SKR 10,3 Qu bond Absolute Maximum Ratings Symbol Conditions VRRM IF(AV) 2 Values Unit Tj = 25 °C, IR = 0.1 mA 1600 V Ts = 80 °C, Tj = 150 °C 135 A 13613 A2s Tj = 25 °C 2000 A Tj = 150 °C 1650 A 150 °C It Tj = 150 °C, 10 ms, sin 180° IFSM 10 ms sin 180° Tjmax DIODE Electrical Characteristics IF(DC) = 170 A VRRM = 1600 V Size: 10,3 mm x 10,3 mm SKR 10,3 Qu bond Symbol Conditions IR VF min. typ. max. Unit Tj = 25 °C, VRRM 0.1 mA Tj = 145 °C, VRRM 1.1 mA Tj = 25 °C, IF = 106 A 1 1.21 V Tj = 125 °C, IF = 106 A 0.9 1.1 V V(TO) Tj = 125 °C 0.83 V rT Tj = 125 °C 1.6 mΩ trr Tj = 25 °C, ± 1 A 29 µs Thermal Characteristics Features • high current density due to mesa technology • high surge current • compatible to thick wire bonding • compatible to all standard solder processes Symbol min. typ. max. Unit °C Tj -40 150 Tstg -40 150 °C Tsolder 10 min. 250 °C Tsolder 5 min. 320 °C Rth(j-s) soldered on 0,38 mm DCB, reference point on copper heatsink close to the chip Typical Applications • uncontrolled rectifier bridges Conditions 0.38 K/W Values Unit 10,3 x 10,3 mm 106,09 mm2 Mechanical Characteristics Symbol Conditions Raster size Area total Anode bondable (Al) Cathode solderable (Ag/Ni) Al, diameter ≤ 500 µm Wire bond Package wafer frame Chips / Package 128 pcs SKR © by SEMIKRON Rev. 0 – 22.09.2009 1 SKR 10,3 Qu bond This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 2 Rev. 0 – 22.09.2009 © by SEMIKRON