Ordering number : ENN6779 MCH6401 N-Channel Silicon MOSFET MCH6401 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2193 [MCH6401] 0.3 5 2 3 0.65 0.25 1 0.15 4 1.6 6 2.1 • Package Dimensions 0.25 • 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0.85 2.0 0.15 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol SANYO : MCPH6 Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±10 V 4 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW≤10µs, duty cycle≤1% 16 A Mounted on a ceramic board (900mm2✕0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ Unit max ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 20 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=2A 0.4 RDS(on)1 RDS(on)2 ID=2A, VGS=4V ID=1A, VGS=2.5V 45 59 mΩ 60 84 mΩ Input Capacitance Ciss 370 pF Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 120 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 80 pF Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions 4.3 Marking : KA V 1 µA ±10 µA 1.3 6.2 V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1500 TS IM TA-2907 No.6779-1/4 MCH6401 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit 12 ns Rise Time tr td(off) See specified Test Circuit 42 ns See specified Test Circuit 39 ns tf See specified Test Circuit 40 ns Qg VDS=10V, VGS=10V, ID=4A 12 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=10V, ID=4A VDS=10V, VGS=10V, ID=4A 0.8 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=4A, VGS=0 Turn-OFF Delay Time Fall Time Total Gate Charge 1.8 nC 0.84 1.2 V Switching Time Test Circuit VDD=10V VIN 4V 0V ID=2A RL=5Ω VIN VOUT D PW=10µs D.C.≤1% G P.G 50Ω MCH6401 S ID -- VDS VGS=1.5V 2.0 1.5 1.0 4 3 2 5°C V 2.0 Drain Current, ID -- A 2.5 5 Ta= 7 3.5V 2.5V 4.0V 3.0 VDS=10V 3.0V 6.0V Drain Current, ID -- A 3.5 ID -- VGS 6 1 0.5 0 25° -C 25°C 4.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 1.0 1.0 1.5 2.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 200 0.5 IT02605 2.5 IT02606 RDS(on) -- Ta 120 180 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 160 140 ID=1A 120 2A 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT02607 100 V =2.5 VGS 1A, 80 I D= 60 4.0V S= A, VG I D=2 40 20 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT02608 No.6779-2/4 yfs -- ID °C --25 Ta= 75°C 3 2 25°C 1.0 7 5 3 2 0.1 0.1 3 5 7 2 1.0 3 5 0 0.2 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V 1.2 IT02610 Ciss, Coss, Crss -- VDS 1000 f=1MHz VDD=10V VGS=4V 7 5 5 td (off) tf Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 0.01 7 5 3 2 10 IT02609 3 tr 2 td(on) Ciss 3 2 Coss 100 Crss 7 5 10 7 0.1 3 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 7 0 10 Drain Current, ID -- A 6 5 4 3 2 0 6 8 10 12 Total Gate Charge, Qg -- nC 14 IT02613 PD -- Ta 2.0 1.5 12 14 16 IDP=16A 10 7 5 18 1.0 7 5 3 2 0.1 7 5 20 IT02612 <10µs 1m s ID=4A 10 3 2 3 2 1 10 100µs 7 4 8 ASO 3 2 2 6 5 8 0 4 Drain-to-Source Voltage, VDS -- V VDS=10V ID=4A 9 2 IT02611 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 0.1 7 5 3 2 7 SW Time -- ID 100 Allowable Power Dissipation, PD -- W 1.0 7 5 3 2 0.001 2 Drain Current, ID -- A 7 VGS=0 5°C 25° C --25° C 3 2 10 7 5 IF -- VSD 10 7 5 3 2 VDS=10V Ta= 7 100 7 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S MCH6401 DC ms 100 ms ope rat Operation in this area is limited by RDS(on). ion Ta=25°C Single pulse Mounted on a ceramic board(900mm2 ✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT02614 M ou nte do na ce ram 1.0 ic bo ard (9 00 mm 0.5 2 ✕0 .8m m) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02615 No.6779-3/4 MCH6401 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2000. Specifications and information herein are subject to change without notice. PS No.6779-4/4