SEMIKRON SEMIX604GB126HDS_08

SEMiX604GB126HDs
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
ICRM
Tj = 150°C
1200
V
Tc = 25°C
590
A
Tc = 80°C
413
A
800
A
-20 ... 20
V
10
µs
-40 ... 150
°C
Tc = 25°C
533
A
Tc = 80°C
367
A
ICRM = 2xICnom
VGES
SEMiX®4s
Trench IGBT Modules
tpsc
Tj
Inverse diode
IF
SEMiX604GB126HDs
Preliminary Data
VCC = 600V
VGE ≤ 20V
Tj = 125°C
VCES ≤ 1200V
Tj = 150°C
IFRM
IFRM = 2xIFnom
800
A
IFSM
tp = 10ms, half sine wave, Tj = 25°C
2500
A
-40 ... 150
°C
Tj
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
max.
• Not for new design
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 60s
600
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Tj = 25°C
1.7
2.1
V
Tj = 125°C
2.00
2.45
V
V
IGBT
VCE(sat)
ICnom = 400A
VGE = 15V
chiplevel
VCE0
rCE
VGE = 15V
Tj = 25°C
1
1.2
Tj = 125°C
0.9
1.1
V
Tj = 25°C
1.8
2.3
mΩ
Tj = 125°C
2.8
3.4
mΩ
VGE(th)
VGE=VCE, IC = 16mA
ICES
VGE = 0V
VCE = 1200V
Cies
Coes
Cres
VCE = 25V
VGE = 0V
Tj = 25°C
5
5.8
6.5
V
0.12
0.36
mA
Tj = 125°C
mA
f = 1MHz
28.8
nF
f = 1MHz
1.51
nF
f = 1MHz
1.31
nF
QG
VGE = - 8 V...+ 15 V
3200
nC
RGint
Tj = 25°C
1.88
Ω
td(on)
VCC = 600V
ICnom = 400A
Tj = 125°C
RG on = 2.2Ω
RG off = 2.2Ω
330
ns
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
per IGBT
70
ns
36
mJ
630
ns
130
ns
60
mJ
0.065
K/W
GB
© by SEMIKRON
03.04.2008
1
SEMiX604GB126HDs
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IFnom = 400A
VGE = 0V
chiplevel
VF0
rF
SEMiX®4s
IRRM
Qrr
Trench IGBT Modules
Err
Rth(j-c)D
min.
Tj = 25°C
Tj = 125°C
typ.
max.
Unit
1.6
1.8
V
1.6
1.8
V
Tj = 25°C
0.9
1
1.1
V
Tj = 125°C
0.7
0.8
0.9
V
Tj = 25°C
1.3
1.5
1.8
mΩ
2.0
2.3
mΩ
Tj = 125°C
IFnom = 400A
Tj = 125°C
di/dtoff = 6200A/µs T = 125°C
j
VGE = -15V
T
j = 125°C
VCC = 600V
per diode
1.8
475
A
100
µC
46
mJ
0.11
K/W
Module
SEMiX604GB126HDs
Preliminary Data
LCE
RCC'+EE'
res., terminal-chip
22
nH
TC = 25°C
0.7
mΩ
TC = 125°C
1
mΩ
Features
Rth(c-s)
per module
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Ms
to heat sink (M5)
3
5
Nm
Mt
to terminals (M6)
2.5
5
Nm
400
g
K/W
w
Temperature sensor
R100
Tc=100°C (R25=5 kΩ)
0,493
±5%
kΩ
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
K
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
0.03
Remarks
• Case temperatur limited to TC=125°C
max.
• Not for new design
GB
2
03.04.2008
© by SEMIKRON
SEMiX604GB126HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
© by SEMIKRON
03.04.2008
3
SEMiX604GB126HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
03.04.2008
© by SEMIKRON
SEMiX604GB126HDs
SEMiX 4s
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or gurantee expressed or
implied is made regarding delivery, performance or suitability.
© by SEMIKRON
03.04.2008
5