SKR 6,2 Qu bond Absolute Maximum Ratings Symbol Conditions VRRM IF(AV) 2 Values Unit Tj = 25 °C, IR = 0.05 mA 1600 V Ts = 80 °C, Tj = 150 °C 50 A 1800 A2s Tj = 25 °C 850 A Tj = 150 °C 600 A 150 °C it Tj = 150 °C, 10 ms, sin 180° IFSM 10 ms sin 180° Tjmax DIODE Electrical Characteristics IF(DC) = 65 A VRRM = 1600 V Size: 6,2 mm x 6,2 mm SKR 6,2 Qu bond Symbol Conditions IR VF min. typ. max. Unit Tj = 25 °C, VRRM 0.05 mA Tj = 145 °C, VRRM 1.1 mA Tj = 25 °C, IF = 33 A 1 1.21 V Tj = 125 °C, IF = 33 A 0.9 1.1 V V(TO) Tj = 125 °C 0.83 V rT Tj = 125 °C 4.9 mΩ trr Tj = 25 °C, ± 1 A 22 µs Thermal Characteristics Features • high current density due to mesa technology • high surge current • compatible to thick wire bonding • compatible to all standard solder processes Symbol min. typ. max. Unit °C Tj -40 150 Tstg -40 150 °C Tsolder 10 min. 250 °C Tsolder 5 min. 320 °C Rth(j-s) soldered on 0,38 mm DCB, reference point on copper heatsink close to the chip Typical Applications* • uncontrolled rectifier bridges Conditions 1 K/W Values Unit 6.2 x 6.2 mm2 38.44 mm2 Mechanical Characteristics Symbol Conditions Raster size Area total Anode bondable (Al) Cathode solderable (Ag/Ni) Al, diameter ≤ 500 µm Wire bond Package wafer frame Chips / Package 378 pcs SKR © by SEMIKRON Rev. 1 – 19.02.2010 1 SKR 6,2 Qu bond This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 2 Rev. 1 – 19.02.2010 © by SEMIKRON