MCH3109 / MCH3209 Ordering number : EN7129B SANYO Semiconductors DATA SHEET MCH3109 / MCH3209 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). High allowable power dissipation. Specifications ( ) : MCH3109 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--30)40 Collector-to-Emitter Voltage VCEO (--)30 V Emitter-to-Base Voltage VEBO (--)5 V (--)3 A Base Current IC ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Collector Current Collector Current (Pulse) (--)5 (--)600 Mounted on a ceramic board (600mm2✕0.8mm) V A mA 0.8 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product hFE fT Output Capacitance Cob Marking : MCH3109 : AJ / MCH3209 : CJ Conditions VCB=(--)30V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(--)500mA VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz Ratings min typ max 200 Unit (--)0.1 µA (--)0.1 µA 560 (380)450 (25)20 MHz pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70306 / 42806 MS IM TB-00002274 / D1504EA TS IM TB-00000344 / N3001 TS IM TA-3372, 3373 No.7129-1/5 MCH3109 / MCH3209 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat)1 IC=(--)1.5A, IB=(--)30mA VCE(sat)2 IC=(--)1.5A, IB=(--)75mA IC=(--)1.5A, IB=(--)30mA Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Fall Time min IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ tf (--155) (--230) mV 120 180 mV (--)105 (--)155 mV (--)0.83 (--)1.2 V V (--)30 V (--)5 V (50)30 ns (270)300 ns See specified Test Circuit. (25)15 ns Switching Time Test Circuit unit : mm 7019A-004 IB1 PW=20µs D.C.≤1% 0.15 OUTPUT IB2 0.25 INPUT 3 RB VR RL 0 to 0.02 1.6 2.1 Unit max See specified Test Circuit. Package Dimensions 2.0 typ (--30)40 IE=(--)10µA, IC=0A See specified Test Circuit. ton tstg Storage Time Ratings Conditions 50Ω 0.65 + 470µF + 100µF 2 0.3 VBE= --5V VCC=12V IC=20IB1= --20IB2=500mA (For PNP, the polarity is reversed.) 0.85 0.25 1 0.07 1 : Base 2 : Emitter 3 : Collector SANYO : MCPH3 --1.2 --6mA --4mA --0.8 --2mA --0.4 1.6 A 40mA 50mA 30mA --8mA --1.6 Collector Current, IC -- A --3 0 mA A --40m A --10m --50m A Collector Current, IC -- A mA 0 --2 IC -- VCE 2.0 MCH3109 20m IC -- VCE --2.0 10 mA A 8m 6mA 4mA 1.2 0.8 2mA 0.4 IB=0mA 0 0 --200 --400 --600 --800 Collector-to-Emitter Voltage, VCE -- mV --1000 IT03993 MCH3209 IB=0mA 0 0 200 400 600 800 1000 Collector-to-Emitter Voltage, VCE -- mV IT03994 No.7129-2/5 MCH3109 / MCH3209 IC -- VBE --2.0 25°C --25°C --1.5 --1.0 --0.5 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 1.5 1.0 Ta=75°C --25°C 25°C 100 7 5 5 2 3 5 7 --1.0 2 3 3 2 100 7 5 3 2 3 5 7 --100 2 3 5 7 --1000 2 Collector Current, IC -- mA 5 Output Capacitance, Cob -- pF 5 3 2 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 3 5 IT04001 2 3 5 7 1.0 2 3 5 7 10 IT03998 f T -- IC MCH3209 VCE=10V 3 2 100 7 5 3 2 2 3 5 7 100 2 3 5 7 1000 2 3 IT04000 Cob -- VCB 2 7 3 5 7 0.1 Collector Current, IC -- mA MCH3109 f=1MHz 2 3 IT03999 100 10 --1.0 2 5 10 0.01 3 Cob -- VCB 2 --25°C 7 Gain-Bandwidth Product, f T -- MHz 5 2 Ta=75°C 1000 MCH3109 VCE= --10V 7 10 --10 MCH3209 VCE=2V Collector Current, IC -- A f T -- IC 1000 hFE -- IC 7 10 0.01 5 7 --10 IT03997 Collector Current, IC -- A 1.2 IT03996 25°C 2 2 1.0 100 2 5 7 --0.1 0.8 3 3 3 0.6 7 3 2 0.4 1000 2 10 --0.01 0.2 Base-to-Emitter Voltage, VBE -- V DC Current Gain, hFE 3 0 IT03995 MCH3109 VCE= --2V 7 5 --1.2 hFE -- IC 1000 DC Current Gain, hFE 2.0 0 0 Gain-Bandwidth Product, f T -- MHz 2.5 0.5 0 Output Capacitance, Cob -- pF MCH3209 VCE=2V 3.0 Collector Current, IC -- A --2.5 Ta=75°C Collector Current, IC -- A --3.0 IC -- VBE 3.5 MCH3109 VCE= --2V Ta=75°C 25°C --25°C --3.5 MCH3209 f=1MHz 100 7 5 3 2 10 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 5 IT04002 No.7129-3/5 MCH3109 / MCH3209 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 --0.1 7 5 C 75° Ta= °C 5°C 2 --25 3 2 --0.01 7 5 3 2 --0.001 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT04003 Collector Current, IC -- A 3 2 C 75° Ta= °C 5°C --25 2 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 2 Ta= --25°C 75°C 5 25°C 3 2 --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A s µs 3 2 0µ 10 0m s tio 3 2 0.1 7 5 0 50 s ms era n MCH3109 / MCH3209 Ta=25°C Single pulse For PNP, minus sign is omitted. Mounted on a ceramic board (600mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 2 3 5 7 10 IT04004 3 2 1.0 7 5 3 2 0.1 7 5 C 75° Ta= °C 5°C --25 2 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT04006 VBE(sat) -- IC MCH3209 IC / IB=50 5 3 2 Ta= --25°C 1.0 7 75°C 5 25°C 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT04008 Collector Current, IC -- A PC -- Ta 10 1m 10 op 5 7 1.0 MCH3209 IC / IB=50 1.0 IC=3A 3 Collector Current, IC -- A ASO ICP=5A DC 2 VCE(sat) -- IC 0.01 0.01 5 7 --10 IT04007 Collector Current, IC -- A 1.0 7 5 5 7 0.1 7 3 7 3 10 MCH3109 IC / IB=50 --1.0 2 Collector Current, IC -- A VBE(sat) -- IC --10 3 2 3 2 0.001 0.01 5 7 --10 IT04005 Collector Current, IC -- A °C 25 0.01 7 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --1.0 7 5 3 2 C 75° Ta= °C --25 3 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 10 7 5 0.1 7 5 10 7 5 MCH3109 IC / IB=50 --0.1 7 5 MCH3209 IC / IB=20 3 2 VCE(sat) -- IC --10 7 5 VCE(sat) -- IC 1.0 7 5 MCH3109 IC / IB=20 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --1.0 7 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V 0.8 M ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 60 0m m2 ✕0 0.2 .8m m ) 0 3 5 IT04010 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03981 No.7129-4/5 MCH3109 / MCH3209 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No.7129-5/5