SEMiX604GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 590 A Tc = 80°C 413 A 800 A -20 ... 20 V 10 µs -40 ... 150 °C Tc = 25°C 533 A Tc = 80°C 367 A ICRM = 2xICnom VGES SEMiX®4s Trench IGBT Modules tpsc Tj Inverse diode IF SEMiX604GB126HDs Preliminary Data VCC = 600V VGE ≤ 20V Tj = 125°C VCES ≤ 1200V Tj = 150°C IFRM IFRM = 2xIFnom 800 A IFSM tp = 10ms, half sine wave, Tj = 25°C 2500 A -40 ... 150 °C Tj Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Module It(RMS) Tstg Visol AC sinus 50Hz, t = 60s 600 A -40 ... 125 °C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25°C 1.7 2.1 V Tj = 125°C 2.00 2.45 V V IGBT VCE(sat) ICnom = 400A VGE = 15V chiplevel VCE0 rCE VGE = 15V Tj = 25°C 1 1.2 Tj = 125°C 0.9 1.1 V Tj = 25°C 1.8 2.3 mΩ Tj = 125°C 2.8 3.4 mΩ VGE(th) VGE=VCE, IC = 16mA ICES VGE = 0V VCE = 1200V Cies Coes Cres VCE = 25V VGE = 0V Tj = 25°C 5 5.8 6.5 V 0.12 0.36 mA Tj = 125°C mA f = 1MHz 28.8 nF f = 1MHz 1.51 nF f = 1MHz 1.31 nF QG VGE = - 8 V...+ 15 V 3200 nC RGint Tj = 25°C 1.88 Ω td(on) VCC = 600V ICnom = 400A Tj = 125°C RG on = 2.2Ω RG off = 2.2Ω 330 ns tr Eon td(off) tf Eoff Rth(j-c) per IGBT 70 ns 36 mJ 630 ns 130 ns 60 mJ 0.065 K/W GB © by SEMIKRON 03.04.2008 1 SEMiX604GB126HDs Characteristics Symbol Conditions Inverse diode VF = VEC IFnom = 400A VGE = 0V chiplevel VF0 rF SEMiX®4s IRRM Qrr Trench IGBT Modules Err Rth(j-c)D min. Tj = 25°C Tj = 125°C typ. max. Unit 1.6 1.8 V 1.6 1.8 V Tj = 25°C 0.9 1 1.1 V Tj = 125°C 0.7 0.8 0.9 V Tj = 25°C 1.3 1.5 1.8 mΩ 2.0 2.3 mΩ Tj = 125°C IFnom = 400A Tj = 125°C di/dtoff = 6200A/µs T = 125°C j VGE = -15V T j = 125°C VCC = 600V per diode 1.8 475 A 100 µC 46 mJ 0.11 K/W Module SEMiX604GB126HDs Preliminary Data LCE RCC'+EE' res., terminal-chip 22 nH TC = 25°C 0.7 mΩ TC = 125°C 1 mΩ Features Rth(c-s) per module • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm 400 g K/W w Temperature sensor R100 Tc=100°C (R25=5 kΩ) 0,493 ±5% kΩ B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K Typical Applications • AC inverter drives • UPS • Electronic Welding 0.03 Remarks • Case temperatur limited to TC=125°C max. • Not for new design GB 2 03.04.2008 © by SEMIKRON SEMiX604GB126HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic © by SEMIKRON 03.04.2008 3 SEMiX604GB126HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 03.04.2008 © by SEMIKRON SEMiX604GB126HDs SEMiX 4s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or gurantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON 03.04.2008 5