Ordering number : ENN6645 3LP01C P-Channel Silicon MOSFET 3LP01C Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2091A [3LP01C] 0.4 0.16 0 to 0.1 1 : Gate 2 : Source 3 : Drain 0.8 1.1 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 3 0.5 • SANYO : CP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS ±10 V --0.1 A Drain Current (DC) Drain Current (Pulse) ID IDP Allowable Power Dissipation PD PW≤10µs, duty cycle≤1% --0.4 A 0.25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Sourse Leakage Current IGSS VGS(off) yfs Cutoff Voltage Forward Transfer Admittance Conditions ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=±8V, VDS=0 VDS=--10V, ID=--100µA VDS=--10V, ID=--50mA Ratings min typ max --30 Unit V --0.4 --10 µA ±10 µA --1.4 80 110 V mS Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 90100 TS IM TA-1982 No.6645-1/4 3LP01C Continued from preceding page. Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Input Capacitance RDS(on)3 Ciss Ratings Conditions min typ Unit max ID=--50mA, VGS=--4V ID=--30mA, VGS=--2.5V ID=--1mA, VGS=--1.5V 8 10.4 Ω 11 15.4 Ω 27 54 VDS=--10V, f=1MHz 7.5 pF Ω Output Capacitance Coss pF Crss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 5.7 Reverse Transfer Capacitance 1.8 pF Turn-ON Delay Time td(on) See specified Test Circuit 24 ns Rise Time tr td(off) See specified Test Circuit 55 ns See specified Test Circuit 120 ns tf See specified Test Circuit 130 ns Qg VDS=--10V, VGS=--10V, ID=--100mA 1.43 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--100mA 0.18 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--100mA 0.25 Diode Forward Voltage VSD IS=--100mA, VGS=0 0.83 Turn-OFF Delay Time Fall Time Total Gate Charge nC 1.2 V Marking : XA Switching Time Test Circuit 0V --4V VDD= --15V VIN ID= --50mA RL=300Ω VIN PW=10µs D.C.≤1% D VOUT G 3LP01C S ID -- VDS --0.05 --0.04 --0.03 VGS= --1.5V --0.02 °C 25°C --25 --0.12 --0.10 --0.08 --0.06 --0.04 --0.02 --0.01 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 --2.0 0 20 15 50mA ID=30mA 5 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 IT00079 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 IT00078 RDS(on) -- ID VGS= --4V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25 0 --1.0 100 Ta=25°C 10 --0.5 Gate-to-Source Voltage, VGS -- V IT00077 RDS(on) -- VGS 30 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --0.14 Ta= --0.06 Drain Current, ID -- A --0.16 --2.0V --6.0 --0.07 VDS= --10V --0.18 5V . --2 ID -- VGS --0.20 V --0.08 --3 . --4 . 0V --3.5V --0.09 0V --0.10 Drain Current, ID -- A 50Ω 75° C P.G 5 3 2 25°C Ta=75°C 10 7 --25°C 5 3 2 1.0 --0.01 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 IT00080 No.6645-2/4 3LP01C RDS(on) -- ID 100 5 3 25°C Ta=75°C 10 7 --25°C 5 3 2 1.0 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A A 30m V = -V GS A, 50m -I D= 8 V 4.0 -I D= 10 6 4 2 --60 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 5 --25°C 25°C 3 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V 10 Ciss Coss 3 2 Crss 3 IT00082 3 25°C 2 5°C 2 Ta= -- 0.1 75°C 7 5 3 2 2 3 5 7 2 --0.1 3 IT00084 SW Time -- ID VDD= --15V VGS= --4V 5 3 tf 2 td(off) 100 7 5 tr 3 td(on) 2 2 3 5 7 Drain Current, ID -- A Gate-to-Sourse Voltage, VGS -- V 2 2 --1.0 5 --0.1 IT00086 VGS -- Qg --10 3 7 VDS= --10V 10 --0.01 --1.1 5 5 7 VDS= --10V ID= --0.1A --9 5 3 yfs -- ID f=1MHz 7 2 IT00085 7 Ciss, Coss, Crss -- pF --25°C 7 Ciss, Coss, Crss -- VDS 100 2 1000 Switching Time, SW Time -- ns 7 Ta=7 5°C Forward Current, IF -- A --0.1 --0.6 25°C Ta=75°C 3 Drain Current, ID -- A 2 --0.01 --0.5 5 IT00083 VGS=0 2 7 0.01 --0.01 160 IF -- VSD 3 100 Drain Current, ID -- mA Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω , 12 2 1.0 2.5 = -V GS 3 IT00081 16 14 5 10 --0.1 3 RDS(on) -- Ta 18 VGS= --1.5V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 2 RDS(on) -- ID 1000 VGS= --2.5V --8 --7 --6 --5 --4 --3 --2 --1 1.0 0 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT00087 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00088 No.6645-3/4 3LP01C PD -- Ta Allowable Power Dissipation, PD -- W 0.30 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02382 Note on usage : Since the 3LP01C is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2000. Specifications and information herein are subject to change without notice. PS No.6645-4/4