MCH6545 Ordering number : EN8953 SANYO Semiconductors DATA SHEET MCH6545 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications Applications • MOSFET gate drivers, relay drivers, lamp drivers, motor drivers. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting. Ultrasmall package allows applied sets to be made small and thin. Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--50)60 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO Collector Current (--)5 IC (--)500 V mA Collector Current (Pulse) ICP (--)1.0 A Collector Dissipation PC Mounted on a ceramic board (600mm2✕0.8m) 0.5 W Total Power Dissipation PT Mounted on a ceramic board (600mm2✕0.8m) 0.55 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)100 nA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA DC Current Gain VCE=(--)2V, IC=(--)10mA Gain-Bandwidth Product hFE fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage VCE(sat) VCE=(--)10V, IC=(--)50mA VCB=(--)10V, f=1MHz VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A (500)700 (690)500 MHz (3.8)2.8 IC=(--)100mA, IB=(--)10mA IC=(--)100mA, IB=(--)10mA Collector-to-Base Breakdown Voltage Marking : ET (200)300 pF (--60)50 (--120)100 (--)0.9 (--)1.2 mV V (--50)60 V (--)50 V (--)5 V Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72606 / 32406EA MS IM TB-00002174 No.8953-1/5 MCH6545 Continued from preceding page. Parameter Symbol Turn-On Time ton tstg tf Storage Time Fall Time (30)30 ns (170)340 ns See specified Test Circuit. (30)55 ns 0.25 2.1 1.6 0.25 3 0.65 5 4 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 1 2 3 Top view 0.3 0.85 0.07 6 0.15 4 2 Unit max See specified Test Circuit. 0 to 0.02 1 typ Electrical Connection 2.0 5 min See specified Test Circuit. Package Dimensions unit : mm 7022A-011 6 Ratings Conditions 1 2 3 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 6 5 4 SANYO : MCPH6 Switching Time Test Circuit IB1 PW=20µs D.C.≤1% INPUT OUTPUT IB2 VR RB RL 50Ω + 220µF VBE= --5V + 470µF VCC=25V IC=20IB1= --20IB2=200mA For PNP, the polarity is reversed. --300 --250 --2mA --200 --1mA --150 --500µA --100 --200µA --50 0 0 400 350 300 15m A 450 A --10m [NPN] 7mA 20m A --1 --5mA IC -- VCE 500 Collector Current, IC -- mA --40 m A --350 [PNP] 5mA A --400 --50m Collector Current, IC -- mA --450 A A mA 0m -25m --20 --3 - 8mA 0mA 5mA 1 3mA 30mA IC -- VCE --500 2mA 250 1mA 600µA 200 150 200µA 100 50 IB=0µA --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 Collector-to-Emitter Voltage, VCE -- mV IT05118 0 0 IB=0µA 100 200 300 400 500 600 700 900 800 Collector-to-Emitter Voltage, VCE -- mV 1000 IT05106 No.8953-2/5 MCH6545 IC -- VBE --600 [PNP] IC -- VBE 600 [NPN] VCE= --2V VCE=2V 500 Collector Current, IC -- mA --400 Ta=75 °C 25°C --25°C --300 --200 400 300 200 --100 100 0 0 --0.2 0 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 0 --1.2 [PNP] 100 100 7 5 5 2 3 5 7 --10 3 2 5 7 --100 2 3 Collector Current, IC -- mA VCE(sat) -- IC 3 10 1.0 5 7--1000 IT05120 [NPN] VCE=2V 2 3 2 2 3 5 7 10 2 3 5 7 100 2 VCE(sat) -- IC 3 [NPN] IC / IB=10 5 75 = Ta C 25° 3 --2 2 5° °C C 100 75 °C 7 Ta = 5 °C 25 3 5° C 7 2 --2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --100 5 7 1000 IT05108 IC / IB=10 2 3 Collector Current, IC -- mA [PNP] 1.2 IT05107 3 7 3 --1.0 1.0 25°C --25°C 5 2 0.8 Ta=75°C 7 DC Current Gain, hFE 3 0.6 hFE -- IC 1000 7 Ta=75°C 25°C --25°C 0.4 Base-to-Emitter Voltage, VBE -- V VCE= --2V 5 0.2 IT05119 hFE -- IC 1000 DC Current Gain, hFE Ta=7 5°C 25°C --25°C Collector Current, IC -- mA --500 2 10 7 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV [PNP] 5 3 2 --100 7 5°C 7 Ta= 5 3 5°C --2 25°C 2 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 2 3 5 7--1000 IT05123 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA IC / IB=20 7 --10 7 --1.0 5 1.0 7 IT05410 VCE(sat) -- IC --1000 5 5 7 1000 IT05411 VCE(sat) -- IC [NPN] IC / IB=20 2 100 75 °C 5 7 °C 25 5 5° C 3 --2 2 Ta = --10 --1.0 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05109 No.8953-3/5 MCH6545 VCE(sat) -- IC 3 [PNP] --1000 7 5 3 2 5°C --100 7 Ta= 7 5 --25 °C 25°C 3 2 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 VBE(sat) -- IC 2 5 3 2 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Cob -- VCB 3 2 3 5 7 2 --10 5 3 Collector-to-Base Voltage, VCB -- V f T -- IC 2 5 7 --10 2 3 5 7 10 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT05121 2 3 5 7 100 2 5 7 1000 3 IT05110 [NPN] IC / IB=20 5 3 2 25°C 1.0 Ta= --25°C 7 75°C 5 3 2 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05111 Cob -- VCB [NPN] 7 5 3 2 2 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V [PNP] VCE= --10V 3 3 3 VBE(sat) -- IC 1.0 1.0 --100 IT05122 5 2 2 f=1MHz 7 7 100 --1.0 2 10 fT -- IC 1000 7 100 IT05112 [NPN] VCE=10V Gain-Bandwidth Product, fT -- MHz Gain-Bandwidth Product, f T -- MHz 1000 C 5° --2 Collector Current, IC -- mA Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 5 °C 3 [PNP] 7 2 25 5 0.1 1.0 f=1MHz 1.0 --1.0 7 = Ta 7 5 7--1000 IT05125 Collector Current, IC -- mA 10 °C 75 100 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 75°C 25°C 2 [PNP] Ta= --25°C 7 3 Collector Current, IC -- mA IC / IB=20 --1.0 5 10 1.0 5 7--1000 IT05124 Collector Current, IC -- mA [NPN] IC / IB=50 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 VCE(sat) -- IC 1000 IC / IB=50 7 5 3 2 100 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05113 No.8953-4/5 MCH6545 Ron -- IB 100 7 5 1kΩ ON Resistance, Ron -- Ω 2 IB 10 7 5 Ron -- IB 3 2 1.0 7 5 [NPN] 1kΩ f=1MHz OUT IN 1kΩ 3 2 IB 10 7 5 3 2 1.0 7 5 3 3 2 2 0.1 --0.1 0.1 0.1 2 3 5 7 2 --1.0 3 Base Current, IB -- mA PD -- Ta 0.6 Allowable Power Dissipation, PD -- W 100 7 5 OUT IN 3 ON Resistance, Ron -- Ω [PNP] 1kΩ f=1MHz 5 7 --10 IT06093 2 3 5 7 1.0 2 3 5 Base Current, IB -- mA 7 10 IT06092 [PNP/NPN] Mounted on a ceramic board (600mm2✕0.8mm) 0.55 0.5 0.4 To t al 0.3 di ss 1u ni t ip at io n 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10744 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No.8953-5/5