SANYO 2SA2202

2SA2202
Ordering number : ENA0583
SANYO Semiconductors
DATA SHEET
2SA2202
PNP Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Applications
•
DC / DC converters, relay drivers, lamp drivers, motor drivers, flash.
Features
•
•
•
•
•
Adoption of FBET, MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--100
V
Collector-to-Emitter Voltage
VCES
--100
V
Collector-to-Emitter Voltage
VCEO
--100
V
Emitter-to-Base Voltage
VEBO
--7
V
IC
--2
A
Collector Current
Collector Current (Pulse)
Base Current
ICP
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
--3
A
--400
mA
Mounted on a ceramic board (250mm2✕0.8mm)
1.3
W
Tc=25°C
3.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
Gain-Bandwidth Product
hFE
fT
Output Capacitance
Cob
Marking : RC
Conditions
VCB=--80V, IE=0A
VEB=--4V, IC=0A
VCE=--5V, IC=--100mA
VCE=--10V, IC=--500mA
VCB=--10V, f=1MHz
Ratings
min
typ
Unit
max
200
--1
µA
--1
µA
400
300
MHz
23
pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2706EA TI IM TC-00000421 No. A0583-1/4
2SA2202
Continued from preceding page.
Parameter
Symbol
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CES
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IC=--10µA, IE=0A
IC=--100µA, RBE=0Ω
IC=--1mA, RBE=∞
IE=--10µA, IC=0A
ton
tstg
tf
Storage Time
Fall Time
min
typ
IC=--1A, IB=--100mA
IC=--1A, IB=--100mA
Collector-to-Base Breakdown Voltage
Turn-ON Time
Ratings
Conditions
--120
--240
--0.85
--1.2
mV
V
--100
V
--100
V
--100
V
--7
V
See specified Test Circuit.
40
ns
See specified Test Circuit.
600
ns
See specified Test Circuit.
30
ns
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7007A-004
PW=20µs
D.C.≤1%
IB1
IB2
OUTPUT
INPUT
Top View
4.5
VR
1.6
1.5
RB
+
50Ω
2.5
VBE=5V
4.0
1.0
2
RL
+
220µF
1
Unit
max
470µF
VCC= --50V
IC= --10IB1=10IB2= --0.5A
3
0.4
0.4
0.5
1.5
3.0
0.75
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
0m
A
--1
60
mA
--1
4
--100mA
--80mA
--60mA
--40mA
--18
--1.2
--20mA
0m
A
--0.8
IB= --5mA
--0.4
Collector Current, IC -- A
0m
A
--1.8
--20
Collector Current, IC -- A
--1.6
VCE= --5V
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--25°C
0
2
--1
IC -- VBE
--2.0
mA
25°C
IC -- VCE
--2.0
Ta=75
°C
Bottom View
--0.4
--0.2
0
0
0
--0.1
--0.2
--0.3
--0.4
Collector-to-Emitter Voltage, VCE -- V
--0.5
IT11879
0
--0.2
--0.4
--0.6
--0.8
Base-to-Emitter Voltage, VBE -- V
--1.0
IT11880
No. A0583-2/4
2SA2202
hFE -- IC
1000
DC Current Gain, hFE
5
Ta=75°C
25°C
--25°C
3
2
100
7
5
3
2
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Collector Current, IC -- A
5
3
2
--0.1
25
7
5
7
Ta=
5
°C
5°C
3
--25
°C
2
--0.01
7
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Cob -- VCB
2
Output Capacitance, Cob -- pF
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
f=1MHz
2
Ta= --25°C
7
75°C
25°C
5
5
IT11882
IC / IB=10
--1.0
3
Collector Current, IC -- A
IT11881
VBE(sat) -- IC
3
IC / IB=10
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
VCE(sat) -- IC
--1.0
VCE= --5V
100
7
5
3
2
10
3
7
2
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Collector Current, IC -- A
5
--0.1
5
Collector Current, IC -- A
3
5
7 --1.0
2
3
Collector Current, IC -- A
5
Tc=25°C
Single pulse
Mounted on a ceramic board (250mm2✕0.8mm)
5 7--0.1 2 3
5 7--1.0 2 3
5 7--10
2 3
5 7--100 2
IT11886
Collector-to-Emitter Voltage, VCE -- V
IT11885
PC -- Tc
4.0
3.5
1.3
Collector Dissipation, PC -- W
1.4
Collector Dissipation, PC -- W
--0.1
7
5
--0.01
--0.01 2 3
PC -- Ta
1.6
µs
C)
5°
=2
C)
5°
Tc
n(
=2
Ta
n(
tio
2
2
2
<10µs
tio
era
3
3
3
7 --0.1
5 7 --100
IT11884
era
op
5
3
100
s
0µ
IC= --2A
--1.0
7
5
op
7
2
10ms 1ms
100ms
DC
100
5 7 --10
DC
2
3
50
3
2
3
5
2
ASO
ICP= --3A
5
3
5 7 --1.0
5
7
2
3
Collector-to-Base Voltage, VCB -- V
VCE= --10V
2
--0.01
2
IT11883
fT -- IC
1000
Gain-Bandwidth Product, fT -- MHz
3
M
ou
1.2
nt
1.0
ed
on
ac
er
am
ic
0.8
bo
ar
0.6
d(
25
0m
m2
✕0
0.4
.8m
m
)
0.2
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT11869
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT11870
No. A0583-3/4
2SA2202
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of December, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0583-4/4