SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX® 3s Trench IGBT Modules ICRM = 2xICnom 600 A -20 ... 20 V 10 µs -40 ... 150 °C Tc = 25 °C 431 A Tc = 80 °C 298 A 300 A VGES tpsc VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 125 °C Tj Inverse diode IF SEMiX503GB126HDs Tj = 150 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 IFRM IFRM = 2xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2000 A -40 ... 150 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Typical Applications* • AC inverter drives • UPS • Electronic Welding Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 1.7 2.1 V Tj = 125 °C 2 2.45 V Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 2.3 3.0 mΩ IGBT Remarks • Case temperatur limited to TC=125°C max. • Not for new design VCE(sat) IC = 300 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V Tj = 125 °C VGE(th) VGE=VCE, IC = 12 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C td(on) tr Eon td(off) tf VCC = 600 V IC = 300 A RG on = 2.2 Ω RG off = 2.2 Ω Eoff Rth(j-c) Tj = 25 °C 5 3.7 4.5 mΩ 5.8 6.5 V 0.1 0.3 mA Tj = 125 °C mA f = 1 MHz 21.6 nF f = 1 MHz 1.13 nF f = 1 MHz 0.98 nF 2400 nC 2.50 Ω Tj = 125 °C 275 ns Tj = 125 °C 55 ns Tj = 125 °C 28 mJ Tj = 125 °C 625 ns Tj = 125 °C 125 ns Tj = 125 °C 44 per IGBT mJ 0.08 K/W GB © by SEMIKRON Rev. 16 – 16.12.2009 1 SEMiX503GB126HDs Characteristics Symbol Conditions Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 rF SEMiX® 3s IRRM Qrr Trench IGBT Modules Err Rth(j-c) SEMiX503GB126HDs • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Tj = 25 °C Tj = 125 °C typ. max. Unit 1.6 1.80 V 1.6 1.8 V Tj = 25 °C 0.9 1 1.1 V Tj = 125 °C 0.7 0.8 0.9 V Tj = 25 °C 1.7 2.0 2.3 mΩ 2.7 3.0 mΩ Tj = 125 °C IF = 300 A Tj = 125 °C di/dtoff = 6900 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 600 V per diode 2.3 400 A 77 µC 32.5 mJ 0.13 K/W Module LCE RCC'+EE' Features min. res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 20 nH TC = 25 °C 0.7 mΩ TC = 125 °C 1 mΩ 0.04 to terminals (M6) Mt K/W 3 5 Nm 2.5 5 Nm Nm w 300 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K Remarks • Case temperatur limited to TC=125°C max. • Not for new design GB 2 Rev. 16 – 16.12.2009 © by SEMIKRON SEMiX503GB126HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 16 – 16.12.2009 3 SEMiX503GB126HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 16 – 16.12.2009 © by SEMIKRON SEMiX503GB126HDs SEMiX 3s spring configuration © by SEMIKRON Rev. 16 – 16.12.2009 5 SEMiX503GB126HDs This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 6 Rev. 16 – 16.12.2009 © by SEMIKRON