SKT 7,0 Qu RG bond. Absolute Maximum Ratings Symbol Conditions Values Unit VRRM VDRM Tj = 25 °C, IR = 0.2 mA 1600 V Tj = 25 °C, ID = 0.2 mA 1600 V IT(AV) Tc = 80 °C, Tj = 130 °C 55 A ITSM Tj = 130 °C, 10 ms, sin 180° 450 A i2t Tj = 130 °C, 10 ms, sin 180° 1010 A2s 130 °C Tjmax THYRISTOR IT(DC) = 75 A VRRM = 1600 V Size: 7,0 mm x 7,0 mm Corner gate SKT 7,0 Qu RG bond. Electrical Characteristics Symbol Conditions min. typ. max. Unit VT Tj = 130 °C, IT = 45 A 1.2 V VT(TO) Tj = 130 °C 0.85 V rT Tj = 130 °C 7.9 mΩ IGT Tj = 25 °C 100 mA VGT Tj = 25 °C 1.98 IGD Tj = 115 °C 6 0.25 V mA VGD Tj = 130 °C Features IH Tj = 25 °C 165 mA • high current density due to double mesa technology • high surge current • compatible to thick wire bonding • compatible to all standard solder processes IL Tj = 25 °C 330 mA max. Unit V Dynamic Characteristics Symbol Conditions min. typ. Typical Applications* tq Tj = 130 °C • conrolled rectifier circuits • solid state relays (di/dt)cr Tj = 130 °C 50 A/µs (dv/dt)cr Tj = 130 °C 1000 V/µs max. Unit °C 150 µs Thermal Characteristics Symbol Conditions min. typ. Tj -40 130 Tstg -40 130 °C 255 °C Tsolder Rth(j-c) Semipack 1 assembly 0.45 K/W Values Unit 7.0 x 7.0 mm2 49 mm2 Mechanical Characteristics Symbol Conditions Raster size Area total Anode solderable (Ag/Ni) Gate and Cathode bondable (Al) Wire bond Al,diameter ≤ 500µm Package tray Chips / Package 81 pcs SKT © by SEMIKRON Rev. 0 – 19.02.2010 1 SKT 7,0 Qu RG bond. This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 2 Rev. 0 – 19.02.2010 © by SEMIKRON