SEMiX703GAR126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX® 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 ... 20 V 10 µs -40 ... 150 °C Tc = 25 °C 561 A Tc = 80 °C 384 A 450 A VGES tpsc VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 125 °C Tj Inverse diode IF SEMiX703GAR126HDs Tj = 150 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 IFRM IFRM = 2xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2900 A -40 ... 150 °C Tc = 25 °C 561 A Tc = 80 °C 384 A 450 A Tj Freewheeling diode IF Tj = 150 °C IFnom Typical Applications* IFRM IFRM = 2xIFnom 900 A • AC inverter drives • UPS • Electronic Welding IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2900 A -40 ... 150 °C Tj Module Remarks • Case temperatur limited to TC=125°C max. • Not for new design It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 1.7 2.1 V Tj = 125 °C 2 2.45 V Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 1.6 2.0 mΩ IGBT VCE(sat) IC = 450 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V Tj = 125 °C VGE(th) VGE=VCE, IC = 18 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 25 °C 5 2.4 3.0 mΩ 5.8 6.5 V 0.1 0.3 mA Tj = 125 °C mA f = 1 MHz 32.3 nF f = 1 MHz 1.69 nF f = 1 MHz 1.46 nF QG VGE = - 8 V...+ 15 V 3600 nC RGint Tj = 25 °C 1.67 Ω GAR © by SEMIKRON Rev. 15 – 16.12.2009 1 SEMiX703GAR126HDs Characteristics Symbol Conditions td(on) VCC = 600 V IC = 450 A tr Eon td(off) tf RG on = 1.6 Ω RG off = 1.6 Ω Eoff Rth(j-c) ® SEMiX 3s Trench IGBT Modules SEMiX703GAR126HDs Features rF • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Qrr Err Rth(j-c) rF Qrr Err Rth(j-c) max. Unit 310 Tj = 125 °C 60 ns Tj = 125 °C 32 mJ Tj = 125 °C 680 ns Tj = 125 °C 135 ns Tj = 125 °C 68 mJ ns 0.061 K/W Tj = 25 °C 1.6 1.80 V Tj = 125 °C 1.6 1.8 V Tj = 25 °C 0.9 1 1.1 V Tj = 125 °C 0.7 0.8 0.9 V Tj = 25 °C 1.1 1.3 1.6 mΩ Tj = 125 °C 1.6 1.8 2.0 mΩ IF = 450 A Tj = 125 °C di/dtoff = 8500 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 450 A VGE = 0 V chip VF0 IRRM typ. per IGBT Inverse diode VF = VEC IF = 450 A VGE = 0 V chip VF0 IRRM min. Tj = 125 °C Tj = 25 °C 580 A 130 µC 60 mJ 1.6 Tj = 125 °C 0.11 K/W 1.8 V 1.6 1.8 V Tj = 25 °C 0.9 1 1.1 V Tj = 125 °C 0.7 0.8 0.9 V Tj = 25 °C 1.1 1.3 1.6 mΩ 1.8 2.0 mΩ Tj = 125 °C IF = 450 A Tj = 125 °C di/dtoff = 8500 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 600 V per diode 1.6 580 A 130 µC 60 mJ 0.11 K/W Module LCE RCC'+EE' res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 20 nH TC = 25 °C 0.7 mΩ TC = 125 °C 1 mΩ 0.04 to terminals (M6) Mt K/W 3 5 Nm 2.5 5 Nm Nm w 300 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K GAR 2 Rev. 15 – 16.12.2009 © by SEMIKRON SEMiX703GAR126HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 15 – 16.12.2009 3 SEMiX703GAR126HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 15 – 16.12.2009 © by SEMIKRON SEMiX703GAR126HDs SEMiX 3s spring configuration © by SEMIKRON Rev. 15 – 16.12.2009 5 SEMiX703GAR126HDs This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 6 Rev. 15 – 16.12.2009 © by SEMIKRON