Ordering number : ENN7015 EC4401C N-Channel Silicon MOSFET EC4401C Small Signal Switch and Interface Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2197 [EC4401C] 0.5 0.3 0.05 0.2 4 2 1 1 : Gate 2 : Source 3 : Drain 4 : Drain 0.05 0.6 (Bottom view) 1.0 0.6 3 0.3 0.05 0.2 0.05 0.8 SANYO : E-CSP1008-4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ID ±10 V 0.15 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% V 0.6 A 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 Ratings min typ Unit max 30 V VGS=±8V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 Forward Transfer Admittance yfs RDS(on)1 VDS=10V, ID=80mA 0.15 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 10 µA ±10 µA 1.3 0.22 ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V V S 2.9 3.7 Ω 3.7 5.2 Ω 6.4 12.8 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI IM No.7015-1/4 92501 TS IM TA-3277 EC4401C Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 7.0 Output Capacitance 5.9 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 2.3 pF Turn-ON Delay Time See specified Test Circuit. 19 ns Rise Time td(on) tr See specified Test Circuit. 65 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 155 ns tf Qg See specified Test Circuit. 120 ns VDS=10V, VGS=10V, ID=150mA 1.58 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=150mA 0.26 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=150mA 0.31 Diode Forward Voltage VSD IS=150mA, VGS=0 0.95 Fall Time Total Gate Charge Type No. Indication(Top view) Electrical Connection(Top view) nC 1.2 Switching Time Test Circuit VDD=15V Polarity mark (Top) Gate S V 4V 0V Drain VIN Source ID=80mA RL=187.5Ω VOUT D VIN PW=10µs D.C.≤1% *Electrodes : on the bottom G Polarity mark (Top) P.G Drain 50Ω EC4401C S Gate Source ID -- VGS 0.30 0.08 VGS=1.5V 0.06 0.04 °C --25 °C Ta= 0.20 °C 0.10 75 Drain Current, ID -- A V 0.25 2 V 0.12 2. 3.0 4.0V .0V 6.0 Drain Current, ID -- A 3.5V 5V VDS=10V 0.14 25 ID -- VDS 0.16 0.15 0.10 0.05 0.02 0 0 0 0.2 0.6 0.4 0.8 Drain-to-Source Voltage, VDS -- V 0 1.0 1.0 1.5 2.5 2.0 3.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 10 0.5 IT00029 IT00030 RDS(on) -- ID 10 Ta=25°C VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 9 8 7 80mA 6 5 ID=40mA 4 3 2 1 0 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT00031 7 5 Ta=75°C 25°C 3 --25°C 2 1.0 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 5 IT00032 No.7015-2/4 EC4401C RDS(on) -- ID 7 Ta=75°C 5 25°C --25°C 3 2 1.0 0.01 2 3 5 7 2 0.1 3 V 40 =4.0 I D= , VGS A 80m I D= 4 3 2 1 0 --60 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C Switching Time, SW Time -- ns 75 °C C --25 °C 25° Ta= Forward Current, IF -- A 2 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V 7 2 10 Ciss 3 Crss 2 0.01 2 3 IT00034 5 3 25°C -Ta= 2 75°C 0.1 25°C 7 5 3 2 2 3 5 7 2 0.1 3 5 IT00036 SW Time -- ID VDD=15V VGS=4V 5 3 td(off) tf 2 100 7 tr 5 3 td(on) 2 2 3 5 7 2 0.1 Drain Current, ID -- A IT00038 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 3 Coss 7 VDS=10V VDS=10V ID=150mA 9 5 5 5 7 IT00037 f=1MHz 7 3 yfs -- ID 10 0.01 1.2 Ciss, Coss, Crss -- VDS 100 2 7 3 0.01 0.5 2 1000 2 5 --25°C 25°C 3 Drain Current, ID -- A 3 7 5 IT00035 VGS=0 0.1 Ta=75°C 7 0.01 0.01 160 IF -- VSD 5 10 Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω , mA 2 1.0 5V =2. V GS 3 IT00033 6 5 5 1.0 0.001 RDS(on) -- Ta 7 VGS=1.5V 7 5 Drain Current, ID -- A RDS(on) -- ID 100 VGS=2.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 10 8 7 6 5 4 3 2 1 1.0 0 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT00039 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00040 No.7015-3/4 EC4401C PD -- Ta Allowable Power Dissipation, PD -- W 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Amibient Temperature, Ta -- °C 140 160 IT00236 Note on usage : Since the EC4401C is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2001. Specifications and information herein are subject to change without notice. PS No.7015-4/4