Ordering number:ENN6446 P-Channel Silicon MOSFET MCH6603 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2173 [MCH6603] 0.3 5 2 3 0.65 0.25 1 0.15 4 1.6 6 2.1 · Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. · Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting. 0.25 Features 2.0 0.15 0.85 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% Allowable Power Dissipation Mounted on a ceramic board (900mm2×0.8mm) 1unit Channel Temperature PD Tch Storage Temperature Tstg Unit –50 V ±10 V –0.14 A –0.56 A 0.8 150 W ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS ID=–1mA, VGS=0 IGSS VGS(off) VGS=±8V, VDS=0 | yfs | Static Drain-to-Source On-State Resistance Conditions RDS(on)1 RDS(on)2 RDS(on)3 Ratings min typ –50 –0.4 70 Unit V VDS=–50V, VGS=0 VDS=–10V, ID=–100µA VDS=–10V, ID=–40mA max –10 µA ±10 µA –1.4 110 V mS ID=–40mA, VGS=–4V 18 23 Ω ID=–20mA, VGS=–2.5V ID=–5mA, VGS=–1.5V 20 28 Ω 30 60 Ω Marking : FC Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2458 No.6446-1/4 MCH6603 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss VDS=–10V, f=1MHz 7.4 pF Output Capacitance Coss VDS=–10V, f=1MHz 4.2 pF Reverse Transfer Capacitance Crss 1.3 pF Turn-ON Delay Time td(on) VDS=–10V, f=1MHz See specified Test Circuit 20 ns tr See specified Test Circuit 35 ns td(off) See specified Test Circuit 160 ns tf See specified Test Circuit 150 ns Qg VDS=–10V, VGS=–10V, ID=–70mA 1.40 nC nC Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Qgs Qgd VDS=–10V, VGS=–10V, ID=–70mA VDS=–10V, VGS=–10V, ID=–70mA 0.16 Gate-to-Drain "Miller" Charge Diode Forward Voltage VSD IS=–70mA, VGS=0 0.85 Electrical Connection 0.23 nC 1.2 V Switching Time Test Circuit VDD=--25V D1 G2 S2 0V --4V VIN ID=--40mA RL=625Ω PW=10µs D.C.≤1% VOUT D VIN G G1 (Top view) D2 P.G 50Ω S ID -- VDS V --0.03 --0.02 VGS=--1.5V --0.01 C --0.1 75° Drain Current, ID – A --0.04 --0.08 --0.06 --0.04 --0.02 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS – V --1.8 0 --2.0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS – V IT00090 RDS(on) -- VGS 40 --4.0 IT00091 RDS(on) -- ID 100 VGS=--4V Ta=25°C 7 Static Drain-to-Source On-State Resistance, RDS (on) – Ω 35 Static Drain-to-Source On-State Resistance, RDS (on) – Ω 25°C --0.12 --2.0V .5V --0.05 VDS=--10V Ta=- .0 V .5 --2 --3 Drain Current, ID – A --4 . 0V --0.06 ID -- VGS --0.14 --3 --6 . 0V --0.07 MCH6603 25°C S1 30 25 ID=20mA 20 40mA 15 10 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS – V --9 --10 IT00092 5 3 Ta=75°C 2 25°C --25°C 10 --0.01 2 3 5 7 --0.1 Drain Current, ID – A 2 3 IT00093 No.6446-2/4 MCH6603 RDS(on) -- ID 1000 7 VGS=--1.5V Static Drain-to-Source On-State Resistance, RDS (on) – Ω 7 3 2 100 7 5 3 Ta=75°C 25°C --25°C 2 10 --0.01 2 3 5 7 2 --0.1 Drain Current, ID – A Static Drain-to-Source On-State Resistance, RDS (on) – Ω 30 V 2.5 V A, 20 10 --60 --40 --20 0 20 V 4.0 V A, =-GS m 40 =-ID 15 =-GS m 20 =-ID 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 7 --0.7 --25° C 5°C --0.6 25°C 5 --0.8 --0.9 --1.0 --1.1 Diode Forward Voltage, VSD – V 5 3 2 °C Ta=--25 0.1 75°C 7 Gate-to-Source Voltage, VGS – V Coss 3 2 Crss 1.0 7 5 3 2 25°C 5 3 2 2 3 5 7 2 --0.1 Drain Current, ID – A 3 IT00097 SW Time -- ID VDD=--25V VGS =--4V 5 3 tf td (off) 2 100 7 5 tr 3 td(on) 2 2 3 5 7 Drain Current, ID – A --0.1 IT00099 VGS -- Qg VDS=--10V ID=--70mA --9 Ciss 3 IT00095 VDS=--10V --10 f=1MHz 10 7 5 2 --0.01 7 IT00098 3 2 7 yfs -- ID 10 --0.01 --1.2 Ciss, Coss, Crss -- VDS 100 7 5 5 7 Switching Time, SW Time – ns --0.1 Ta= 7 Forward Current, IF – A 2 --0.01 --0.5 3 Drain Current, ID – A 1000 VGS=0 2 2 IT00096 3 3 2 0.01 --0.01 160 IF -- VSD 5 25°C --25°C 3 1.0 35 25 Ta=75°C IT00094 RDS(on) -- Ta 40 5 10 --0.001 3 Forward Transfer Admittance, | yfs | – S Static Drain-to-Source On-State Resistance, RDS (on) – Ω 5 Ciss, Coss, Crss – pF RDS(on) -- ID 100 VGS=--2.5V --8 --7 --6 --5 --4 --3 --2 --1 0 0.1 0 --5 --10 --15 --20 --25 --30 --35 --40 Drain-to-Source Voltage, VDS – V --45 --50 IT00100 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg – nC 1.4 1.6 IT00101 No.6446-3/4 MCH6603 ASO --1.0 ≤10µs 1m s IDP=--0.56A Drain Current, ID – A 5 Allowable Power Dissipation, PD – W 7 3 10 2 ms ID=--0.14A DC --0.1 0m s er 7 5 Operation in this area is limited by RDS(on). 3 2 10 op ati on Ta=25°C Single pulse 1unit Mounted on a ceramic board (900mm2×0.8mm) --0.01 --1.0 2 3 5 7 --10 PD -- Ta 1.0 2 3 Drain-to-Source Voltage, VDS – V 0.8 M ou 0.6 nt ed on ac er am ic bo 0.4 ar d( 90 0m 0.2 m2 ×0 .8m m )1 un it 0 5 7 --100 IT01737 0 20 40 60 80 100 120 140 Ambient Temperature, Ta – ˚C 160 IT01738 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6446-4/4