SEMIKRON SKR3

SKR 10,3 Qu bond
Absolute Maximum Ratings
Symbol
Conditions
VRRM
IF(AV)
2
Values
Unit
Tj = 25 °C, IR = 0.1 mA
1600
V
Ts = 80 °C, Tj = 150 °C
135
A
13613
A2s
Tj = 25 °C
2000
A
Tj = 150 °C
1650
A
150
°C
It
Tj = 150 °C, 10 ms, sin 180°
IFSM
10 ms
sin 180°
Tjmax
DIODE
Electrical Characteristics
IF(DC) = 170 A
VRRM = 1600 V
Size: 10,3 mm x 10,3 mm
SKR 10,3 Qu bond
Symbol
Conditions
IR
VF
min.
typ.
max.
Unit
Tj = 25 °C, VRRM
0.1
mA
Tj = 145 °C, VRRM
1.1
mA
Tj = 25 °C, IF = 106 A
1
1.21
V
Tj = 125 °C, IF = 106 A
0.9
1.1
V
V(TO)
Tj = 125 °C
0.83
V
rT
Tj = 125 °C
1.6
mΩ
trr
Tj = 25 °C, ± 1 A
29
µs
Thermal Characteristics
Features
• high current density due to mesa
technology
• high surge current
• compatible to thick wire bonding
• compatible to all standard solder
processes
Symbol
min.
typ.
max.
Unit
°C
Tj
-40
150
Tstg
-40
150
°C
Tsolder
10 min.
250
°C
Tsolder
5 min.
320
°C
Rth(j-s)
soldered on 0,38 mm DCB, reference
point on copper heatsink close to the
chip
Typical Applications
• uncontrolled rectifier bridges
Conditions
0.38
K/W
Values
Unit
10,3 x 10,3
mm
106,09
mm2
Mechanical Characteristics
Symbol
Conditions
Raster
size
Area total
Anode
bondable (Al)
Cathode
solderable (Ag/Ni)
Al, diameter ≤ 500 µm
Wire bond
Package
wafer frame
Chips /
Package
128
pcs
SKR
© by SEMIKRON
Rev. 0 – 22.09.2009
1
SKR 10,3 Qu bond
This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery,
performance or suitability.
2
Rev. 0 – 22.09.2009
© by SEMIKRON