STGW35HF60WD 35 A, 600 V ultra fast IGBT Features ■ Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses ■ VCE(sat) classified for easy parallel connection ■ Ultra fast soft recovery antiparallel diode 2 Applications 3 1 TO-247 ■ Welding ■ High frequency converters ■ Power factor correction Description Figure 1. Internal schematic diagram The STGW35HF60WD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. The device is tailored to high switching frequency operation (over 100 kHz). Table 1. Device summary Order code Marking(1) Package Packaging TO-247 Tube GW35HF60WDA STGW35HF60WD GW35HF60WDB GW35HF60WDC 1. Collector-emitter saturation voltage is classified in group A, B and C, see Table 5: VCE(sat) classification. STMicroelectronics reserves the right to ship from any group according to production availability. May 2010 Doc ID 15592 Rev 5 1/12 www.st.com 12 Electrical ratings 1 STGW35HF60WD Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Value Unit Collector-emitter voltage (VGE = 0) 600 V IC (1) Continuous collector current at TC = 25 °C 60 A IC (1) Continuous collector current at TC = 100 °C 35 A ICP(2) Pulsed collector current 150 A (3) Turn-off latching current 80 A ± 20 V Diode RMS forward current at TC = 25 °C 30 A IFSM Surge non repetitive forward current tp= 10 ms sinusoidal 120 A PTOT Total dissipation at TC = 25 °C 200 W Tstg Storage temperature – 55 to 150 °C Value Unit Thermal resistance junction-case IGBT 0.63 °C/W Thermal resistance junction-case diode 1.5 °C/W Thermal resistance junction-ambient 50 °C/W ICL VGE IF Tj 1. Parameter Gate-emitter voltage Operating junction temperature Calculated according to the iterative formula: T j ( max ) – T C I C ( T C ) = ------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA 3. VCLAMP = 80% (VCES), VGE = 15 V, RG = 10 Ω, TJ = 150 °C Table 3. Symbol Rthj-case Rthj-amb 2/12 Thermal data Parameter Doc ID 15592 Rev 5 STGW35HF60WD 2 Electrical characteristics Electrical characteristics (TJ = 25 °C unless otherwise specified) Table 4. Static Symbol Parameter V(BR)CES Collector-emitter breakdown voltage (VGE = 0) VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC= 20 A VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TJ = 125 °C IGES Gate-emitter leakage current (VCE = 0) VGE = ±20 V Table 5. Test conditions Min. Typ. Max. Unit IC = 1 mA 600 V 2.5 V VGE = 15V, IC = 20 A,TJ= 125 °C 1.65 3.75 5.75 V 250 1 µA mA ± 100 nA VCE(sat) classification Value Symbol VCE(sat) Table 6. Symbol Parameter Group Collector-emitter saturation voltage VGE = 15 V, IC= 20 A Unit Min. Max. A 1.68 1.92 B 1.88 2.17 C 2.13 2.50 V Dynamic Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 - 2400 235 50 - pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 400 V, IC = 20 A, VGE = 15 V, (see Figure 17) - 140 13 52 - nC nC nC Doc ID 15592 Rev 5 3/12 Electrical characteristics Table 7. Symbol STGW35HF60WD Switching on/off (inductive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 400 V, IC = 20 A RG = 10 Ω, VGE = 15 V, (see Figure 16) - 30 15 1650 - ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 400 V, IC = 20 A RG = 10 Ω, VGE = 15 V, TJ = 125 °C (see Figure 16) - 30 15 1600 - ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 400 V, IC = 20 A, RGE = 10 Ω, VGE = 15 V (see Figure 16) - 30 175 40 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 400 V, IC = 20 A, RGE = 10 Ω, VGE =15 V, TJ = 125 °C (see Figure 16) - 50 225 70 - ns ns ns Min. Typ. Max. Unit Table 8. Symbol Switching energy (inductive load) Parameter Test conditions Eon(1) Eoff Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 400 V, IC = 20 A RG = 10 Ω, VGE = 15 V, (see Figure 18) - 290 185 475 Eon(1) Eoff Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 400 V, IC = 20 A RG = 10 Ω, VGE = 15 V, TJ = 125 °C (see Figure 18) - 420 350 770 µJ µJ µJ 530 µJ µJ µJ 1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 18. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25 °C and 125 °C). Eon include diode recovery energy. Table 9. Symbol 4/12 Collector-emitter diode Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 20 A IF = 20 A, TJ = 125 °C - 1.8 1.4 2.25 V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 20 A,VR = 50 V, di/dt = 100 A/µs (see Figure 19) - 50 90 3 trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 20 A,VR = 50 V, TJ =125 °C, di/dt = 100 A/µs (see Figure 19) - 135 375 5.5 Doc ID 15592 Rev 5 - ns nC A - ns nC A STGW35HF60WD Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics IC200 (A) Figure 3. Transfer characteristics IC200 (A) VGE = 15 V 11 V 10 V VCE = 10 V 150 150 9V 100 100 8V 50 50 7V VGE = 6 V 0 0 0 Figure 4. 2 4 6 8 VCE (V) 10 Normalized VCE(sat) vs. IC 0 Figure 5. 3 1.4 9 VGE = 15 V IC = 80 A 1.4 TJ = -50 ºC TJ = 25 ºC 1.2 VGE (V) 12 Normalized VCE(sat) vs. temperature 1.6 VCE(sat) (norm) 1.6 VCE(sat) (norm) 6 IC = 60 A 1.2 TJ = 150 ºC 1 10 A IC = 40 A 30 A 1 0.8 IC = 5 A 0.6 0.8 VGE = 15 V 0.4 0 20 Figure 6. 40 20 A 60 80 IC (A) 0.6 -50 Normalized breakdown voltage vs. Figure 7. temperature 0 50 100 TJ (°C) 150 Normalized gate threshold voltage vs. temperature 1.2 VGE(th) (norm) 1.1 VCES (norm) 1.1 1.05 1 0.9 1 0.8 IC = 1 mA VGE = VCE 0.95 0.7 0.9 IC = 250 µA 0.6 -50 0 50 100 TJ 150 (°C) Doc ID 15592 Rev 5 -50 0 50 100 TJ 150 (°C) 5/12 Electrical characteristics Figure 8. STGW35HF60WD Gate charge vs. gate-emitter voltage VGE 16 (V) Figure 9. Capacitance variations C5000 (pF) VCC = 400 V 12 f = 1 MHz VGE = 0 4000 IC = 20 A 3000 Cies 8 2000 4 1000 Coes Cres 0 0 0 30 60 90 120 QG 150 (nC) Figure 10. Switching losses vs temperature E 450 (µJ) 0 10 20 30 40 50 VCE (V) Figure 11. Switching losses vs. gate resistance E2000 (µJ) 400 350 EOFF 1500 EON EON EOFF 300 1000 250 VCE = 400 V, VGE= 15 V VCE = 400 V, VGE= 15 V 500 IC = 20 A, TJ = 125 °C IC = 20 A, RG =10 Ω 200 150 25 50 75 TJ 125 (°C) 100 Figure 12. Switching losses vs. collector current E1000 (µJ) 0 0 60 120 180 Rg240 (Ω) Figure 13. Turn-off SOA 1000 IC (A) 800 EON 100 600 EOFF 10 400 VGE = 15 V, RG = 10 Ω RG = 10 Ω, TJ = 125 °C 0 0.1 10 6/12 TC = 150 °C 1 VCE = 400 V, VGE = 15 V 200 15 20 25 30 35 IC 40 (A) Doc ID 15592 Rev 5 1 10 100 VCE (V) 1000 STGW35HF60WD Electrical characteristics Figure 14. Diode forward on voltage Figure 15. Thermal impedance !-V ) &! 4* # MAXIMUMVALUES 4* # TYPICALVALUES 4* # MAXIMUMVALUES 6&6 Doc ID 15592 Rev 5 7/12 Test circuits 3 STGW35HF60WD Test circuits Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit AM01504v1 Figure 18. Switching waveform AM01505v1 Figure 19. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF di/dt AM01506v1 8/12 Doc ID 15592 Rev 5 AM01507v1 STGW35HF60WD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15592 Rev 5 9/12 Package mechanical data STGW35HF60WD TO-247 Mechanical data mm. Dim. A Min. 4.85 Typ A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 øR 4.50 3.65 5.50 S 10/12 Max. 5.15 5.50 Doc ID 15592 Rev 5 STGW35HF60WD 5 Revision history Revision history Table 10. Document revision history Date Revision Changes 14-Apr-2009 1 Initial release. 03-Aug-2009 2 Inserted dynamic parameters on Table 6 an Table 7 Document status promoted from preliminary data to datasheet 02-Sep-2009 3 Minor text changes throughout the document Removed watermark 30-Sep-2009 4 Inserted VCE(sat) grouping A, B and C (see Table 5: VCE(sat) classification) 10-May-2010 5 Inserted Section 2.1: Electrical characteristics (curves) Doc ID 15592 Rev 5 11/12 STGW35HF60WD Please Read Carefully: Information in this document is provided solely in connection with ST products. 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