SKR 12,4 Qu bond Absolute Maximum Ratings Symbol Conditions VRRM IF(AV) 2 Values Unit Tj = 25 °C, IR = 0.2 mA 1600 V Ts = 80 °C, Tj = 150 °C 190 A 26500 A2s Tj = 25 °C 3200 A Tj = 150 °C 2300 A 150 °C it Tj = 150 °C, 10 ms, sin 180° IFSM 10 ms sin 180° Tjmax DIODE Electrical Characteristics IF(DC) = 235 A VRRM = 1600 V Size: 12,4 mm x 12,4 mm SKR 12,4 Qu bond Symbol Conditions IR VF min. typ. max. Unit Tj = 25 °C, VRRM 0.2 mA Tj = 120 °C, VRRM 1.1 mA Tj = 25 °C, IF = 160 A 1 1.21 V Tj = 125 °C, IF = 160 A 0.9 1.1 V V(TO) Tj = 125 °C 0.83 V rT Tj = 125 °C 1.0 mΩ trr Tj = 25 °C, ± 1 A 34 µs Features • high current density due to mesa technology • high surge current • compatible to thick wire bonding • compatible to all standard solder processes Typical Applications* • uncontrolled rectifier bridges Thermal Characteristics Symbol Conditions min. typ. max. Unit °C Tj -40 150 Tstg -40 150 °C Tsolder 10 min. 250 °C Tsolder 5 min. 320 °C Rth(j-s) soldered on 0,38 mm DCB, reference point on copper heatsink close to the chip 0.27 K/W Values Unit 12.4 x 12.4 mm2 153.76 mm2 Mechanical Characteristics Symbol Conditions Raster size Area total Anode bondable (Al) Cathode solderable (Ag/Ni) Al, diameter ≤ 500 µm Wire bond Package tray Chips / Package 36 pcs SKR © by SEMIKRON Rev. 1 – 19.02.2010 1 SKR 12,4 Qu bond This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 2 Rev. 1 – 19.02.2010 © by SEMIKRON