS= --10V 75°C Drain Current, ID -- A --0.04 --0.01 --0.08 --0.06 --0.04 --0.02 VGS= --2.5V 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 --2.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 40 35 30 --40mA 25 ID= --20mA 20 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 IT00105 --4 --5 --6 IT00104 VGS= --10V 7 5 3 Ta=75°C 2 25°C --25°C 15 10 --2 --3 RDS(on) -- ID 100 Ta=25°C 45 --1 Gate-to-Source Voltage, VGS -- V IT00103 RDS(on) -- VGS 50 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta= -- --6 .0 --0.12 . --4 .0V --0.05 --1 0 Drain Current, ID -- A --0.06 V --8 . 0V --0.07 25°C P.G 10 --0.01 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 IT00106 No.6683-2/4 5HP01S RDS(on) -- ID 1000 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 3 2 100 7 5 Ta=75°C 25°C --25°C 3 2 10 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A 20 15 10 5 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT00108 IF -- VSD VGS = 0 VDS= --10V 2 0.1 5°C 2 Ta= -- 7 5 25°C 75°C 3 --0.1 7 5 3 2 2 2 3 5 7 2 --0.1 --0.01 --0.5 3 Ciss, Coss, Crss -- pF tf 100 7 5 td(off) 3 2 td(on) 10 7 5 tr --0.8 --0.9 --1.0 --1.1 3 2 --1.2 IT00110 Ciss, Coss, Crss -- VDS 100 7 5 VDD= --25V VGS= --10V 3 2 --0.7 Diode Forward Voltage, VSD -- V IT00109 SW Time -- ID 1000 7 5 --0.6 --25°C 2 °C 3 25°C 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 25 3 Drain Current, ID -- A Switching Time, SW Time -- ns V --4 S= G V A, 10V = -20m S = -G ,V ID mA --40 = ID IT00107 7 0.01 --0.01 f=1MHz 3 2 10 7 5 Ciss Coss 3 2 Crss 1.0 7 5 3 2 1.0 --0.01 0.1 2 3 5 7 Drain Current, ID -- A 0 --0.1 IT00111 --10 --15 Allowable Power Dissipation, PD -- W --8 --7 --6 --5 --4 --3 --2 --1 0 --20 --25 --30 --35 --40 --45 --50 IT00112 PD -- Ta 0.20 VDS= --10V ID= --0.07A --9 --5 Drain-to-Source Voltage, VDS -- V VGS -- Qg --10 Gate-to-Sourse Voltage, VGS -- V 30 0 --60 3 yfs -- ID 1.0 35 Ta=7 5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 RDS(on) -- Ta 40 VGS= --4V 0.15 0.10 0.05 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00113 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02381 No.6683-3/4 5HP01S Note on usa ge : Since the 5HP01S is designed f or high-speed s witching a pplica tions, please a void using this de vice in the vicinity of highl y charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice. PS No.6683-4/4